ST83003 STMICROELECTRONICS | Alldatasheet

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Technical content

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES

DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The ST83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST93003, its complementary PNP transistor. INTERNAL SCHEMATIC DIAGRAM October 2002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (VBE = 0) 700 V V CEO Collector-Emitter Voltage (IB = 0) 400 V V EBO Emitter-Base Voltage (IC = 0, IB = 0.75 A, tp < 10µs, Tj < 150oC) V (BR)EBO V IC Collector Current 1.5 A ICM Collector Peak Current (tp < 5 ms) 3 A IB Base Current 0.75 A IBM Base Peak Current (tp < 5 ms) 1.5 A P tot Total Dissipation at Tc = 25 oC4 0 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 3 2 SOT-32

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.12 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector Cut-off Current (VBE = -1.5V) V CE = 700V V CE = 700V Tj = 125oC mA mA V (BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 mA 12 18 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 10 mA L = 25 mH 400 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 0.5 A IB = 0.1 A IC = 0.35 A IB = 50 mA 0.5 V V V BE(sat)∗ Base-Emitter Saturation Voltage IC = 0.5 A IB = 0.1 A 1 V hFE ∗ DC Current Gain I C = 10 mA VCE = 5 V IC = 0.35 A VCE = 5 V IC = 1 A VCE = 5 V 25 32 tr ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time IC = 0.35 A VCC = 125 V IB1 = 70 mA IB2 = -70 mA Tp ≥ 25 µs (see figure 2) 1.5 100 2.2 0.2 2.9 ns µ s µ s ts tf INDUCTIVE LOAD Storage Time Fall Time I C = 0.5 A IB1 = 0.1 A V BE(off) = -5 V L = 10 mH V clamp = 300 V (see figure 1) 450 ns ns ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % ST83003

Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage ST83003

Resistive Load Fall Time Resistive Load Storage Time Inductive Load Fall Time Inductive Load Storage Time Reverse Biased SOA ST83003

DIM. mm inch A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 0.118 0.126 H 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V1 0 o 10o 0016114/B SOT-32 (TO-126) MECHANICAL DATA 1: Base 2: Collector 3: Emitter ST83003

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com ST83003