STB3020L

STB3020L STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 30V - 0.019Ω - 40A - D2PAK STripFET POWER MOSFET n TYPICAL RDS(on) = 0.019Ω n LOW GATE CHARGE A 100 oC n APPLICATION ORIENTED CHARACTERIZATION n FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE n ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size ” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-AC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM March 1999 D 2PAK TO-263 (suffix ”T4”) TYPE V DSS R DS(on) ID STB3020L 30 V < 0.022 Ω 40 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 3 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω )3 0 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC4 0 A ID Drain Current (continuous) at Tc = 100 oC2 8 A IDM (•) Drain Current (pulsed) 160 A P tot Total Dissipation at Tc =2 5 oC8 0 W Derating Factor 0.53 W/ oC Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.875 62.5 0.5 300 oC/W oC/W oC/W oC ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 3 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =1 2 5oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A1 2 . 5 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =2 0A V GS =5 V I D =2 0A 0.019 0.033 0.022 0.038 Ω Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 40 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =20 A 5 20 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1270 350 115 pF pF pF STB3020L

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =1 5V I D =1 9A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig. 3) 220 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =2 4V I D =3 8A V GS =5V 2 1 29 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =1 5V I D =1 9A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig. 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =2 4V I D =3 8A R G =4 . 7 Ω V GS =4 . 5V (Inductive Load, see fig. 5) 125 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 160 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =4 0A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 38 A di/dt = 100 A/ µ s V DD =1 5V T j =1 5 0oC (see test circuit, fig. 5) 2.5 ns nC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB3020L

Gate Charge vs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STB3020L

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STB3020L

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STB3020L

DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 L2 L3L B2 B GE A D C DETAIL”A” DETAIL ”A” P011P6/E TO-263 (D2PAK) MECHANICAL DATA STB3020L

Information furnished is believed to be accurate and reliable. However, STMicroelect ronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STB3020L