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STD64N4F6AG

STMicroelectronics

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all

Manufacturer: STMicroelectronics

Document: 15 Pages / 471Kb

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Product Information

STD64N4F6AG specifications and overview.

Summary

Very low on-resistance 10-Jun-2015

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all

Source title STD64N4F6AG Datasheet(PDF) - STMicroelectronics

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