ST8550 SEMTECH_ELEC | Alldatasheet
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Dated : 14/08/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -V CBO 40 V Collector Emitter Voltage -V CEO 25 V Emitter Base Voltage -V EBO 6 V Collector Current -I C 2 A Base Current -I B 100 mA Power Dissipation P tot 1 W Junction Temperature T j 150 OC Storage Temperature Range T S - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain a t - VCE = 1 V, -IC = 5 mA at -V CE = 1 V, -IC = 100 mA at -V CE = 1 V, -IC = 1.5 A 8550C 8550D h FE hFE hFE hFE 120 160 200 300 Collector Base Cutoff Current at -V CB = 35 V -ICBO - - 100 nA Emitter Base Cutoff Current at -V EB = 6 V -IEBO - - 100 nA Collector Base Breakdown Voltage at -I C = 100 µA -V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage a t - IC = 2 mA -V(BR)CEO 25 - - V Emitter Base Breakdown Voltage a t - IE = 100 µA -V(BR)EBO 6 - - V Collector Emitter Saturation Voltage a t - IC = 1.5 A, -IB = 100 mA -VCE(sat) - - 0.5 V Base Emitter Saturation Voltage at -I C = 1.5 A, -IB = 100 mA -VBE(sat) - - 1.2 V Base Emitter On Voltage at -I C = 10 mA, -VCE = 1 V -VBE(on) - - 1 V Gain Bandwidth Product at -V CE = 10 V, -IC = 50 mA fT 120 - - MHz Collector Base Capacitance at -V CB = 10 V, f = 1 MHz COB - 15 - pF 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g