ST9011 SEMTECH_ELEC | Alldatasheet
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Dated : 03/12/2004 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided in to six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25℃) Symbol Value Unit Collector Base Voltage V CBO 50 V Collector Emitter Voltage V CEO 30 V Emitter Base Voltage V EBO 5 V Collector Current I C 30 mA Power Dissipation P tot 400 mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC
Dated : 03/12/2004 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 9011 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain a t VCE=5V, IC=1mA Current Gain Group D E F G H I hFE hFE hFE hFE hFE hFE 132 108 146 198 Collector Base Breakdown Voltage a t I C=100μA V(BR)CBO 50 - - V Collector Emitter Breakdown Voltage a t IC=1mA V(BR)CEO 30 - - V Emitter Base Breakdown Voltage a t IE=100μA V(BR)EBO 5 - - V Collector Cutoff Current a t VCB=50V ICBO - - 100 nA Emitter Cutoff Current a t VCB=5V IEBO - - 100 nA Collector Emitter Saturation Voltage a t IC=10mA, IB=1mA VCE(sat) - 0.08 0.3 V Base Emitter Voltage a t VCE=5V, IC=1mA VBE(on) 0.60 0.7 0.75 V Collector Base Capacitance a t VCB=10V, f=1MHz CCBO - 1.5 - pF Gain Bandwidth Product a t VCE=5V, IC=1mA fT 150 370 - MHz