STD5NB20 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 200V - 0.70Ω - 5A DPAK PowerMESH  MOSFET PRELIMINARY DATA ■ TYPICAL RDS(on) =0.7 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■ HIGH EFFICIENCY DC-DC CONVERTERS ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM December 1998 DPAK TO-252 (Suffix "T4") ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 200 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 200 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC5 A ID Drain Current (continuous) at Tc = 100 oC3 A IDM (•) Drain Current (pulsed) 20 A P tot Total Dissipation at Tc = 25 oC4 5 W Derating Factor 0.36 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 5.5 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area (1) ISD ≤5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX TYPE V DSS R DS(on) ID STD5NB20 200 V < 0.8 Ω 5 A

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.78 100 1.5 275 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V) 40 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µ A VGS = 0 200 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating Tc = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold VoltageV DS = VGS ID = 250 µ A 345V R DS(on) Static Drain-source On Resistance V GS = 10V ID =2.5 A 0.7 0.8 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID =2.5 A 1 2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 260 10.5 350 100 pF pF pF STD5NB20

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 100 V ID =3. 5 A R G = 4.7 Ω VGS = 10 V 13.5 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 160 V ID =7 A VGS = 10 V 12 8.5 16 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 160 V ID = 7 A R G = 4.7 Ω VGS = 10 V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD = 5 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A di/dt = 100 A/µ s V DD = 50 V Tj = 150 oC 145 650 200 878 12.12 ns nC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STD5NB20

DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 0.031 L4 0.6 1 0.023 0.039 DL2 1 3 B E G A C H A1 DETAIL "A" DETAIL "A" TO-252 (DPAK) MECHANICAL DATA 0068772-B STD5NB20

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STD5NB20