STD65NF06 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor STD65NF06
- FEATURES
- WithTO-252(DPAK)packaging
- Highspeed switching
- Standardlevelgate drive
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 42 A IDM DrainCurrent-SinglePulsed 240 A PD TotalDissipation 110 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.36 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 50 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor STD65NF06 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 60 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.25mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=30A 11.5 14 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=60V;VGS=0V;Tc=25℃ Tc=125℃ 10 μA VSDF Diodeforwardvoltage ISD=60A,VGS =0V 1.5 V