ST730C20L2

ST730C08L0 IRF | Alldatasheet

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Metal case with ceramic insulator International standard case TO-200AC (B-PUK) Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 990 A @ Ths 55 °C IT(RMS) 2000 A @ Ths 25 °C ITSM @ 50Hz 17800 A @ 60Hz 18700 A I2t@ 50Hz 1591 KA 2s @ 60Hz 1452 KA 2s VDRM/VRRM 800 to 2000 V tq typical 150 µs TJ - 40 to 125 °C Parameters ST730C..L Units Major Ratings and Characteristics case style TO-200AC (B-PUK) 990A PHASE CONTROL THYRISTORS Hockey Puk Version ST730C..L SERIES Bulletin I25191 rev. D 04/03 www.irf.com

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω , tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 750A, TJ = TJ max, di/dt = 60A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, tp = 500µs Parameter ST730C..L Units Conditions Switching

1000 A/µs

td Typical delay time 1.0 tq Typical turn-off time 150 µs Voltage V DRM /VRRM , max. repetitive V RSM , maximum non- I DRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 08 800 900 12 1200 1300 ST730C..L 14 1400 1500 80 16 1600 1700 18 1800 1900 20 2000 2100 ELECTRICAL SPECIFICATIONS Voltage Ratings IT(AV) Max. average on-state current 990 (375) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 2000 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one-cycle 17800 t = 10ms No voltage non-repetitive surge current 18700 A t = 8.3ms reapplied 15000 t = 10ms 100% V RRM 15700 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 1591 t = 10ms No voltage Initial T J = TJ max. 1452 t = 8.3ms reapplied 1125 t = 10ms 100% V RRM 1027 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 15910 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) 1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.62 V I pk= 2000A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.98 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.32 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.27 (I > π x IT(AV)),TJ = TJ max. Parameter ST730C..L Units Conditions 1.12 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA TJ = 25°C, anode supply 12V resistive load

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 dv/dt Maximum cr itical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current Blocking 500 V/ µsT J = TJ max. linear to 80% rated VDRM Parameter ST730C..L Units Conditions 80 mA T J = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 10.0 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage GM Maximum peak negative gate voltage TJ = - 40°C mA T J = 25°C TJ = 125°C TJ = - 40°C VT J = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST730C..L Units Conditions 5.0 Triggering TYP. MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - VGD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedV GT DC gate voltage required to trigger IGT DC gate current required to trigger W V TJ = TJ max, tp ≤ 5ms TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.006 DC operation double side cooled F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Parameter ST730C..L Units Conditions K/W Case style TO - 200AC (B-PUK) See Outline Table K/W Thermal and Mechanical Specification

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Ordering Information Table Single Side Double Side Single Side Double Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.010 0.011 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions Device Code 51 2 3 4 ST 73 0 C 20 L 1 76 8 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 200 400 600 800 1000 1200 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Period Maximum Allowable Heats ink T emperature (°C) S T 730C..L Series (S ingle S ide Cooled) R (DC) = 0.073 K/ WthJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowabl e H eats ink T emperature (°C) S T 730C..L Series (S ingle S ide Cooled) R (DC) = 0.073 K/ W thJ-hs Case Style TO-200AC (B-PUK) All dimensions in millimeters (inches) TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 58.5 (2.3) DIA. MAX. 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 4.7 (0.18) 27 (1.06) MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 36.5 (1.44) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 1 10 100 Number Of E qual Amplitud e Half Cycle Current Pulses (N) P eak H alf S ine Wave On-s tate Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J S T 730C..L S eries At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 100 110 120 130 0 200 400 600 800 1000 1200 1400 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) S T 730C..L S eries (Double S ide Cooled) R (DC) = 0.031 K/ WthJ-hs Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 100 110 120 130 0 400 800 1200 1600 2000 2400 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maximum Allowable H eats ink Temper ature (°C) S T 730C..L S eries (Double S ide Cooled) R (DC) = 0.031 K/ WthJ-hs 500 1000 1500 2000 2500 0 200 400 600 800 1000 1200 1400 180° 120° 90° 60° 30° RM S Li m i t Conduction Angle Maximum Averag e On-st ate Pow er Loss (W) Average On-s tate Current (A) S T 730C..L S eries T = 125°CJ 500 1000 1500 2000 2500 3000 3500 0 400 800 1200 1600 2000 2400 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average On-s tate P ower Los s (W) Average On-s tate Current (A) S T 730C..L S eries T = 125°C J Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 0.01 0.1 1 P uls e T rain Duration (s ) Vers us P uls e T rain Duration. Control P eak H alf S ine Wave On-s tate Current (A) Initial T = 125°C No Voltage R eapplied R ated V R eappliedRRM J S T 730C..L S eries Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained.

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 Fig. 9 - On-state Voltage Drop Characteristics 100 1000 10000 0 . 511 . 522 . 533 . 5 T = 25°CJ Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T = 125°CJ S T 730C..L S eries 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (s ) thJ-hs S teady S tate Value R = 0.073 K/ W (S ingle S ide Cooled) R = 0.031 K/ W (Double S ide Cooled) (DC Operation) thJ-hs thJ-hs S T 730C..L S eries T rans ient T hermal I mpedance Z (K /W) 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 12 5 ° C T j=-40 °C (2) (3) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) a) R ecommended l oad line for b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms F requency Limited by PG(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms R ectangular gate puls e Devic e: S T730C..L S eries (4) Fig. 11 - Gate Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

ST730C..L Series www.irf.com Bulletin I25191 rev. D 04/03 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04 /03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.