ST9014

ST9014 SEMTECH_ELEC | Alldatasheet

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D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25℃) Symbol Value Unit Collector Base Voltage V CBO 50 V Collector Emitter Voltage V CEO 45 V Emitter Base Voltage V EBO 5 V Collector Current I C 100 mA Power Dissipation P tot 450 mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC

D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 9014 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=5V, IC=1mA C u r r e n t G a i n G r o u pA B C D h FE hFE hFE hFE 100 200 400 150 300 600 1000 Collector Base Breakdown Voltage at IC=100μA V(BR)CBO 50 - - V Collector Emitter Breakdown Voltage at IC=1mA V(BR)CEO 45 - - V Emitter Base Breakdown Voltage at IE=100μA V(BR)EBO 5 - - V Collector Cutoff Current at VCB=50V ICBO - - 50 nA Emitter Cutoff Current at VEB=5V IEBO - - 50 nA Collector Saturation Voltage at IC=100mA,IB=5mA VCE(sat) - 200 600 mV Base Saturation Voltage at IC=100mA,IB=5mA VBE(sat) - 900 - mV Gain Bandwidth Product at VCE=5V,IC=10mA fT - 300 - MHz Output Capacitance at VCB=10V,f=1MHz COB - 3.5 6 Pf Noise Figure at VCE=5V,IC=200μA at f=1KHz,RG=2KΩ NF - 2 10 dB

D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Admissible power dissipation versus temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 500 400 300 200 100 0 100 200 C Ptot Tamb ST 9014 o 0 0.5 1 VBE IC Collector current versus base emitter voltage ST 9014mW mA -110 tp 10-1 210 310 K/W ST 9014 rthA 10-6 10 -4 10 -2 1 10 S2 Pulse thermal resistance versus pulse duration Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 103 210 20.1 52 5 2 51 10 100 mA MHz ST 9014 Gain bandwidth product versus collector current fT IC VCE=5V o25 C o-50 C Tamb=100 Co Tamb=25 C o VCE=10V 0.2 0.1 0.05 0.02 0.01 0.005 v=0 tp Tv= PI T tp V ST 9014

D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) V 0.5 0.4 0.3VCEsat 0.2 0.1 -110 1 10 10 mA2 ST 9014 Collector saturation voltage versus collector current IC DC current gain versus collector current hFE -210 10 1 10 210 mA IC -310 10 mA110 IC F Common emitter collector characteristics Noise figure versus collector current ST 9014 ST 9014 VCE=5V f=1KHz Tamb=25 Co Tamb=100 Co o25 C o-50 C IC/IB=20 Tamb=25 C VCE=5V o -50 C 100 Co o dB 525252 -1 10 -2 -1 500 100K 10KRG=1M 500 210-1 5 1 25 VCE 1052 10 V2 IC=0.2mA RG=2K f=1KHz f=200Hz Tamb=25 C ST 9014 F dB o ST 9014

D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ICBO ST 9014 mA CCBO CEBO 0.1 1 10V VCBO,VEBO Collector base capacitance, Emitter base capacitance verses reverse bias voltage Tamb ST 9014 Collector cutoff current versus ambient temperature mA 0 100 200 Co 10-1 10 4 103 102 Test voltage VCBO: equal to the given maximum value VCES typical maximum 0.2 0.5 2 5 CCBO CEBO oTamb=25 C 10-3 -2 -1 1 10 mA 500 Noise figure versus collector current VCE=5V f=1KHz Tamb=25 C F

16 RG=1M

o dB 100K 10K ST 9014 IC 1-110 IC 10mA VCE=5V Tamb=25 C hie 102 o ST 9014 Relative h-parameters versus collector current 2 4 24 -110 hre hfe hoe ST 9014