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AD822 AD | Alldatasheet

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8-Pin Plastic DIP, Cerdip and SOIC OUT1 –IN1 +IN1 OUT2 –IN2 +IN2 AD822 REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a Single Supply, Rail-to-Rail Low Power FET-Input Op Amp AD822 Tel: 617/329-4700 Fax: 617/326-8703

FEATURES

TRUE SINGLE SUPPLY OPERATION Output Swings Rail to Rail Input Voltage Range Extends Below Ground Single Supply Capability from +3 V to +36 V Dual Supply Capability from 61.5 V to 618 V HIGH LOAD DRIVE Capacitive Load Drive of 350 pF, G = 1 Minimum Output Current of 15 mA EXCELLENT AC PERFORMANCE FOR LOW POWER 800 mA Max Quiescent Current per Amplifier Unity Gain Bandwidth: 1.8 MHz Slew Rate of 3.0 V/ ms GOOD DC PERFORMANCE 800 mV Max Input Offset Voltage 2 mV/8C Typ Offset Voltage Drift 25 pA Max Input Bias Current LOW NOISE 13 nV/ √ Hz @ 10 kHz NO PHASE INVERSION

APPLICATIONS

Battery Powered Precision Instrumentation Photodiode Preamps Active Filters 12- to 14-Bit Data Acquisition Systems Medical Instrumentation Low Power References and Regulators PRODUCT DESCRIPTION The AD822 is a dual precision, low power FET input op amp that can operate from a single supply of +3.0 V to 36 V, or dual supplies of ± 1.5 V to ± 18 V. It has true single supply capability with an input voltage range extending below the negative rail, allowing the AD822 to accommodate input signals below ground in the single supply mode. Output voltage swing extends to within 10 mV of each rail providing the maximum output dynamic range. Offset voltage of 800 µV max, offset voltage drift of 2 µV/°C, input bias currents below 25 pA and low input voltage noise provide dc precision with source impedances up to a Gigaohm.

1.8 MHz unity gain bandwidth, –93 dB THD at 10 kHz and

3 V/µs slew rate are provided with a low supply current of

800 µA per amplifier. The AD822 drives up to 350 pF of direct capacitive load as a follower, and provides a minimum output current of 15 mA. This allows the amplifier to handle a wide range of load conditions. This combination of ac and dc performance, plus the outstanding load drive capability, results in an exceptionally versatile amplifier for the single supply user. The AD822 is available in four performance grades. The A and B grades are rated over the industrial temperature range of –40°C to +85°C. There is also a 3 volt grade—the AD822A-3V, rated over the industrial temperature range. The mil grade is rated over the military temperature range of –55 °C to +125°C and is available processed on standard military drawing. The AD822 is offered in three varieties of 8-pin package: plastic DIP, hermetic cerdip and surface mount (SOIC) as well as die form. 100 1V 20µ s VOUT (GND) Gain of +2 Amplifier; V S = +5, 0, VIN = 2.5 V Sine Centered at 1.25 Volts, RL = 100 kΩ Input Voltage Noise vs. Frequency 100 10 100 10k 1k INPUT VOLTAGE NOISE – nV/ ÖHz FREQUENCY – Hz

REV. A–2– AD822–SPECIFICATIONS(VS = 0, 5 volts @ TA = +258C, VCM = 0 V, VOUT = 0.2 V unless otherwise noted) AD822A AD822B AD822S 1 Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Units DC PERFORMANCE Offset Drift 2 2 2 µV/°C Input Bias Current V CM = 0 V to 4 V 2 25 2 10 2 25 pA at TMAX 0.5 5 0.5 2.5 0.5 nA Input Offset Current 2 20 2 10 2 20 pA at TMAX 0.5 0.5 1.5 nA Open-Loop Gain V O = 0.2 V to 4 V RL = 100 k 500 1000 500 1000 500 1000 V/mV TMIN to TMAX 400 400 V/mV RL = 10 k 80 150 80 150 80 150 V/mV TMIN to TMAX 80 80 V/mV RL = 1 k 15 30 15 30 15 30 V/mV TMIN to TMAX 10 10 V/mV NOISE/HARMONIC PERFORMANCE Input Voltage Noise

0.1 Hz to 10 Hz 2 2 2 µV p-p

f = 10 Hz 25 25 25 nV/ √Hz f = 100 Hz 21 21 21 nV/ √Hz f = 1 kHz 16 16 16 nV/ √Hz f = 10 kHz 13 13 13 nV/ √Hz Input Current Noise

0.1 Hz to 10 Hz 18 18 18 fA p-p

f = 1 kHz 0.8 0.8 0.8 fA/ √ Hz Harmonic Distortion R L = 10 k to 2.5 V f = 10 kHz V O = 0.25 V to 4.75 V –93 –93 –93 dB DYNAMIC PERFORMANCE Unity Gain Frequency 1.8 1.8 1.8 MHz Full Power Response V O p-p = 4.5 V 210 210 210 kHz Slew Rate 3 3 3 V/ µs Settling Time to 0.01% 1.8 1.8 1.8 µs MATCHING CHARACTERISTICS Initial Offset 1.0 0.5 1.6 mV Max Offset Over Temperature 1.6 1.3 mV Offset Drift 3 3 µV/°C Input Bias Current 20 10 20 pA Crosstalk @ f = 1 kHz R L = 5 kΩ –130 –130 –130 dB f = 100 kHz –93 –93 –93 dB INPUT CHARACTERISTICS Common-Mode Voltage Range 2 –0.2 4 –0.2 4 –0.2 4 V TMIN to TMAX –0.2 4 –0.2 4 V CMRR V CM = 0 V to +2 V 66 80 69 80 66 80 dB TMIN to TMAX 66 66 dB Input Impedance Differential 10 13||0.5 10 13||0.5 10 13||0.5 Ω||pF Common Mode 10 13||2.8 10 13||2.8 10 13||2.8 Ω||pF OUTPUT CHARACTERISTICS Output Saturation Voltage 3 VOL–VEE ISINK = 20 µA 5 75 75 7 m V TMIN to TMAX 10 10 mV VCC–VOH ISOURCE = 20 µA 1 01 4 1 01 4 1 01 4m V TMIN to TMAX 20 20 mV VOL–VEE ISINK = 2 mA 40 55 40 55 40 55 mV TMIN to TMAX 80 80 mV VCC–VOH ISOURCE = 2 mA 80 110 80 110 80 110 mV TMIN to TMAX 160 160 mV VOL–VEE ISINK = 15 mA 300 500 300 500 300 500 mV TMIN to TMAX 1000 1000 mV VCC–VOH ISOURCE = 15 mA 800 1500 800 1500 800 1500 mV TMIN to TMAX 1900 1900 mV Operating Output Current 15 15 15 mA TMIN to TMAX 12 12 mA Capacitive Load Drive 350 350 350 pF POWER SUPPLY Power Supply Rejection V S+ = 5 V to 15 V 70 80 66 80 70 80 dB TMIN to TMAX 70 66 dB

(VS = 65 volts @ TA = +258C, VCM = 0 V, VOUT = 0 V unless otherwise noted) AD822A AD822B AD822S 1 Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Units DC PERFORMANCE Max Offset over Temperature 0.5 1.5 0.5 1 0.5 mV Offset Drift 2 2 2 µV/°C Input Bias Current V CM = –5 V to 4 V 2 25 2 10 2 25 pA at TMAX 0.5 5 0.5 2.5 0.5 nA Input Offset Current 2 20 2 10 2 pA at TMAX 0.5 0.5 1.5 nA Open-Loop Gain V O = –4 V to 4 V RL = 100 k 400 1000 400 1000 400 1000 V/mV TMIN to TMAX 400 400 V/mV RL = 10 k 80 150 80 150 80 150 V/mV TMIN to TMAX 80 80 V/mV RL = 1 k 20 30 20 30 20 30 V/mV TMIN to TMAX 10 10 V/mV NOISE/HARMONIC PERFORMANCE Input Voltage Noise f = 10 Hz 25 25 25 nV/ √Hz f = 100 Hz 21 21 21 nV/ √Hz f = 1 kHz 16 16 16 nV/ √Hz f = 10 kHz 13 13 13 nV/ √Hz Input Current Noise f = 1 kHz 0.8 0.8 0.8 fA/ √ Hz Harmonic Distortion R L = 10 k f = 10 kHz V O = ± 4.5 V –93 –93 –93 dB DYNAMIC PERFORMANCE Unity Gain Frequency 1.9 1.9 1.9 MHz Full Power Response V O p-p = 9 V 105 105 105 kHz Slew Rate 3 3 3 V/ µs Settling Time to 0.01% 1.8 1.8 1.8 µs MATCHING CHARACTERISTICS Initial Offset 1.0 0.5 1.6 mV Max Offset Over Temperature 3 2 2 mV Offset Drift 3 3 µV/°C Input Bias Current 25 10 25 pA Crosstalk @ f = 1 kHz R L = 5 kΩ –130 –130 –130 dB f = 100 kHz –93 –93 –93 dB INPUT CHARACTERISTICS Common-Mode Voltage Range 2 –5.2 4 –5.2 4 –5.2 4 V TMIN to TMAX –5.2 4 –5.2 4 V CMRR V CM = –5 V to +2 V 66 80 69 80 66 80 dB TMIN to TMAX 66 66 dB Input Impedance Differential 10 13||0.5 10 13||0.5 10 13||0.5 Ω||pF Common Mode 10 13||2.8 10 13||2.8 10 13||2.8 Ω||pF OUTPUT CHARACTERISTICS Output Saturation Voltage 3 VOL–VEE ISINK = 20 µA 5 75 75 7 m V TMIN to TMAX 10 10 mV VCC–VOH ISOURCE = 20 µA 1 01 4 1 01 4 1 01 4m V TMIN to TMAX 20 20 mV VOL–VEE ISINK = 2 mA 40 55 40 55 40 55 mV TMIN to TMAX 80 80 mV VCC–VOH ISOURCE = 2 mA 80 110 80 110 80 110 mV TMIN to TMAX 160 160 mV VOL–VEE ISINK = 15 mA 300 500 300 500 300 500 mV TMIN to TMAX 1000 1000 mV VCC–VOH ISOURCE = 15 mA 800 1500 800 1500 800 1500 mV TMIN to TMAX 1900 1900 mV Operating Output Current 15 15 15 mA TMIN to TMAX 12 12 mA Capacitive Load Drive 350 350 350 pF POWER SUPPLY Power Supply Rejection V S+ = 5 V to 15 V 70 80 66 80 70 80 dB TMIN to TMAX 70 66 dB AD822 REV. A –3–

Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Units DC PERFORMANCE Max Offset over Temperature 0.5 3 0.5 2.5 0.5 mV Offset Drift 2 2 2 µV/°C Input Bias Current V CM = 0 V 2 25 2 12 2 25 pA VCM = –10 V 40 40 40 pA at TMAX VCM = 0 V 0.5 5 0.5 2.5 0.5 nA Input Offset Current 2 20 2 12 2 20 pA at TMAX 0.5 0.5 1.5 nA Open-Loop Gain V O = +10 V to –10 V RL = 100 k 500 2000 500 2000 500 2000 V/mV TMIN to TMAX 500 500 V/mV RL = 10 k 100 500 100 500 150 400 V/mV TMIN to TMAX 100 100 V/mV RL = 1 k 30 45 30 45 30 45 V/mV TMIN to TMAX 20 20 V/mV NOISE/HARMONIC PERFORMANCE Input Voltage Noise f = 10 Hz 25 25 25 nV/ √Hz f = 100 Hz 21 21 21 nV/ √Hz f = 1 kHz 16 16 16 nV/ √Hz f = 10 kHz 13 13 13 nV/ √Hz Input Current Noise f = 1 kHz 0.8 0.8 0.8 fA/ √ Hz Harmonic Distortion R L = 10 k f = 10 kHz V O = ± 10 V –85 –85 –85 dB DYNAMIC PERFORMANCE Unity Gain Frequency 1.9 1.9 1.9 MHz Full Power Response V O p-p = 20 V 45 45 45 kHz Slew Rate 3 3 3 V/ µs Settling Time to 0.1% V O = 0 V to ± 10 V 4.1 4.1 4.1 µs to 0.01% 4.5 4.5 4.5 µs MATCHING CHARACTERISTICS Initial Offset 3 2 0.8 mV Max Offset Over Temperature 4 2.5 1.0 mV Offset Drift 3 3 µV/°C Input Bias Current 25 12 25 pA Crosstalk @ f = 1 kHz R L = 5 kΩ –130 –130 –130 dB f = 100 kHz –93 –93 –93 dB INPUT CHARACTERISTICS Common-Mode Voltage Range 2 –15.2 14 –15.2 14 –15.2 14 V TMIN to TMAX –15.2 14 –15.2 14 V CMRR V CM = –15 V to 12 V 70 80 74 90 70 90 dB TMIN to TMAX 70 74 dB Input Impedance Differential 10 13||0.5 10 13||0.5 10 13||0.5 Ω||pF Common Mode 10 13||2.8 10 13||2.8 10 13||2.8 Ω||pF OUTPUT CHARACTERISTICS Output Saturation Voltage 3 VOL–VEE ISINK = 20 µA 5 75 75 7 m V TMIN to TMAX 10 10 mV VCC–VOH ISOURCE = 20 µA 1 01 4 1 01 4 1 01 4m V TMIN to TMAX 20 20 mV VOL–VEE ISINK = 2 mA 40 55 40 55 40 55 mV TMIN to TMAX 80 80 mV VCC–VOH ISOURCE = 2 mA 80 110 80 110 80 110 mV TMIN to TMAX 160 160 mV VOL–VEE ISINK = 15 mA 300 500 300 500 300 500 mV TMIN to TMAX 1000 1000 mV VCC–VOH ISOURCE = 15 mA 800 1500 800 1500 800 1500 mV TMIN to TMAX 1900 1900 mV Operating Output Current 20 20 20 mA TMIN to TMAX 15 15 mA Capacitive Load Drive 350 350 350 pF POWER SUPPLY Power Supply Rejection V S+ = 5 V to 15 V 70 80 70 80 70 80 dB TMIN to TMAX 70 70 dB AD822–SPECIFICATIONS(VS = 615 volts @ TA = +258C, VCM = 0 V, VOUT = 0 V unless otherwise noted) REV. A–4–

REV. A –5– (VS = 0, 3 volts @ TA = +258C, VCM = 0 V, VOUT = 0.2 V unless otherwise noted) AD822A-3 V Parameter Conditions Min Typ Max Units DC PERFORMANCE Initial Offset 0.2 1 mV Max Offset over Temperature 0.5 1.5 mV Offset Drift 1 µV/°C Input Bias Current V CM = 0 V to +2 V 2 25 pA at TMAX 0.5 5 nA Input Offset Current 22 0 p A at TMAX 0.5 nA Open-Loop Gain V O = 0.2 V to 2 V RL = 100 k 300 1000 V/mV TMIN to TMAX 300 V/mV RL = 10 k 60 150 V/mV TMIN to TMAX 60 V/mV RL = 1 k 10 30 V/mV TMIN to TMAX 8 V/mV NOISE/HARMONIC PERFORMANCE Input Voltage Noise

0.1 Hz to 10 Hz 2 µV p-p

f = 10 Hz 25 nV/ √Hz f = 100 Hz 21 nV/ √Hz f = 1 kHz 16 nV/ √Hz f = 10 kHz 13 nV/ √Hz Input Current Noise

0.1 Hz to 10 Hz 18 fA p-p

f = 1 kHz 0.8 fA/ √Hz Harmonic Distortion R L = 10 k to 1.5 V f = 10 kHz V O = ± 1.25 V –92 dB DYNAMIC PERFORMANCE Unity Gain Frequency 1.5 MHz Full Power Response V O p-p = 2.5 V 240 kHz Slew Rate 3V / µs Settling Time to 0.1% V O = 0.2 V to 2.5 V 1 µs to 0.01% 1.4 µs MATCHING CHARACTERISTICS Initial Offset 1m V Max Offset Over Temperature 2m V Offset Drift 2 µV/°C Input Bias Current 10 pA Crosstalk @ f = 1 kHz R L = 5 kΩ –130 dB f = 100 kHz –93 dB INPUT CHARACTERISTICS Common-Mode Voltage Range 2 –0.2 2 V TMIN to TMAX –0.2 2 V CMRR V CM = 0 V to +1 V 60 74 dB TMIN to TMAX 60 dB Input Impedance Differential 1013||0.5 Ω||pF Common Mode 1013||2.8 Ω||pF OUTPUT CHARACTERISTICS Output Saturation Voltage 3 VOL–VEE ISINK = 20 µA5 7 m V TMIN to TMAX 10 mV VCC–VOH ISOURCE = 20 µA1 0 1 4 m V TMIN to TMAX 20 mV VOL–VEE ISINK = 2 mA 40 55 mV TMIN to TMAX 80 mV VCC–VOH ISOURCE = 2 mA 80 110 mV TMIN to TMAX 160 mV VOL–VEE ISINK = 10 mA 200 400 mV TMIN to TMAX 400 mV VCC–VOH ISOURCE = 10 mA 500 1000 mV TMIN to TMAX 1000 mV Operating Output Current 15 mA TMIN to TMAX 12 mA Capacitive Load Drive 350 pF POWER SUPPLY Quiescent Current T MIN to TMAX 1.24 1.6 mA Power Supply Rejection V S+ = 3 V to 15 V 70 80 dB TMIN to TMAX 70 dB

–6– AD822 REV. A NOTES 1See standard military drawing for 883B specifications. 2This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (+V S – 1 V) to +V S. Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 volt below the positive supply. 3VOL–VEE is defined as the difference between the lowest possible output voltage (V OL) and the minus voltage supply rail (V EE). VCC–VOH is defined as the difference between the highest possible output voltage (V OH) and the positive supply voltage (V CC). Specifications subject to change without notice. WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD822 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ABSOLUTE MAXIMUM RATINGS 1 Internal Power Dissipation S + 0.2 V) to –(20 V + VS) Operating Temperature Range NOTES 1Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 28-Pin Plastic DIP Package: θJA = 90°C/Watt 8-Pin Cerdip Package: θJA = 110°C/Watt 8-Pin SOIC Package: θJA = 160°C/Watt MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD822 is limited by the associated rise in junction temperature. For plastic packages, the maximum safe junction temperature is 145°C. For the cerdip packages, the maximum junction temperature is 175°C. If these maximums are exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated” condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the derating curves shown in Figure 24. While the AD822 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. With power supplies ± 12 volts (or less) at an ambient temperature of +25°C or less, if the output node is shorted to a supply rail, then the amplifier will not be destroyed, even if this condition persists for an extended period. ORDERING GUIDE Temperature Package Package Model1 Range Description Option AD822AN –40 °C to +85°C 8-Pin Plastic N-8 Mini-DIP AD822BN –40 °C to +85°C 8-Pin Plastic N-8 Mini-DIP AD822AR –40 °C to +85°C 8-Pin SOIC R-8 AD822BR –40 °C to +85°C 8-Pin SOIC R-8 AD822AR-3V –40 °C to +85°C 8-Pin SOIC R-8 AD822AN-3V –40 °C to +85°C 8-Pin Plastic N-8 Mini-DIP AD822A Chips –40 °C to +85°CD i e Standard Military Drawing2 –55°C to +125°C 8-Pin Cerdip Q-8 NOTES 1Spice model is available on ADI Model Disc. 2Contact factory for availability. METALIZATION PHOTOGRAPH Contact factory for latest dimensions. Dimensions shown in inches and (mm). AD822–SPECIFICATIONS

REV. A –15– Single Supply Voltage-to-Frequency Converter The circuit shown in Figure 44 uses the AD822 to drive a low power timer, which produces a stable pulse of width t 1. The positive going output pulse is integrated by R1-C1 and used as one input to the AD822, which is connected as a differential integrator. The other input (nonloading) is the unknown voltage, V IN. The AD822 output drives the timer trigger input, closing the overall feedback loop. +10V 0.1mF R SCALE ** 10k 499k, 1% VIN 499k, 1% 0V TO 2.5V FULL SCALE 0.01mF, 2% 0.01mF, 2% REF-02 U3B U3A 390pF 0.1mF THR TR DIS RV + OUT CV GND (NPO) 0.01mF R3 * 116k CMOS 555 OUT2 OUT1 NOTES: fOUT = VIN/(VREF*t1), t1 = 1.1*R3*C6 * = 1% METAL FILM, <50ppm/°C TC ** = 10%, 20T FILM, <100ppm/°C TC t1 = 33ms FOR fOUT = 20kHz @ VIN = 2.0V = 25kHz fS AS SHOWN. VREF = 5V CMOS 74HCO4 AD822B Figure 44. Single Supply Voltage-to-Frequency Converter the order of 0.01% full scale can be achieved with this circuit. delivers less than 1 mA to the entire circuit. errors caused by high unbalanced source impedances.

2 V Step (VS = 0 V, 3 V) 2 µs

5 V (VS = ± 5 V) 5 µs

Figure 47. Low Dropout Bipolar Bridge Driver Figure 46. 3 Volt Single Supply Stereo Headphone Driver

3 Volt, Single Supply Stereo Headphone Driver

range (20 Hz–20 kHz) are delivered to the headphones. C1821a–10–9/94PRINTED IN U.S.A. Dimensions shown in inches and (mm).