STA-6033

STA-6033 SIRENZA | Alldatasheet

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The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

1 EDS-103643 Rev F

Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reli- ability. This product is specifically designed as a final stage for 802.11a equipment in the 4.9 - 5.9 GHz band. It can run from a 3.0V to 3.6V supply. Optimized on-chip impedance matching circuitry provides a 50Ω nominal RF input impedance. A single external output matching circuit covers the entire 4.9-5.9GHz band. The external output match allows for load line optimiza- tion for other applications or optimized performance over nar- rower bands. It is designed as a drop in replacement for similar parts in its class. This product is available in a RoHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix. Key Specifications Symbol Parameters: Test Conditions, App circuit page 4 Z0 = 50Ω, VCC = Vpc = 3.3V, Icq = 165mA, TBP = 30ºC Unit Min. Typ. Max. fO Frequency of Operation MHz 4900 5900 P1dB Output Power at 1dB Compression – 4.9 GHz dBm 26.5 Output Power at 1dB Compression – 5.875 GHz 24.0 25.5 S21 Gain at 4.9 GHz dB 27.5 29.5 31.5 Gain at 5.875 GHz 22.0 24.0 26.0 Pout Output power at 3% EVM 802.11a 54Mb/s - 5.15GHz dBm Output Power at 3% EVM 802.11a 54Mb/s - 5.875GHz 18 IM3 Third Order Intermod at Pout=15dBm per tone - 5.875GHz dBc -38 -34 NF Noise Figure at 5.875 GHz dB 5.7 IRL Worst Case Input Return Loss 4.9-5.875GHz dB 11 15 ORL Worst Case Output Return Loss 4.9-5.875GHz 8 12 Vdet Range Output Voltage Range for Pout=7dBm to 23dBm V 0.8 to 1.5 Icq Vcc Quiescent Current mA 130 165 190 IVPC Power Up Control Current,Vpc=3.3V ( IVPC1 + IVPC2 + IVPC3)m A 1 . 5 ILEAK Off Vcc Leakage Current Vpc=0V uA 5 100 Rth, j-l Thermal Resistance (junction - lead) ºC/W 28 Functional Block Diagram 4.9 – 5.9 GHz 3.3V Power Amplifier Product Features

Applications

• 802.11a 54Mb/s Class AB Performance Pout = 18dBm @ 3% EVM, 3.3V, 210mA
• High Gain = 27dB
• Output Return Loss < -12dB for Linear Tune
• On-chip Output Power Detector
• Simultaneous 4.9- 5.9GHz Broadband
• Pin Compatible with Microsemi LX5506
• Robust - Survives RF Input Power = +20dBm
• Power up/down control < 1μs
• 802.11a WLAN, OFDM, 5.8GHz ISM Band
• 802.16 WiMax, Fixed Wireless, UNII Product Description RFIN RFOUT Vcc Power Detector Vout Active Bias Active Bias Active Bias Power Up/Down Control 16 pin 3mm x 3mm QFN Pb RoHS Compliant & PackageGreen STA-6033 STA-6033Z

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

2 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp Pin Out Description Pin # Function Description 1,4,9,12,13 N/C Pins are not used. May be grounded, left open, or connected to adjacent pin. 5V P C 1 VPC1 is the bias control pin for the stage 1 active bias circuit. An external series resistor is required for proper setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage, do not apply voltage to this pin that is +1V greater than voltage applied to pin 16 (Vbias) unless Vpc supply current capability is less than 10 mA. 6V P C 2 VPC2 is the bias control pin for the stage 2 active bias circuit. An external series resistor is required for proper setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage, do not apply voltage to this pin that is +1V greater than voltage applied to pin 16 (Vbias) unless Vpc supply current capability is less than 10 mA. 7V P C 3 VPC3 is the control pin for the stage 3 active bias circuits. An external series resistor is required for proper setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage, do not apply voltage to this pin that is +1V greater than voltage applied to pin 16 (Vbias) unless Vpc supply current capability is less than 10 mA. 8 Vdet Ouput power detector voltage. Load with 10K-100K ohms to ground for best performance. 2,3 RFIN RF input pins. This is DC grounded internal to the IC. Do not apply voltage to this pin. All three pins must be used for proper operation. 10,11 RFOUT RF output pin. This is also another connection to the 3rd stage collector 14 VC3 3rd stage collector bias pin. Apply 3.0V to 3.6V to this pin. 15 VC2 2nd stage collector bias pin. Apply 3.0V to 3.6V to this pin. 16 VC1,Vbias 1st stage collector bias pin and active bi as network VCC. Apply 3.0V to 3.6V to this pin. EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 5). Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. Absolute Maximum Ratings Parameters Value Unit VC3 Collector Bias Current (pin16) 400 mA VC2 Collector Bias Current (pin18) 140 mA VC1 Collector Bias Current (pin19) 50 mA Device Voltage (V D)4 . 5 V Power Dissipation 1.4 W Operating Lead Temperature (T L) -40 to +85 ºC RF Input Power for 50 ohm load 20 dBm Storage Temperature Range -40 to +150 ºC Operating Junction Temperature (T J)+ 1 5 0 º C ESD Human Body Model - Class 1C 1000 V Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l Stage 1 Bias Stage 2 Bias Stage 3 Bias Pin 2, 3 Pin 10,11 Pin Pin Pin Pin Pin Pin Pin EPAD EPAD EPAD Simplified Device Schematic

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

3 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp 4.9 - 5.9 GHz Evaluation Board Data (Vcc = Vpc = 3.3V, Iq = 165mA) Typical S11 Input Return Loss -40 -35 -30 -25 -20 -15 -10 Frequency(GHz) S11(dB) -40c 0c 25c 70c 85c Typical S21 Gain Frequency(GHz) S21(dB) -40c 0c 25c 70c 85c Typical S22 Output Return Loss -25 -20 -15 -10 Frequency(GHz) S22(dB) -40c 0c 25c 70c 85c IM3 vs Pout (per tone) T=+25c Tone spacing = 1.2MHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 Pout(dBm) IM3(dBc) Typical S12 Isolation -50 -45 -40 -35 -30 Frequency(GHz) S12(dB) -40c 0c 25c 70c 85c Gain vs Pout, T=25c 10 12 14 16 18 20 22 24 26 28 Pout(dBm) Gain(dB)

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

4 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp Icq vs Vcc (Vcc and Vpc tied together) 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 Vcc/Vpc(V) Icq(A) +25c 0c -40c +70c +85c Idc vs Pout, T=25C 0.15 0.20 0.25 0.30 0.35 0.40 0.45 Pout(dBm) Idc(A) POUT @ 3% EVM vs Vcc for Fixed Vpc=3.3, F=5.725GHz 15.5 16.5 17.5 18.5 19.5 Vcc(V) Pout(dBm) 0c +25c +70c POUT @ 3% EVM vs Vcc for Fixed Vpc=3.3, F=5.725GHz 15.5 16.5 17.5 18.5 19.5 Vcc(V) Pout(dBm) 0c +25c +70c 4.9 - 5.9 GHz Evaluation Board Data (Vcc = 3.3V, Iq = 165mA) EVM(%) @ Pout=18dBm vs. Vpc Set Voltage vs. Temp F=5.725GHz 1.5 2.5 3.5 -40 -20 0 20 40 60 80 100 Temp(C) EVM(%) 2.9v 3v 3.1v 3.2v 3.3v Intentionally left blank Icq vs Vpc vs Vpc Enable Set Voltage, For Fixed Vcc=3.3v , T=+25c 0.05 0.1 0.15 0.2 0.25 0.3 Swept VPC (V) Icq(A)

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

5 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp 4.9 - 5.9 GHz Evaluation Board Data (Vcc = Vpc = 3.3V, Iq = 165mA) 802.11a EVM, OFDM, 54Mb/s, 64QAM EVM vs Pout, F=4.9GHz 0.5 1.5 2.5 3.5 4.5 4 6 8 1 01 21 41 61 82 0 POUT(dBm) EVM(%) +25c 0c -40c +70c +85c EVM vs Pout, T=25c 0.5 1.5 2.5 3.5 4.5 4 6 8 1 01 21 41 61 82 0 Pout(dBm) EVM(%) EVM vs Pout, F=5.15GHz 0.5 1.5 2.5 3.5 4.5 4 6 8 1 0 1 21 41 61 82 0 POUT(dBm) EVM(%) +25c 0c -40c +70c +85c EVM vs Pout, F=5.35GHz 0.5 1.5 2.5 3.5 4.5 4 6 8 1 0 1 21 41 61 82 0 POUT(dBm) EVM(%) +25c 0c -40c +70c +85c EVM vs Pout, F=5.725GHz 4 6 8 10 12 14 16 18 20 POUT(dBm) EVM(%) +25c 0c -40c +70c +85c EVM vs Pout, F=5.875GHz 4 6 8 10 12 14 16 18 20 POUT(dBm) EVM(%) +25c 0c -40c +70c +85c

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

6 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp 4.9 - 5.9 GHz Evaluation Board Data (Vcc = Vpc= 3.3V, Iq = 165mA) RF detector output (Vdet) vs Pout, T=25c 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 Output Power(dBm) Vdet(V) RF detector output(Vdet) vs Pout, F=4.9G Hz 0.8 1.2 1.4 1.6 1.8 10 12 14 16 18 20 22 24 26 Pout(dBm) Vdet(V) +25c 0c -40c +70c +85c RF detector output(Vdet) vs Pout, F=5.15GH z 0.8 1.2 1.4 1.6 1.8 10 12 14 16 18 20 22 24 26 Pout(dBm) Vdet(V) +25c 0c -40c +70c +85c RF detector output(Vdet) vs Pout, F=5.35GHz 0.8 1.2 1.4 1.6 1.8 10 12 14 16 18 20 22 24 26 Pout(dBm) Vdet(V) +25c 0c -40c +70c +85c RF detector output(Vdet) vs Pout, F=5.725GHz 0.8 1.2 1.4 1.6 1.8 10 12 14 16 18 20 22 24 26 Pout(dB m) Vdet(V) +25c 0c -4 0c +70c +85c RF detector output(Vdet) vs Pout F=5.875GHz 0.8 1.2 1.4 1.6 1.8 10 12 14 16 18 20 22 24 26 Pout(dBm ) Vdet(V) +25c 0c -40c +70c +85c

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

7 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp 4.9 - 5.9 GHz Evaluation Board Schematic For Vcc = Vpc = V+ = 3.3V Supply 4.9 - 5.9 GHz Evaluation Board Layout For Vcc = Vpc = V+ = 3.3V Supply - Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper finish Notes: R5 (0 ohm jumper) is required for parasitic inductance (~0.4nH). R4 simulates external circuit loading to ground. Recommended load range is 47K- 100K ohms. Pins 1,4,9,12,13 are unwired (N/C) inside the package. Refer to page 2 for detailed pin descriptions. Some of these pins are wired to adjacent pins or grounded as shown in the application circuit. This is to maintain consistency with the evaluation board layout shown below. It is recom- mended to use this layout and wiring to achieve the specified performance. To prevent potential damage, do not apply voltage to the Vpc pin that is +1V greater than voltage applied to pin 16 (Vbias/Vcc) unless Vpc supply current capability is less than 10 mA. See table below for other Vpc logic level resistor values.

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

8 EDS-103643 Rev F

STA-6033 4.9-5.9 GHz Power Amp Package Outline Drawing (dimensions in mm ): STA6033 lot id STA-6033 - 85/15 Sn/Pb plating STA-6033Z - Matte Sn plating Part Number Ordering Information Part Number Reel Size Devices/Reel STA-6033 13” 3000 STA-6033Z 13” 3000 Part Symbolization The part will be symbolized with an “STA-6033” for Sn/Pb plating or “STA-6033Z” for RoHS green compli- ant product. Marking designator will be on the top sur- face of the package. Recommended Land Pattern (dimensions in mm[in].): Recommended PCB Soldermask (SMOBC) for Land Pattern(dimensions in mm[in]): 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.38 [0.015] 0.29 [0.011]

0.005 CHAMFER

(8PL) Plated Thru (4PL) 1.20 [0.047] 0.50 [0.020] 0.25 [0.010] 1.20 [0.047] 0.46 [0.018] 0.53 [0.021] 3.17 [0.125]