STD60NF06

STD60NF06 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 60V - 0.014Ω - 60A DPAK STripFET™ II POWER MOSFET (1) ISD ≤ 60A, di/dt≤200 A/µs, VDD ≤ 24V, Tj≤TjMAX ■ TYPICAL R DS (on) = 0.014Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet series realized with STMicro- electronics unique STripFET process has specifical- ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STD60NF06 60 V < 0.016 Ω 60A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 42 A IDM (/c108 ) Drain Current (pulsed) 240 A PTOT Total Dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature DPAK (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 30 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 30 V) 350 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 µA 24 V R DS(on) Static Drain-source On Resistance VGS = 10 V, ID = 30 A 0.014 0.016 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS =15 V , ID = 30 A 20 S C iss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1810 pF C oss Output Capacitance 360 pF C rss Reverse Transfer Capacitance 125 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 30 V, ID = 30 A R G = 4.7Ω , VGS = 10 V (see test circuit, Figure 3) 16 ns tr Rise Time 108 ns Q g Total Gate Charge V DD = 48 V, ID =60 A VGS = 10 V 49 66 nC Q gs Gate-Source Charge 18 nC Q gd Gate-Drain Charge 14 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30 V, ID = 30 A, R G =4 . 7Ω, VGS = 10 V (see test circuit, Figure 3) ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =48 V, ID = 60 A R G =4 . 7Ω, VGS = 10 V (see test circuit, Figure 3) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 60 A ISDM (2) Source-drain Current (pulsed) 240 A VSD (1) Forward On Voltage ISD = 60 A, VGS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) 182 ns nC A

Safe Operating Area for DPAK Static Drain-source On Resistance Thermal Impedence for DPAK Transconductance Transfer CharacteristicsOutput Characteristics

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Gate Charge vs Gate-source Voltage Capacitance Variations Normalized On Resistance vs Temperature

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimetersAll dimensions are in millimeters

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