STE30NK90Z STMICROELECTRONICS | Alldatasheet

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Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤ 28A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS , Table 4: Thermal Data Table 5: Avalanche Characteristics Table 6: GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 900 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 28 A ID Drain Current (continuous) at TC = 100°C 18 A IDM (/circle6 ) Drain Current (pulsed) 112 A PTOT Total Dissipation at TC = 25°C 500 W Derating Factor 4.3 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 6.5 KV dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (AC-RMS) from All Four Terminals to External Heatsink 2500 V Tj Tstg Operating Junction Temperature Storage Temperature - 65 to 150 °C Rthj-case Thermal Resistance Junction-case Max 0.23 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 40 °C/W Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 13 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 35 V) 500 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 900 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 µA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 150 µA 3 3.75 4.5 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 14 A 0.21 0.26 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS = 15 V, ID = 14 A 26 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, VGS = 0 12000 852 166 pF pF pF C oss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 720 V 377 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 450 V, ID = 13 A R G =4 . 7Ω VGS = 10 V (see Figure 17) 250 ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 720 V, ID = 26 A, VGS = 10V (see Figure 20) 350 190 490 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 112 A A VSD (1) Forward On Voltage ISD = 28 A, VGS = 0 2V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 26 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see Figure 18) 18.9 36.6 µs µC A t rr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 26 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 18) 1.33 25.2 37.8 µs µC A

Figure 15: Avalanche Energy vs Starting Tj

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H4 0 . 1 5 7 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N4 0 . 1 5 7 O 7.8 8.2 0.307 0.322 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA

Table 10: Revision History Date Revision Description of Changes 12-May-2004 1 First Release. 15-Oct-2004 2 New value inserted in table 3. (VISO ) 20-Jan-2005 3 Final Datasheet

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