STD5N60DM2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 DPAK (TO-252) type A package information
- 4.2 DPAK (TO-252) packing information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STD5N60DM2 600 V 1.55 Ω 3.5 A 45 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STD5N60DM2 5N60DM2 DPAK Tape and reel
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID Drain current (continuous) at Tcase = 25 °C 3.5 A Drain current (continuous) at Tcase = 100 °C 2 IDM(1) Drain current (pulsed) 14 A PTOT Total dissipation at Tcase = 25 °C 45 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 40 Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 3.5 A, di/dt=400 A/μs; VDS peak < V(BR)DSS, VDD = 480 V. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.78 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 50 Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 1.7 A EAS(2) Single pulse avalanche energy 132 mJ Notes: (1) Pulse width limited by Tjmax. (2) Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V µA VGS = 0 V, VDS = 600 V, Tcase = 125 °C (1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1.75 A 1.38 1.55 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 375 - pF Coss Output capacitance - 13 - Crss Reverse transfer capacitance - 0.3 - Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 21 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.5 - Ω Qg Total gate charge VDD = 480 V, ID = 3.5 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 8.6 - nC Qgs Gate-source charge - 2 - Qgd Gate-drain charge - 5.2 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 1.75 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 7.2 - ns tr Rise time - 4.1 - td(off) Turn-off delay time - 17 - tf Fall time - 19.8 -
Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 3.5 A ISDM(1) Source-drain current (pulsed) 14 A VSD(2) Forward on voltage VGS = 0 V, ISD = 3.5 A - 1.6 V trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 58 70 ns Qrr Reverse recovery charge - 109 nC IRRM Reverse recovery current - 4 A trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 109 ns Qrr Reverse recovery charge - 309 nC IRRM Reverse recovery current - 5 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance K CG34360 c -1 tp (s)10
3 Test circuits
Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 DPAK (TO-252) type A package information
Figure 20: DPAK (TO-252) type A package outline 0068772_A_21
Table 9: DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0°
Figure 21: DPAK (TO-252) recommended footprint (dimensions are in mm)
4.2 DPAK (TO-252) packing information
Figure 22: DPAK (TO-252) tape outline
Figure 23: DPAK (TO-252) reel outline Table 10: DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3
5 Revision history
Table 11: Document revision history Date Revision Changes 05-Jul-2016 1 First release.