SD8250 STMICROELECTRONICS | Alldatasheet

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July 19, 1994 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .400 2LFL (S036) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P OUT = 250 W MIN. WITH 8.0 dB GAIN

DESCRIPTION

The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed out- put and driver applications. This device is designed for operation under mod- erate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive. Low RF thermal resistance and computerized au- tomatic wire bonding techniques ensure high re- liability and product consistency. The SD8250 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION BRANDING STAN250A ORDER CODE SD8250 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 90°C) 575 W IC Device Current* 20 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance(1) 0.28 °C/W *Applies only to rated RF amplifier opera tion (1) Infra-Red Scan of Hot Spot Junct ion Temperature at Rated RF Operating Conditions SD8250 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 960 — 1215 MHz P IN = 40 W V CC = 50 V 250 295 — W ηcf = 960 — 1215 MHz P IN = 40 W V CC = 50 V 38 44 — % PG f= 960 — 1215 MHz P IN = 40 W V CC = 50 V 8.0 8.7 — dB Note: Pulse Width = 20µSec Duty Cycle = 5% TC = 25°C STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 35mA I E = 0mA 65 — — V BV EBO IE = 15mA I C = 0mA 4.0 — — V BV CES IC = 25mA I B = 0mA 60 — — V ICES VBE = 0V V CE = 50V — — 20 mA hFE VCE = 5V I C = 1A 10 — — — DYNAMIC TYPICAL PERFORMANCE 100 150 200 250 300 350 400 100 960 1090 TYPICAL BROADBAND POWER AMPLIFIER P O W E R O U T P U T W A T T S FREQUENCY (MHz) C O L L E C T O R E F F FREQUENCY (MHz) 1215 TYPICAL BROADBAND POWER AMPLIFIER PIN = 40W PIN = 32W PIN = 25W POUT PIN = 40W PIN = 32W PIN = 25W ηC 1.1 3.1 5.1 960 1090 I N P U T V S W R FREQUENCY (MHz)FREQUENCY (MHz) 1215 INPUT VSWR vs FREQUENCY I N P U T V S W R SD8250

PIN = 40 W VCC = 50 V Normalized to 50 ohms ZIN H L H L ZCL M M IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) L = 960 MHz 1.0 + j 3.5 1.9 − j 1.8 M = 1090 MHz 4.0 + j 3.5 1.6 − j 0.9 H =1215 MHz 2.2 + j 2.2 1.4 − j 1.1 100 30 35 40 45 50 TYPICAL RELATIVE OUTPUT & COLLEC- TOR EFFICIENCY vs COLLECTOR VOLTAGE P O W E R O U T P U T W A T T S COLLECTOR VOLTAGE (VOLTS) C O L L E C T O R E F F COLLECTOR VOLTAGE (VOLTS) TYPICAL POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE POUT ηC TYPICAL PERFORMANCE (cont’d) SD8250

All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 : 100 µF Electrolytic Capacitor, 63V C2 : .1 µF Ceramic Capacitor C3 : Feedthru Bypass SCI 712-022 C4 : Johanson 7475 Gigatrim .6 — 4.5 pF C5 : Johanson 7475 Gigatrim .6 — 4.5 pF C6 : D.C. Block 100 pF L1 : #26 Wire, 4 Turn .062 I.D. L2 : #26 Wire, 4 Turn .062 I.D. TEST CIRCUIT SD8250

Ref.: Dwg. No. 12-0222 rev. A PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron- ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. SD8250