ST30150C SMCDIODE | Alldatasheet

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Data Sheet N1401, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30150C STB30150C ST30150C/STB30150C SCHOTTKY RECTIFIER Applications Features ST30150C STB30150C TO-220AB D2PAK Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 150 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 200 A  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection

Data Sheet N1401, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30150C STB30150C * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC DCoperation 2.2 C/W Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @5A,Pulse,TJ =25C @7.5A, Pulse,TJ =25C @15A,Pulse,TJ =25C 0.66 0.79 1.16 1.36 V VF2 @5A,Pulse,TJ =125C @7.5A, Pulse,TJ =125C @15A,Pulse,TJ =125C 0.56 0.62 0.74 0.79 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25℃ 0.006 0.2 mA IR2 @VR =ratedVR, TJ =125℃ 2.6 20 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz 485 - pF Thermal-Mechanical Specifications: Tube Specification Tube Specification(TO-220AB) Device Package Weight Shipping ST30150C TO-220AB 2.0 50pcs/tube STB30150C D²PAK 1.85 800pcs/reel

Data Sheet N1401, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30150C STB30150C Ratings and Characteristics Curves

Data Sheet N1401, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30150C STB30150C Marking Diagram Carrier Tape Specification D2PAK SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 WhereXXXXX isYYWWL ST =Device Type B =Packagetype 30 =ForwardCurrent (30A) 150 =ReverseVoltage(150V) C = Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0

Data Sheet N1401, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30150C STB30150C Mechanical Dimensions TO-220AB Symbol Dimensions in millimeters Min Typical Max A 4.42 4.57 4.72 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.94 15.24 15.54 D1 8.85 9.00 9.15 E 10.01 10.16 10.31 e 2.54 e1 4.98 5.06 5.18 H1 6.04 6.24 6.44 L 12.7 13.56 13.80 L1 3.56 3.5 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 7° Θ2 3° Θ3 4° Mechanical Dimensions D2PAK Symbol Dimensions in millimeters Min. Typical Max. A 4.47 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 c1 1.17 1.27 1.37 D 8.50 8.70 8.90 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.31 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.74 L1 1.12 1.27 1.42 L2 1.30 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4°

Data Sheet N1401, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30150C STB30150C DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..