STB36NM60N STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 18

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • Designed for automotive applications and AEC-Q101 qualified
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

Applications

  • Automotive switching applications

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. TO-247 TAB D2PAK !-V 4!" Order codes VDSS @TJ max. RDS(on) max. ID STB36NM60ND 650 V 0.110 Ω 29 A STW36NM60ND Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area
  2. I SD ≤ 29 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS,VDSPeak < V(BR)DSS

Table 3. Thermal data

  1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On/off states Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D 2PAK Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs

0.102 VGS=10V

Figure 14. Normalized VDS vs temperature Figure 15. Source-drain diode forward vs

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 8. D²PAK (TO-263) mechanical data

Table 9. TO-247 mechanical data

Figure 24. TO-247 drawing

5 Packaging mechanical data

Table 10. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 11. Document revision history 24-Oct-2012 1 Initial release. 01-Jul-2013 2 – Updated Figure 1: Internal schematic diagram. – Added Section 2.1: Electrical characteristics (curves).