STE150N10 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE n HIGH CURRENT POWER MODULE n AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) n VERY LARGE SOA - LARGE PEAK POWER CAPABILITY n EASY TO MOUNT n SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS n EXTREMELY LOW R thJUNCTION TO CASE n VERY LOW DRAIN TO CASE CAPACITANCE n VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) n ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) INDUSTRIAL APPLICATIONS: n SMPS & UPS n MOTOR CONTROL n WELDING EQUIPMENT n OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS July 1993 TYPE V DSS R DS(on) ID STE150N10 100 V < 0.009 Ω 150 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-Source Voltage (VGS = 0) 100 V V DG R Drain-Gate Voltage (RGS =2 0k Ω ) 100 V V GS Gate-Source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC 150 A ID Drain Current (continuous) at Tc =1 0 0oC 100 A IDM (•) Drain Current (pulsed) 450 A P tot Total Dissipation at Tc =2 5 oC 410 W Derating Factor 3.3 W/ oC Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC V ISO Insulation Withstand Voltage (AC-RMS) 2500 V (•) Pulse width limited by safe operating area INTERNAL SCHEMATIC DIAGRAM ISOTOP

Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.3 0.05 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1m A V GS = 0 V 100 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating x 0.8 Tc =1 2 5oC 300 1.5 µA mA IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 300 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS (th) Gate Threshold Voltage VDS =V GS ID =1m A 2 4 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID = 90 A 0.009 Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS =1 5V I D =9 0A 8 5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS =0V 1 3 . 5 3600 900 nF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =5 0V I D =7 5A R G =4 . 7Ω V GS =1 0V (see test circuit, figure 1) 140 ns ns (di/dt)on Turn-on Current Slope V DD =8 0V I D = 150 A R G =4 . 7Ω V GS =1 0V (see test circuit, figure 3)

700 A/ µs

Q g Total Gate Charge V DD =8 0V I D =1 5 0A V GS =1 0V 320 nC STE150N10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =8 0V I D = 150 A R G =4 . 7Ω V GS =1 0V (see test circuit, figure 3) 340 400 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 150 450 A A V SD (∗) Forward On Voltage I SD =1 5 0A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 150 A di/dt = 100 A/ µ s V DD =5 0V T j=1 5 0oC (see test circuit, figure 3) 230 1750 ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STE150N10

Static Drain-source On Resistance Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STE150N10

Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-off Drain-source Voltage SlopeTurn-on Current Slope STE150N10

Cross-over Time Source-drain Diode Forward Characteristics Fig. 1:Switching Times Test Circuits For Resistive Load Fig. 2:Gate Charge Test Circuit Fig. 3:Test Circuit For Inductive Load Switching And Diode Recovery Times STE150N10

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 0.157 O 7.8 8.2 0.307 0.322 P 5.5 0.216 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA 0041565 STE150N10

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A STE150N10