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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Low RDS(on)
  • High Current Capability
  • Low Gate Charge
  • STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant

Applications

  • Electronic Brake Systems
  • Electronic Power Steering
  • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current − R/C0113JC Steady State TC = 25°C ID 70 A TC = 125°C 40 Power Dissipation − R/C0113JC Steady State TC = 25°C PD 100 W Continuous Drain Current − R/C0113JA (Note 1) Steady State TA = 25°C ID 12.2 A TA = 125°C 7.0 Power Dissipation − R/C0113JA (Note 1) Steady State TA = 25°C PD 3.0 W Pulsed Drain Current tp = 10 /C0109s IDM 150 A Operating Junction and Storage Temperature TJ, TSTG −55 to 175 Source Current (Body Diode) Pulsed IS 63.5 A Single Pulse Drain−to Source Avalanche Energy − (V DD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 /C0087) EAS 450 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit Junction−to−Case (Drain) RθJC 1.5 °C/W Junction−to−Ambient (Note 1) RθJA 49 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). www.onsemi.com MARKING DIAGRAM V(BR)DSS RDS(ON) TYP ID MAX (Note 1) 40 V 8.7 m Ω @ 10 V 70 A DPAK CASE 369C STYLE 2 N−Channel D S G 1 2 AYWW 06NG Device Package Shipping †

ORDERING INFORMATION

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification s Brochure, BRD8011/D. A = Assembly Location* Y = Year WW = Work Week 5406N = Specific Device Code G = Pb−Free Device STD5406NT4G* DPAK (Pb−Free) 2500 / Tape & Reel NTD5406NT4G DPAK (Pb−Free) 2500 / Tape & Reel * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. STD5406NT4G−VF01 DPAK (Pb−Free) 2500 / Tape & Reel

NTD5406N, STD5406N www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 /C0109A 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 42 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 /C0109A TJ = 100°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±30 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 /C0109A 1.5 3.5 V Gate Threshold Temperature Coefficient VGS(TH)/TJ −7.0 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 30 A 8.7 10 m/C0087 VGS = 5.0 V, ID = 10 A 13.2 17 Forward Transconductance gFS VGS = 10 V, ID = 10 A 19 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = 32 V 1375 2500 pF Output Capacitance COSS 370 700 Reverse Transfer Capacitance CRSS 160 300 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V, ID = 30 A 45 nC Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS 5.4 Gate−to−Drain Charge QGD 20 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time td(ON) VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 /C0087 7.2 ns Rise Time tr 57 Turn−Off Delay Time td(OFF) 30 Fall Time tf 67 SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time td(ON) VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5 /C0087 15 ns Rise Time tr 147 Turn−Off Delay Time td(OFF) 20 Fall Time tf 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.82 1.1 V TJ = 125°C 0.67 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A//C0109s, IS = 10 A 46 ns Charge Time ta 24 Discharge Time tb 22 Reverse Recovery Charge QRR 65 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 /C0109s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.

Figure 12. Thermal Response

NTD5406N, STD5406N www.onsemi.com PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN b D E M0.005 (0.13) C A c C Z DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46 L 0.055 0.070 1.40 1.78 L3 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY . 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. 12 3 H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC HDETAIL A SEATING PLANE A B C L H L2 GAUGE PLANE DETAIL A ROTATED 90 CW/C0053 e BOTTOM VIEW Z BOTTOM VIEW SIDE VIEW TOP VIEW ALTERNATE CONSTRUCTIONS NOTE 7 Z ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NTD5406N/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative