STA509A SANKEN | Alldatasheet
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n ID — VDS Characteristics ID (A) VDS (V) 0.01 0.1 0123456 n ID — VGS Characteristics ID (A) VGS (V) 012 3 6 45 n RDS (on) — ID Characteristics 0.2 RDS (on) (Ω ) ID (A) 0.8 0.6 0.4 –50 0 50 100 150 n RDS (on) — TC Characteristics 0.1 0.3 0.2 0.4 RDS (on) (Ω ) Tc (ºC) 0.5 0.5 1 5 10 50 n Safe Operating Area (single pulse) 0.5 0.1 ID (A) VDS (V) 10 (Tc = 25ºC) 0.05 0.1 0.5 1 6 n Re (yfs) — ID Characteristics 0.2 0.5 Re (yfs) (S) ID (A) VGS = 3V VGS = 4V VGS = 5V VGS = 10V VGS = 4V typ. ID = 1A VGS = 10V typ. VDS = 10V VDS = 10V VGS = 4V n IDR — VSD Characteristics IDR (A) VSD (V) Ta = –55ºC 25ºC 75ºC 150ºC 10ms 1ms 100 µs ID (pulse) max RDS (on) LIMITED Ta = –55ºC 25ºC 150ºC Ta = 150ºC 75ºC 25ºC –55ºC 25ºC Ta = 150ºC 75ºC –55ºC Symbol Ratings Unit (Ta=25ºC) (Ta=25ºC) VDSS 52–5 Symbol Test Conditions Ratings Unit V(BR) DSS ID = 1mA, VGS = 0V 47 52 57 min typ max IGSS µA µA VGS = –20V –1.0 IDSS S V VDS = 40V, VGS = 0V 100 VTH VDS = 10V, ID = 250µA2 . 5 1.0 Re (yfs) VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A 1.0 RDS (ON) Ω Ω V µs µs µs µs V VGS = 4V, ID = 1.0A Coss Ciss VDS = 10V f = 1.0MHz VGS = 0VCrss td (on) ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω , RG2 = 10Ω tr td (off) tf VSD ISD = 6A, VGS = 0V 0.2 0.25 0.25 0.3 pF pF pF 200 120 2.0 7.4 3.3 4.2 1.0 1.5 V GSS V V –20 ID A ID (pulse) *1 A 4 (Ta = 25ºC) 20 (Tc = 25ºC)PT EAS *2 Tch W W 150 Tstg ºC ºC mJ –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω Electrical CharacteristicsAbsolute Maximum Ratings MOS FET Array STA509A Equivalent Circuit Diagram External Dimensions STA a) Type No. b) Lot No. (Unit: mm) 9•2.54=22.86 –0.05 a b (2.54) 25.25–0.2 9.0–0.2 2.3–0.2 11.3–0.23.5–0.5 0.5–0.15 0–0.31.0–0.25 C1.5–0.5 4.0–0.2 0.5–0.15 1.2–0.2 13 24 SGDG 567 1 0 DG D S GD 0–0.3