STD5100C SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 100 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=95°C, rectangularwaveform 2.5(PerLeg) A5(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 100 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop (PerLeg)* VF1 @1A,Pulse,TJ =25C @2.5A,Pulse,TJ =25C 0.47 0.60 0.75 V VF2 @1A,Pulse,TJ =125C @2.5A,Pulse,TJ =125C 0.41 0.52 0.65 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR TJ =25C 3.6 100 uA IR2 @VR =ratedVR TJ =125C 1.35 15 mA JunctionCapacitance(PerLeg) CT @VR =5V,TC =25C fSIG =1MHz 167 - pF  150C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection DPAK

Data Sheet N1470, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STD5100C Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC DCoperation 2 C/W ApproximateWeight wt - 0.39 g CaseStyle DPAK Thermal-Mechanical Specifications: Ratings and Characteristics Curves Fig.2-Typical Reverse Characteristics Fig.3-Typical Instantaneous Forward Voltage Characteristics Fig.1-Typical Junction Capacitance TJ=125℃ TJ=25℃ TJ=25℃ TJ=25℃ TJ=125℃

Data Sheet N1470, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STD5100C Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Mechanical Dimensions DPAK SYMBOL Millimeters Inches Min. Max. Min. Max. A 2.20 2.40 0.087 0.094 A1 0.00 0.127 0.000 0.005 b 0.66 0.86 0.026 0.034 c 0.46 0.60 0.018 0.024 D 6.50 6.70 0.256 0.264 D1 5.13 5.46 0.202 0.215 D2 4.83REF. 0.190REF. E 6.00 6.20 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.70 10.40 0.381 0.409 L1 2.90REF. 0.144REF. L2 1.40 1.70 0.055 0.067 L3 1.60REF. 0.063REF. L4 0.60 1.00 0.024 0.039 Φ 1.10 1.30 0.043 0.051 Θ 0° 8° 0° 8° h 0.00 0.30 0.000 0.012 V 5.35REF. 0.211REF. Ordering Information Marking Diagram Device Package Shipping STD5100C DPAK 2500pcs/reel Carrier Tape Specification DPAK SYMBOL Millimeters Min. Max. A 6.80 7.00 B 10.40 10.60 C 2.60 2.80 d Φ1.45 Φ1.65 E 1.65 1.85 F 7.40 7.60 P0 3.90 4.10 P 7.90 8.10 P1 1.90 2.10 W 15.90 16.30 WhereXXXXX is YYWWL ST =DeviceType D =Packagetype 5 =ForwardCurrent (5A) 100 =Reverse Voltage(100V) C =Configuration SSG =SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N1470, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STD5100C DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..