ST780C

ST780C IRF | Alldatasheet

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DISCRETE POWER DIODES and THYRISTORS DATA BOOK

PHASE CONTROL THYRISTORS Hockey Puk Version ST780C..L SERIES D-343 Bulletin I25192/B

ST780C..L Series 2222222222222 D-344 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /VRRM , max. repetitive VRSM , maximum non- IDRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max V V mA 04 400 500 06 600 700 IT(AV) Max. average on-state current 1350 (500) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 2700 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one-cycle 24400 t = 10ms No voltage non-repetitive surge current 25600 A t = 8.3ms reapplied 20550 t = 10ms 100% V RRM 21500 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 2986 t = 10ms No voltage Initial TJ = TJ max. 2726 t = 8.3ms reapplied 2112 t = 10ms 100% V RRM 1928 t = 8.3ms reapplied I2√t Maximum I2√t for fusing 29860 KA 2√s t = 0.1 to 10ms, no voltage reapplied V T(TO) 1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance V TM Max. on-state voltage 1.31 V Ipk= 3600A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.80 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.14 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.13 (I > π x IT(AV)),TJ = TJ max. Parameter ST780C..L Units Conditions 0.90 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA 2s V m Ω mA TJ = 25°C, anode supply 12V resistive load di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω , tr ≤ 1µs of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM , TJ = 25°C ITM = 750A, TJ = TJ max, di/dt = 60A/µs , VR = 50V dv/dt = 20V/µs , Gate 0V 100Ω, tp = 500µs Parameter ST780C..L Units Conditions Switching

1000 A/µs

td Typical delay time 1.0 tq Typical turn-off time 150 µs ST780C..L 80

ST780C..L Series D-348 Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled

ST780C..L Series D-349 Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 11 - Gate Characteristics

ST780C..L Series D-3453333 dv/dt Maximum critical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current Blocking 500 V/µ s TJ = TJ max. linear to 80% rated VDRM Parameter ST780C..L Units Conditions 80 mA TJ = TJ max, rated V DRM /VRRM applied PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage TJ = - 40°C mA TJ = 25°C TJ = 125°C TJ = - 40°C V TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST780C..L Units Conditions 5.0 Triggering TYP. MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedVGT DC gate voltage required to trigger IGT DC gate current required to trigger W V TJ = TJ max, tp ≤ 5ms Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJ-hsMax. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled R thC-hsMax. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.006 DC operation double side cooled F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Parameter ST780C..L Units Conditions K/W Case style TO - 200AC (B-PUK) See Outline Table K/W Thermal and Mechanical Specification

ST780C..L Series 2222222222222 D-346 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt:None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Ordering Information Table ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Device Code 51 2 3 4 ST 78 0 C 06 L 1 76 8 Single SideDouble Side Single SideDouble Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 Sinusoidal conductionRectangular conduction Conduction angle Units Conditions

ST780C..L Series D-3473333 Fig. 2 - Current Ratings Characteristics Outline Table Fig. 1 - Current Ratings Characteristics TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 58 .5 (2 .3 ) D IA . M A X . 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 4.7 (0.18) 27 (1.06 ) M A X . 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 36.5 (1.44) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. Case Style TO-200AC (B-PUK) All dimensions in millimeters (inches)