ST8100 SMCDIODE | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 7
Technical content
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 ST8100/STB8100/STF8100/STD8100 SCHOTTKY RECTIFIER Applications Features ST8100 STB8100 STD8100 STF8100 TO-220AC D2PAK DPAK ITO-220AC Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 100 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 8 A PeakOneCycleNon-RepetitiveSurge Current IFSM 8.3ms,HalfSinepulse,TC =25C 130 A 150 C TJ operation Center tap configuration Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Trench MOS Schottky technology This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol ST8100 STB8100 STD8100 STF8100 Units JunctionTemperature TJ -55to+150 C StorageTemperature Tstg -55to+150 C TypicalThermalResistance JunctiontoCase RJC 3.5 3.5 2.8 6.5 C/W CaseStyle TO-220AC/D2PAK/DPAK/ITO-220AC Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @8A,Pulse,TJ =25C 0.68 0.75 V VF2 @8A,Pulse,TJ =125C 0.58 0.70 V ReverseCurrent* IR1 @VR =ratedVR TJ =25C 0.014 0.2 mA IR2 @VR =ratedVR TJ =125C 6.80 30 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz 369 - pF Thermal-Mechanical Specifications: Tube Specification Tube Specification(TO-220AC/ITO-220AC) Device Package Weight Shipping ST8100 TO-220AC 1.6g 50pcs/tube STB8100 D²PAK 1.85g 800pcs/reel STD8100 DPAK 0.39g 2500pcs/reel STF8100 ITO-220AC 1.6g 50pcs/tube
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Junction Capacitance TJ=125℃ TJ=25℃ TJ=25℃ TJ=25℃TJ=125℃ Fig.3-Typical Instantaneous Forward Voltage Characteristics
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 Carrier Tape Specification D2PAK SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Marking Diagram Carrier Tape Specification DPAK SYMBOL Millimeters Min. Max. A 6.80 7.00 B 10.40 10.60 C 2.60 2.80 d Φ1.45 Φ1.65 E 1.65 1.85 F 7.40 7.60 P0 3.90 4.10 P 7.90 8.10 P1 1.90 2.10 W 15.90 16.30 WhereXXXXX isYYWWL ST =Device Type B/D/F =Packagetype 8 =ForwardCurrent (8A) 100 =ReverseVoltage(100V) SSG = SSG YY =Year WW =Week L =Lot Number Cautions:Moldingresin Epoxy resinUL:94V-0
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 Mechanical Dimensions TO-220AC Symbol Dimensions in millimeters Min. Typical Max. A 4.47 4.70 4.85 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.64 14.94 15.24 D1 8.50 8.07 8.90 E 10.01 10.16 10.31 E1 9.98 10.18 10.38 e1 4.98 5.08 5.18 H1 6.04 6.24 6.44 L 13.00 13.86 14.08 L1 3.56 3.80 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 5° Θ2 4° Θ3 4° Mechanical Dimensions DPAK SYMBOL Millimeters Inches Min. Max. Min. Max. A 2.20 2.40 0.087 0.094 A1 0.00 0.127 0.000 0.005 b 0.66 0.86 0.026 0.034 c 0.46 0.60 0.018 0.024 D 6.50 6.70 0.256 0.264 D1 5.13 5.46 0.202 0.215 D2 4.83REF. 0.190REF. E 6.00 6.20 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.70 10.40 0.381 0.409 L1 2.90REF. 0.144REF. L2 1.40 1.70 0.055 0.067 L3 1.60REF. 0.063REF. L4 0.60 1.00 0.024 0.039 Φ 1.10 1.30 0.043 0.051 Θ 0° 8° 0° 8° h 0.00 0.30 0.000 0.012 V 5.35REF. 0.211REF.
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 Mechanical Dimensions D2PAK Symbol Dimensions in millimeters Min. Typical Max. A 4.47 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 c1 1.17 1.27 1.37 D 8.50 8.70 8.90 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.31 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.74 L1 1.12 1.27 1.42 L2 1.30 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4° SYMBOL Dimensions in millimeters Min. Typical Max. A 4.30 4.50 4.70 A1 1.10 1.30 1.50 A2 2.80 3.00 3.20 A3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 c 0.50 0.60 0.75 D 14.80 15.00 15.20 E 9.96 10.16 10.36 e - 2.55 - e1 5.00 5.10 5.16 H1 6.50 6.70 6.90 L 12.70 13.20 13.70 L1 1.60 1.80 2.00 L2 0.80 1.00 1.20 L3 0.60 0.80 1.00 L4 - 1.10 1.50 ΦP1(上口) 3.30 3.50 3.70 ΦP2(下口) 2.99 3.19 3.39 Q 2.50 2.70 2.90 Θ1 5° Θ2 4° Θ3 10° Θ4 5° Θ5 5° Mechanical Dimensions ITO-220AC
Data Sheet N1578, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com ST8100 STB8100 STD8100 STF8100 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing) Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..