ST733C

ST733C IRF | Alldatasheet

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DISCRETE POWER DIODES and THYRISTORS DATA BOOK

INVERTER GRADE THYRISTORS Hockey Puk Version ST733C..L SERIES Bulletin I25188 case style TO-200AC (B-PUK)

Features

Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters IT(AV) 940 A @ T hs 55 °C IT(RMS) 1900 A @ T hs 25 °C ITSM @ 50Hz 20000 A @ 60Hz 20950 A I2t @ 50Hz 2000 KA 2s @ 60Hz 1820 KA 2s V DRM /VRRM 400 to 800 V tq range 10 to 20 µs TJ - 40 to 125 °C Parameters ST733C..L Units Major Ratings and Characteristics

ST733C..L Series ST733C..L 75 Voltage V DRM /VRRM , maximum VRSM , maximum IDRM /IRRM max. Type number Code repetitive peak voltage non-repetitive peak voltage@ T J = TJ max. V V mA 04 400 500 08 800 900 ELECTRICAL SPECIFICATIONS Voltage Ratings Frequency Units 50Hz 2200 1900 3580 3100 6800 5920 400Hz 2050 1660 3600 3130 3750 3240 1000Hz 1370 1070 2900 2450 2120 1780 A 2500Hz 500 370 1220 980 960 770 Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current di/dt 50 50 - - - - A/µ s Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF ITM 180oel180oel 100µs ITM ITM Current Carrying Capability V IT(AV) Max. average on-state current 940 (350) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1900 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one half cycle, 20000 t = 10ms No voltage non-repetitive surge current 20950 A t = 8.3ms reapplied 16800 t = 10ms 100% V RRM 17600 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 2000 t = 10ms No voltage Initial TJ = TJ max 1820 t = 8.3ms reapplied 1410 t = 10ms 100% V RRM 1290 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 20000 KA 2√s t = 0.1 to 10ms, no voltage reapplied Parameter ST733C..L Units Conditions On-state Conduction KA 2s

ST733C..L Series Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

ST733C..L Series Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics

1 E 1

1 E 2

1 E 3

1 E 4

1 E 5

1 E 1 1 E 2 1 E 3 1 E 4

P u lse B a se w id th (µ s) 20 jo u le s p e r p u lse 0.5 ST733C ..L Se rie s Sin u so id a l p u lse 0.4 0.3 tp

1 E 4 1 E 1 1 E 2 1 E 3 1 E 4

P u lse B a se w id th (µ s) 20 jo u le s p e r p u lse 0 .5 0.4 0.3 ST7 33 C ..L Se rie s R e c ta n g u la r p u lse d i/d t = 50 A /µ stp

50 H z400

P ulse B a se w idth (µs) S nub b e r circuit R = 10 o hm s C = 0.47 µF V = 80% V S T 733C ..L S erie s T ra p e zo id a l p ulse T = 55°C d i/d t = 50A /µs C 3000 s s D D R M tp 1E 1 500 2000 1E 2 1E 3 1E 4 1E 5 1E 1 1E 2 1E 3 1E 4

50 H z

P ulse a se w id th (µs) 500 0 S nub b e r circuit R = 10 o hm s C = 0.47 µF V = 80% V s s D D R M S T 733C ..L S e rie s T ra p e zo id a l p ulse T = 4 0°C d i/d t = 100A /µs C 1E 4 5 00 2000 3000 B 1E 1 1E 2 1E 3 1E 4 P ulse Ba se w id th (µs) S nub b e r circuit R = 10 o hm s C = 0.47 µF V = 80% V 3000 s s D D R M S T 733C ..L S erie s T ra p e zo id a l p ulse T = 55°C d i/d t = 100A /µs Ctp 1E 1 500 2000 1E 2 1E 3 1E 4 1E 5 1E 1 1E 2 1E 3 1E 4 P ulse B a se w id th (µs) 5000 S nub b e r circuit R = 10 o hm s C = 0.47 µF V = 80% V s s D D R M S T 733C ..L S e rie s T ra p e zo id a l p ulse T = 40°C d i/d t = 50A /µs C 1E 4 500 2000 3000

ST733C..L Series Fig. 17 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 V G D IG D (b ) (a ) (1) (2) (3) Instanta ne o us G a te C urre nt (A ) a ) R e co m m e nd e d lo a d line for b ) R e co m m e nd e d lo a d line for <=30% ra te d d i/d t : 10V , 10ohm s F re q ue ncy Lim ite d b y P G (A V ) rate d d i/d t : 20V , 10ohm s; tr<=1 µs tr<=1 µs D e vice : S T 733C ..L S e rie s (1) P G M = 10W , tp = 20m s (2) P G M = 20W , tp = 10m s (3) P G M = 40W , tp = 5m s (4) P G M = 60W , tp = 3.3m s R e cta ng ula r g ate p ulse (4)

ST733C..L Series Fig. 10 - Thermal Impedance ZthJC Characteristic Fig. 12 - Reverse Recovery Current CharacteristicsFig. 11 - Reverse Recovered Charge Characteristics Fig. 9 - On-state Voltage Drop Characteristics Fig. 13 - Frequency Characteristics

ST733C..L Series V TM Max. peak on-state voltage 1.63 ITM = 1700A, TJ = TJ max, tp = 10ms sine wave pulse V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance rt2 High level value of forward slope resistance IH Maximum holding current 600 TJ = 25°C, IT > 30A IL Typical latching current 1000 TJ = 25°C, VA = 12V, Ra = 6Ω, IG = 1A Parameter ST733C..L Units Conditions On-state Conduction 1.09 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.20 (I > π x IT(AV)), TJ = TJ max. V 0.32 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.29 (I > π x IT(AV)), TJ = TJ max. m Ω mA di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM , ITM = 2 x di/dt of turned-on current Gate pulse: 20V 20Ω , 10µs 0.5µs rise time TJ= 25°C, VDM = rated VDRM , ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = -40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Switching Parameter ST733C..L Units Conditions

1000 A/µs

td Typical delay time 1.5 Min Max dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM , higher value off-state voltage available on request IRRM Max. peak reverse and off-state IDRM leakage current Parameter ST733C..L Units Conditions Blocking

500 V/µ s

75 mA TJ = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms +V GM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Triggering Parameter ST733C..L Units Conditions W TJ = TJ max., f = 50Hz, d% = 50 V TJ = TJ max, tp ≤ 5ms 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω TJ = TJ max, rated VDRM applied µs tq Max. turn-off time 10 20

ST733C..L Series TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJ-hsMax. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled R thC-hsMax. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.005 DC operation double side cooled F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Parameter ST733C..L Units Conditions K/W Thermal and Mechanical Specification Case style TO - 200AC (B-PUK) See Outline Table K/W Single SideDouble Side Single SideDouble Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 60° 0.020 0.021 0.021 0.022 30° 0.036 0.036 0.036 0.036 Sinusoidal conductionRectangular conduction Conduction angle Units Conditions ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Ordering Information Table 5 6 8 9 ST 73 3 C 08 L H K 1 3 4 107 Device Code 1 2 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) dv/dt - tq combinations available dv/dt (V/µs)20 50 100 200 400

10 CN DN EN -- --

12 CM DM EM FM * --

15 CL DL EL FL * HL

18 CP DP EP FP HP

20 CK DK EK FK H

tq(µs) * Standard part number. All other types available only on request.

ST733C..L Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Outline Table TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 5 8.5 (2 .3 ) D IA . M A X . 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 4.7 (0.18) 2 7 (1 .06 ) M A X . 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 36.5 (1.44) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. Case Style TO-200AC (B-PUK) All dimensions in millimeters (inches)