STAC4932F STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical data
  • 1.1 Maximum ratings
  • 1.2 Thermal data
  • 2 Electrical characteristics
  • 2.1 Static
  • 2.2 Dynamic
  • 3 Impedance
  • 4 Typical performances
  • 5 Package mechanical data
  • 6 Revision history

Features

■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC® package

Description

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC Figure 1. Pin connection Table 1. Device summary

1 Electrical data

1.1 Maximum ratings

1.2 Thermal data

Table 2. Absolute maximum ratings (TCASE = 25°C) Table 3. Thermal data (1 msec - 10%)

2 Electrical characteristics

2.1 Static

2.2 Dynamic

Table 4. Static (per side) Table 5. Pulse / 1 mec - 10 %

3 Impedance

Figure 2. Current conventions Note: Measured gate to gate and drain to drain, respectively. Table 6. Impedance data

123 MHz (Pulse) TBD TBD

4 Typical performances

Figure 3. Maximum safe operating area Figure 4. Transient thermal impedance

Figure 7. Efficiency vs. output power

5 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com. Table 7. STAC244F package dimensions

Figure 8. Package dimensions

6 Revision history

Table 8. Document revision history 22-Feb-2010 1 First release. 03-Aug-2010 2 Updated description on cover page and Table 3. 02-Sep-2010 3 Updated Figure 8.