STB34N50DM2AG STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 D²PAK (TO-263) type A package information
- 4.2 D²PAK packing information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STB34N50DM2AG 500 V 0.12 Ω 26 A 190 W Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB34N50DM2AG 34N50DM2 D²PAK Tape and reel TAB D2PAK
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at Tcase = 25 °C 26 A Drain current (continuous) at Tcase = 100 °C 16 IDM(1) Drain current (pulsed) 104 A PTOT Total dissipation at Tcase = 25 °C 190 W dv/dt(2) Peak diode recovery voltage slope 50 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 26 A, di/dt=800 A/μs; VDS peak < V(BR)DSS,VDD = 80% V(BR)DSS. (3) VDS ≤ 400 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.65 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 30 Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 5 A EAS(2) Single pulse avalanche energy 700 mJ Notes: (1)pulse width limited by Tjmax. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 500 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 500 V µA VGS = 0 V, VDS = 500 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 12.5 A 0.10 0.12 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 1850 - pF Coss Output capacitance - 100 - Crss Reverse transfer capacitance - 2.7 - Coss eq.(1) Equivalent output capacitance VDS = 0 to 400 V, VGS = 0 V - 160 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.5 - Ω Qg Total gate charge VDD = 480 V, ID = 25 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 44 - nC Qgs Gate-source charge - 10.5 - Qgd Gate-drain charge - 19 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 250 V, ID = 12.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 19.5 - ns tr Rise time - 11.5 - td(off) Turn-off delay time - 65.5 - tf Fall time - 8.1 -
Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 26 A ISDM(1) Source-drain current (pulsed) 104 A VSD(2) Forward on voltage VGS = 0 V, ISD = 26 A - 1.6 V trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 110 ns Qrr Reverse recovery charge - 0.48 µC IRRM Reverse recovery current - 8.8 A trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 190 ns Qrr Reverse recovery charge - 1.52 µC IRRM Reverse recovery current - 16 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02
Test circuits STB34N50DM2AG
3 Test circuits
Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 D²PAK (TO-263) type A package information
Figure 20: D²PAK (TO-263) type A package outline 0079457_A_rev22
Table 10: D²PAK (TO-263) type A package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0°
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
4.2 D²PAK packing information
Figure 22: Tape
Figure 23: Reel Table 11: D²PAK tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3
5 Revision history
Table 12: Document revision history Date Revision Changes 19-Aug-2015 1 Initial version