STA508A SANKEN | Alldatasheet
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n ID — VDS Characteristics ID (A) VDS (V) 0 1.0 2.0 3.0 4.0 n ID — VGS Characteristics ID (A) VGS (V) 024 8 61 0 n RDS (on) — ID Characteristics 0.10
0.05 RDS (on) (Ω )
ID (A) 0.30 0.25 0.20 0.15 –50 0 50 100 150 n RDS (on) — TC Characteristics 0.10 0.30 0.20 0.40RDS (on) (Ω ) Tc (ºC) 0.45 01 0 2 0 3 0 4 0 5 0 n Capacitance — VDS Characteristics 100 500Capacitance (pF) VDS (V) 1000 1 5 10 50 100 200 n Safe Operating Area (single pulse) 0.5 0.1 ID (A) VDS (V) 20 (Ta = 25ºC) 0.05 0.1 0.5 1 5 10 n Re (yfs) — ID Characteristics 0.1 0.5 Re (yfs) (S) ID (A) VGS = 4.5V VGS = 10V VGS = 4V ID = 4A VGS = 10V VGS = 0V f = 1MHz Coss Ciss Crss VDS = 10V n IDR — VSD Characteristics IDR (A) VSD (V) VGS = 4V VGS = 10VTa = –55ºC 25ºC 75ºC 150ºC 100ms 10m s 1ms 100 µs ID (pulse) max ID (DC) max RDS (on) LIMITED Ta = –55ºC 25ºC 75ºC 150ºC Ta = 150ºC 75ºC 25ºC –55ºC VGS = 0V Symbol Ratings Unit (Ta=25ºC) (Ta=25ºC) VDSS 120 Symbol Test Conditions Ratings Unit V(BR) DSS ID = 100µA, VGS = 0V 120 min typ max IGSS µA µA VGS = –20V –5 IDSS S V VDS = 120V, VGS = 0V 100 VTH VDS = 10V, ID = 250µA 2.0 1.0 Re (yfs) VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A 5.0 RDS (ON) Ω Ω V ns ns ns ns V V GS = 4V, ID = 4.0A Coss Ciss VDS = 10V f = 1.0MHz VGS = 0VCrss td (on) ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω tr td (off) tf VSD ISD = 6A, VGS = 0V 0.15 0.2 0.2 0.25 pF pF pF 400 130 100 300 250 200 1.0 1.5 V GSS V V –20 –10 ID A ID (pulse)*1 A 4 (Ta = 25ºC) 20 (Tc = 25ºC)PT EAS *2 Tch W W 150 Tstg ºC ºC mJ –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Electrical CharacteristicsAbsolute Maximum Ratings MOS FET Array STA508A Equivalent Circuit Diagram a) Type No. b) Lot No. (Unit: mm) 9•2.54=22.86 –0.05 a b (2.54) 25.25–0.2 9.0–0.2 2.3–0.2 11.3–0.23.5–0.5 0.5–0.15 0–0.31.0–0.25 C1.5–0.5 4.0–0.2 0.5–0.15 1.2–0.2 13 24 SGDG 567 1 0 DG D S GD 0–0.3 External Dimensions STA4 (LF412)