8550 DGNJDZ | Alldatasheet

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PNP Silicon Epitaxial Planar Transistor for switching and amplifie r applications. Especially suitable for AF-driver st ages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As complementary type the NP N transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25℃) Symbol Value Unit Collector Emitter Voltage -V CEO 25 V Collector Base Voltage -V CBO 40 V Emitter Base Voltage -V EBO 6 V Collector Current -I C 800 mA Peak Collector Current -I CM 1 A Base Current -I B 100 mA Power Dissipation P tot 625 1) mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain a t - VCE=1V, -IC=100mA a t - V CE=1V, -IC=350mA ST 8550B ST 8550C ST 8550D ST 8550E h FE hFE hFE hFE hFE 120 160 300 120 200 300 380 Collector Cutoff Current a t - VCB=35V ICBO - - 100 nA Collector Saturation Voltage a t - IC=500mA, -IB=50mA VCE(sat) - - 0.5 V Base Saturation Voltage a t - IC=500mA, -IB=50mA VBE(sat) - - 1.2 V Collector Emitter Breakdown Voltage a t - IC=2mA V(BR)CEO 25 - - V Collector Base Breakdown Voltage a t - IC=10μA V(BR)CBO 40 - - V Emitter Base Breakdown Voltage a t - IE=100μA V(BR)EBO 6 - - V Gain Bandwidth Product a t - VCE=5V, -IC=10mA, f=50MHz fT - 100 - MHz Collector Base Capacitance a t - VCB=10V, f=1MHz CCBO - 12 - pF Thermal Resistance Junction to Ambient R thA - - 200 1) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

at Tamb=25 C Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case ST 8550 Tamb Ptot 0.2 100 0.4 0.6 0.8 W 150 C 2 o10 200 Co -IC 2 0 1 -VBE o Collector current versus base emitter voltage mA 25 C -50 Co o V 2 2rthA 0.2 v=0 tp -6 -4 10 10 10-5 -1-21010-3 10 T 0.01 5 0.005 tp tpv=T 0.05 0.025 0.1

210 S10

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case ST 8550K/W 0.55 100 Tamb Collector cutoff current versus ambient temperature nA -ICES

4 ST 8550

-VCE -VBE=0.7V 100 12 V 0.75 ST 8550 Common emitter collector characteristics mA 400 300 500 -IC 0.9 0.85 0.8 -IC -VCE 100 200 0.4 -IB=0.2mA 12 V 0.8 0.6 1.2 Common emitter collector characteristics 3.2 300 400 mA 500 1.8 1.4 1.6 2.4 ST 8550 2.8 -IB=0.05mA 01 0 -VCE 20V 0.1 0.15 ST 8550 0.35 0.25 mA 100 -IC 60 Common emitter collector characteristics 0.3 0.2 DC current gain versus collector current 150 C hFE 100 200 300 -1 1 10 Tamb=25 Co 1000 700 400 500 -VCE =1V o 10 2 -IC 10 3 -50 Co ST 8550

Tamb=25 C f=20MHz -VCE=5V 1010 5 2 5 2 5 2 -IC Gain bandwidth product versus collector current fT 10 2 MHz 10 3 o 310 mA -50 C ST 8550 Collector saturation voltage versus collector current =10-Ic -IB 0.4 -VCE sat 0.1 0.3 0.2 0.5 V 150 C o 25 Co o typical limits at Tamb=25 Co -IC 10 mA3 10 mA -IC -50 C -110 1 10 10 2 25 Co o 150 Co -IB -Ic Base saturation voltage versus collector current typical limits at Tamb=25 C =10 V -VBE sat ST 8550 o