STB30N10 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 100 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC3 0 A ID Drain Current (continuous) at Tc = 100 oC2 1 A IDM (•) Drain Current (pulsed) 120 A P tot Total Dissipation at Tc = 25 oC 150 W Derating Factor 1 W/ oC Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STB30N10 100 V < 0.07 Ω 30 A September 1998 D2PAK TO-263

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 62.5 0.5 oC/W oC/W oC/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 30 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 25 V) 240 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µ A VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating x 0.8 Tc = 100 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 20 V ±100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µ A 234V R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 15 A 0.06 0.07 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V 30 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 15 A 10 20 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 2600 350 3600 500 110 pF pF pF STB30N10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 50 V ID = 15 A R G = 47 Ω VGS = 10 V ns ns (di/dt)on Turn-on Current Slope V DD = 80 V ID = 30 A R G = 47 Ω VGS = 10 V

480 A/ µ s

ID = 30 A VGS = 10 V VDD = 80 V 80 120 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 80 V ID = 30 A R G = 47 Ω VGS = 10 V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 120 A A V SD (∗) Forward On Voltage I SD = 30 A VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 30 A di/dt = 100 A/µs V DD = 30 V Tj = 150 oC 175 1.05 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STB30N10

DIM. mm inch A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 L B G E A D C P011P6/C TO-263 (D2PAK) MECHANICAL DATA STB30N10

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