STE26NA90 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP FAST POWER MOSFET n TYPICAL RDS(on) = 0.25Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n LOW INTRINSIC CAPACITANCE n GATE CHARGE MINIMIZED n REDUCED VOLTAGE SPREAD

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLY (SMPS) n DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM October 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 900 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 900 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC2 6 A ID Drain Current (continuous) at Tc =1 0 0oC1 6 . 2 A IDM (•) Drain Current (pulsed) 104 A P tot Total Dissipation at Tc =2 5 oC 450 W Derating Factor 3.6 W/ o C Tstg Storage Temperature -55 to 150 o C Tj Max. Operating Junction Temperature 150 o C V ISO Insulation Withstand Voltage (AC-RMS) 2500 V (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STE26NA90 900 V < 0.3 Ω 26 A ISOTOP

Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.27 0.05 oC/W oC/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 13 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =5 0 0µ AV GS = 0 900 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c = 125 oC 250 1000 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 200 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID =1m A 2 . 2 5 3 3 . 7 5 V R DS(on) Static Drain-source On Resistance V GS =1 0V I D = 13 A 0.25 0.3 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 26 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =1 3A 1 5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS =0 1 3 6 0 0 1130 270 17700 1470 350 pF pF pF STE26NA90

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =4 5 0V I D =1 2A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 720 V ID =2 6A V GS = 10 V 470 226 660 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =7 2 0V I D =2 6A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 5) 108 145 152 203 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 104 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =2 6A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 26 A di/dt = 100 A/ µ s V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 1.3 µ s µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STE26NA90

Gate Charge vs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STE26NA90

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STE26NA90

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STE26NA90

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 0.157 O 7.8 8.2 0.307 0.322 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA STE26NA90

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