STB60N06-14 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA ■ TYPICAL RDS(on) = 0.012 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") ■ SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 kΩ )6 0 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC6 0 A ID Drain Current (continuous) at Tc = 100 oC5 0 A IDM (•) Drain Current (pulsed) 240 A P tot Total Dissipation at Tc = 25 oC 150 W Derating Factor 1 W/ oC Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STB60N06-14 60 V < 0.014 Ω 60 A March 1996 1 2 3 I2PAK TO-262 D2PAK TO-263

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 60 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 25 V) 600 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 150 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 50 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating x 0.8 Tc = 125 oC 250 1000 µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 20 V 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS = VGS ID = 250 µ A 234V R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 30 A V GS = 10 V ID = 30 A Tc = 100oC 0.012 0.014 0.028 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V 60 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 30 A 20 30 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 3900 950 250 4800 1200 320 pF pF pF STB60N06-14

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 25 V ID = 30 A R G = 4.7 Ω VGS = 10 V 180 250 ns ns (di/dt)on Turn-on Current Slope V DD = 40 V ID = 60 A R G = 47 Ω VGS = 10 V

210 A/ µ s

V DD = 40 V ID = 60 A VGS = 10 V 130 170 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 40 V ID = 60 A R G = 4.7 Ω VGS = 10 V 135 180 190 250 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 240 A A V SD (∗) Forward On Voltage I SD = 60 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A di/dt = 100 A/µs V DD = 30 V Tj = 150 oC 150 0.56 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STB60N06-14

DIM. mm inch A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 L B D E A CA1 e TO-262 (I2PAK) MECHANICAL DATA STB60N06-14

DIM. mm inch A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.37 0.050 0.054 L3 1.4 1.75 0.055 0.068 L B G E A D C TO-263 (D2PAK) MECHANICAL DATA STB60N06-14

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . STB60N06-14