ST901T STMICROELECTRONICS | Alldatasheet
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Technical content
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON ■ HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE ■ VERY RUGGED BIPOLAR TECHNOLOGY ■ HIGH OPERATING JUNCTION TEMPERATURE ■ HIGH DC CURRENT GAIN APPLICATION ■ HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES
DESCRIPTION
The ST901T is a high voltage NPN silicon transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic package, designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector- Emitter Voltage (VBE = 0) 500 V V CEO Collector-Emitter Voltage (IB = 0) 350 V V EBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A ICM Collector Peak Current 8 A IB Base Current 0.5 A IBM Base Peak Current 2.5 A P tot Total Dissipation at Tc ≤ 25 oC3 0 W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC TO-220
R thj-case Thermal Resistance Junction-case Max 5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (IE = 0) V CE = 500 V V CE = 500 V Tcase = 125 oC 100 0.5 µ A mA ICEO Collector Cut-off Current (IB = 0) V CE = 350 V V CE = 350 V Tcase = 125 oC 100 0.5 µ A mA IEBO Emitter Cut-off Current (IC = 0) V EB = 5 V 10 µ A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 10 mA L = 10 mH IB = 0 350 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 2 A IB = 20 mA 1.3 V V BE(sat)∗ Base-Emitter Saturation Voltage IC = 2 A IB = 20 mA 1.8 V hFE ∗ DC Current Gain I C = 2 A VCE =2 V IC = 4 A VCE =2 V 1500 500 Functional Test V CC = 24 V Vclamp = 350 V L = 4 mH ts tf INDUCTIVE LOAD Storage Time Fall Time V CC = 12 V Vclamp = 250 V L = 4 mH IC = 2 A IB = 20 mA V BE = -3 V 1.5 µ s µ s ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ST901T
DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C ST901T
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . ST901T