STC4350 DGNJDZ | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
mplementary pair with STA3350 ST C4350 STC4350 NPN Silico n Transistor SOT -89 PIN Con nection
Applications
- P ower amplifier application
- High current switching application Featur es • Low saturation voltage: VCE(sat)=0.15V T yp. @ IC=1A, IB=50mA • Larg e collector current capacity: IC=3A
- Small an d compact SMD type package
- “Green” device and RoHS compliant device
- Available in full lead (Pb)-free device
Ordering Information
T ype NO. Marking Package Code SOT-89 A b s o l u t e M a x i m u m R a t i n g s [T a=25℃] Characteristic Symbol Rating Unit C ollector-base voltage VCBO 60 V C ollector-emitter voltage VCEO 50 V Emi tter-base voltage VEBO 6 V Collector current IC 3 A(DC) ICP*
6 A(Pulse)
PC 0.5 W PC ** 1 W Junc tion temperature TJ 150 °C Stor age temperature range Tst g -55~150 * : Single pulse, tp= 300 ㎲ : Device mounted on ceramic substrate (250mm2ⅹ0.8t) Characteristic Symb ol Typ. Max Unit Therm al resistance Junction-ambient Rth(J- a) - 250 ℃/W - 125 ℃/W SOT-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com1/6 All data s heet.com
- 400 Electrical Characteristics [T a=25℃] Characteristic Symbol Test Condition Min. Typ. Max. Unit Coll ector-emitter breakdown voltage BV CEO I C=10mA , IB=0 50 - - V Collector cut -off current ICBO V CB=60V , IE=0 - - 0.1 μA Emi tter cut-off current IEB O V EB=6V , IC=0 - - 0.1 μA DC current gai n hFE VCE=2V , IC=0 .1A* hFE VCE=2V , IC=2 A* 40 - - Coll ector-emitter saturation voltage V CE( sat) IC=2A, IB=0. 1A* - - 0.35 V Base-emi tter saturation voltage V BE (sat) IC=2A, IB=0. 1A* - - 1.2 V T ransition frequency fT V CE=10V , IC=0. 05A - 210 - MHz Coll ector output capacitance Cob VCB=10V , IE=0, f=1MHz - 18 - pF S witching Time Turn-on Time t on - 100 nS Stor age Time t stg - 300 - Fa ll Time tf - 50 - Pul se test : tP≤300µ s, Duty cycle≤2% STC4350 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com2/6 All data s heet.com
Electrical Characteristic Curves Fi g. 1 PC - Ta Fi g. 2 IC - VBE Fi g. 3 IC - VCE Fi g. 4 hFE - IC Fi g. 5 VCE(sat) - IC Fi g. 6 VBE(sat) - IC Dongguan Nanjing Electronics Ltd. www.dgnjdz.com3/6 All data s heet.com
Electrical Characteristic Curves Fi g. 7 COb - VCB Fig. 8 Safe Operating Area STC4350 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com4/6 All data s heet.com
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0. 020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout .500 .400 .8000 .900 .950 .300 .700 .600 .200 45° Dongguan Nanjing Electronics Ltd. www.dgnjdz.com5/6 All data s heet.com
Dongguan Nanjing Electronics Ltd. www.dgnjdz.com6/6 All data s heet.com