STB60H100C SMC | Alldatasheet
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Technical content
T e c h n i c a l D a t a Green Products Data Sheet N1834, Rev. -
- China - Germany - Korea - Singapore - United States •
- http://www.smc-diodes.com - sales@ smc-diodes.com • STB60H100C STB60H100C SCHOTTKY RECTIFIER Applications:
- Switching power supply
- Converters
- Free-Wheeling diodes
- Reverse battery protection
- Center tap configuration Features:
- 175°C TJ operation
- Center tap configuration
- Ultralow forward voltage drop
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- High frequency operation
- Trench MOS Schottky technology
- This is a Pb − Free Device
- All SMC parts are traceable to the wafer lot Mechanical Dimensions: In mm D 2PAK Symbol Dimensions in millimeters Min. Typical Max. A 4.55 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 D 8.55 8.70 8.85 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.18 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.70 L1 1.17 1.27 1.40 L2 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4°
T e c h n i c a l D a t a Green Products Data Sheet N1834, Rev. -
- China - Germany - Korea - Singapore - United States •
- http://www.smc-diodes.com - sales@ smc-diodes.com • STB60H100C Marking Diagram: Where XXXXX is YYWWL S T = D e v i c e T y p e B = Package type 60 = Forward Current (60A) H = T j 1 7 5 °C 100 = Reverse Voltage (100V) C = Configuration SSG = SSG YY = Year W W = W e e k L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping STB60H100C D²PAK (Pb-Free) 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 100 V Average Forward Current I F(AV) 50% duty cycle @TC =105°C, rectangular wave form 60 A Peak One Cycle Non-Repetitive Surge Current(per leg) IFSM 8.3 ms, half Sine pulse 300 A
T e c h n i c a l D a t a Green Products Data Sheet N1834, Rev. -
- China - Germany - Korea - Singapore - United States •
- http://www.smc-diodes.com - sales@ smc-diodes.com • STB60H100C Electrical Characteristics: * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature T J - -55 to +175 °C Storage Temperature T stg - -55 to +175 °C Typical Thermal Resistance Junction to Case(per leg) RθJC DC operation 2.0 °C/W Approximate Weight wt - 1.85 g Case Style D 2PAK Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop (per leg)* V F1 @ 15A, Pulse, TJ = 25 °C @ 30A, Pulse, TJ = 25 °C 0.72 0.87 0.75 0.90 V VF2 @ 15A, Pulse, TJ = 125 °C @ 30A, Pulse, TJ = 125 °C 0.62 0.79 0.70 0.85 V Reverse Current at DC Condition (per leg)* IR1 @VR = rated VR TJ = 25°C 0.006 1 mA IR2 @VR = rated VR TJ = 125°C 2 15 mA
T e c h n i c a l D a t a Green Products Data Sheet N1834, Rev. -
- China - Germany - Korea - Singapore - United States •
- http://www.smc-diodes.com - sales@ smc-diodes.com • STB60H100C
T e c h n i c a l D a t a Green Products Data Sheet N1834, Rev. -
- China - Germany - Korea - Singapore - United States •
- http://www.smc-diodes.com - sales@ smc-diodes.com • STB60H100C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..