STD52P3LLH6 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 16
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 4.1 DPAK (TO-252) mechanical data
- 5 Packaging mechanical data
- 5.1 DPAK (TO-252) tape and reel mechanical data
- 6 Revision history
Features
Order codes VDSS RDS(on) max ID PTOT STD52P3LLH6 30 V 0.012 Ω 52 A 70 W Very low on-resistance Very low gate charge High avalanche Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order codes Marking Package Packaging STD52P3LLH6 52P3LLH6 DPAK Tape and reel For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 52 A ID Drain current (continuous) at TC = 100 °C 37.5 A IDM (1) Drain current (pulsed) 208 A PTOT Total dissipation at TC = 25 °C 70 W Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 °C/W For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 30 V IDSS Zero gate voltage drain current VGS = 0, VDS = 30 V VGS = 0, VDS = 30 V, Tc = 125 °C 1 µA 10 µA IGSS Gate body leakage current VGS = ± 20 V, VDS = 0 ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 26 A 0.01 0.012 Ω VGS = 4.5 V, ID = 26 A 0.014 0.017 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 3350 - pF Coss Output capacitance - 414 - pF Crss Reverse transfer capacitance - 287 - pF Qg Total gate charge VDD = 15 V, ID = 52 A VGS = 4.5 V (see Figure 14: "Gate charge test circuit" ) - 33 - nC Qgs Gate-source charge - 14 - nC Qgd Gate-drain charge - 11 - nC Rg Gate input resistance ID = 0 Gate bias = 0 Test signal level = 20 mV f = 1MHz - 1.5 Ω For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
Table 6: Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 24 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V ( see Figure 13: "Switching times test circuit for resistive load") - 12.8 - ns tr Rise time - 112 - ns td(off) Turn-off delay time - 61 - ns tf Fall time - 45 - ns Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = 52 A, VGS = 0 - 1.1 V trr Reverse recovery time ISD = 52 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 15: "Source-drain diode forward characteristics") - 25.2 ns Qrr Reverse recovery charge - 17.4 nC IRRM Reverse recovery current - 1.4 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance δ 0.05 0.01 0.1 0.2 0.02 GIPG280820141409MT ID 150 0 2 VDS(V)4 (A) 7VVGS = 9,10V 100 200 GIPG290820141127MTVGS 0 40 Qg(nC) (V) VDD=15V IG=52A12 GIPG290820141143MTRDS(on) 9.00 8.50 8.00 0 2 ID(A) (mΩ) 9.50 VGS=10V 10.00 10.50 11.00 4 6 8 10 11.50
3 Test circuits
Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Source-drain diode forward characteristics
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in differ ent grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 DPAK (TO-252) mechanical data
Figure 16: DPAK (TO-252) type A drawings
Table 8: DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 5.10 E 6.40 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 0.80 L4 0.60 1.00 R 0.20 V2 0°
Figure 17: DPAK (TO-252) type A footprint All dimensions are in mm
STD52P3LLH6 Packaging mechanical data
5 Packaging mechanical data
5.1 DPAK (TO-252) tape and reel mechanical data
Figure 18: Tape for DPAK (TO-252)
Packaging mechanical data STD52P3LLH6 Figure 19: Reel for DPAK (TO-252) Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3
6 Revision history
Table 10: Document revision history Date Revision Changes 02-Jun-2014 1 First release 24-Sep-2014 2 Updated the title, the features and the description in cover page. Updated Table 2: "Absolute maximum ratings", Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)" . Minor text changes.