ST30200C SMCDIODE | Alldatasheet
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Data Sheet N1438, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST30200C STB30200C ST30200C/STB30200C SCHOTTKY RECTIFIER Applications Features ST30200C STB30200C TO-220AB D2PAK Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 200 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 200 A 150 C TJ operation Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Trench MOS Schottky technology This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection
Data Sheet N1438, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST30200C STB30200C * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC DCoperation 2.2 C/W Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @5A,Pulse,TJ =25C @10A,Pulse,TJ =25C @15A,Pulse,TJ =25C 0.70 0.78 0.81 1.10 V VF2 @5A,Pulse,TJ =125C @15A,Pulse,TJ =125C @15A,Pulse,TJ =125C 0.56 0.61 0.68 0.72 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25℃ 0.0005 0.16 mA IR2 @VR =ratedVR, TJ =125℃ 1 12 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz 300 - pF Thermal-Mechanical Specifications: Tube Specification Tube Specification(TO-220AB) Device Package Weight Shipping ST30200C TO-220AB 2.0 50pcs/tube STB30200C D²PAK 1.85 800pcs/reel
Data Sheet N1438, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST30200C STB30200C Ratings and Characteristics Curves
Data Sheet N1438, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST30200C STB30200C Marking Diagram Carrier Tape Specification D2PAK SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 WhereXXXXX isYYWWL ST =Device Type B =Packagetype 30 =ForwardCurrent (30A) 200 =ReverseVoltage(200V) C = Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions:Moldingresin Epoxy resinUL:94V-0
Data Sheet N1438, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST30200C STB30200C Mechanical Dimensions TO-220AB Symbol Dimensions in millimeters Min Typical Max A 4.42 4.57 4.72 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.94 15.24 15.54 D1 8.85 9.00 9.15 E 10.01 10.16 10.31 e 2.54 e1 4.98 5.06 5.18 H1 6.04 6.24 6.44 L 12.7 13.56 13.80 L1 3.56 3.5 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 7° Θ2 3° Θ3 4° Symbol Dimensions in millimeters Min. Typical Max. A 4.47 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 c1 1.17 1.27 1.37 D 8.50 8.70 8.90 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.31 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.74 L1 1.12 1.27 1.42 L2 1.30 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4° Mechanical Dimensions D2PAK
Data Sheet N1438, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST30200C STB30200C DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..