ST730CLPBF_12 VISHAY | Alldatasheet

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Document Number: 94414 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Hockey PUK Version), 990 A ST730CLPbF Series Vishay High Power Products

FEATURES

  • Center amplifying gate  Metal case with ceramic insulator  International standard ca se TO-200AC (B-PUK)  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 990 A TO-200AC (B-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 990 A Ths 55 °C IT(RMS) 2000 A Ths 25 °C ITSM

50 Hz 17 800

A

60 Hz 18 700

50 Hz 1591

60 Hz 1452

tq Typical 150 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST730C..L 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 990 (375) A 55 (85) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink temperature double side cooled 2000 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 17 800 t = 8.3 ms 18 700 t = 10 ms 100 % V RRM reapplied 15 000 t = 8.3 ms 15 700 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 1591 kA2s t = 8.3 ms 1452 t = 10 ms 100 % VRRM reapplied 1125 t = 8.3 ms 1027 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 15 910 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.98 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.12 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.32 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.27 Maximum on-state voltage V TM Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 150 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA

Document Number: 94414 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 ST730CLPbF Series Phase Control Thyristors (Hockey PUK Version), 990 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10.0 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM TJ = TJ maximum, tp ≤ 5 ms V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units

12 V anode to cathode applied

mATJ = 25 °C 100 200 TJ = 125 °C 50 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.5 - VTJ = 25 °C 1.8 3.0 TJ = 125 °C 1.1 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.073 K/W DC operation double side cooled 0.031 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.011 DC operation double side cooled 0.006 Mounting force, ± 10 % 14 700 (1500) N (kg) Approximate weight 255 g Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 TJ = TJ maximum K/W 120° 0.011 0.011 0.010 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036

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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics 100 110 120 130 0 1 0 02 0 03 0 04 0 05 0 06 0 07 0 0 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Al lowable Heats ink T emperature (°C) ST7 3 0 C . . L Se r i e s (S ingle S ide Cooled) R (DC) = 0.073 K/W thJ-hs 100 110 120 130 02 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Period Maximum Allowable H eats ink T emperature (°C) S T 730C..L S eries (S ingle S ide Cooled) R (DC) = 0.073 K/ W thJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 1400 30° 60° 90° 120° 180° Conduction Angle Maximum Allowable H eats ink T emperature (°C) ST7 3 0 C . . L Se r i e s (Double S ide Cooled) R (DC) = 0.031 K/W thJ-hs 100 110 120 130 0 400 800 1200 1600 2000 2400 DC 30° 60° 90° 120° 180° Avera g e On-sta te Current (A) Conduction P eriod Maximum Allowable Heats ink T emperature (°C) ST7 3 0 C . . L Se r i e s (Double S ide Cooled) R (DC) = 0.031 K/W thJ-hs 500 1000 1500 2000 2500 0 200 400 600 800 1000 1200 1400 180° 120° 90° 60° 30° RM S Li m i t Conduction Angle Maximum Average On-s tate P ower L os s (W ) Average On-s tate Current (A) S T 730C..L Series T = 125°C J 500 1000 1500 2000 2500 3000 3500 0 400 800 1200 1600 2000 2400 DC 180° 120° 90° 60° 30° RM S Lim i t Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-state Current (A) S T 730C..L S eries T = 1 2 5 ° C J

Document Number: 94414 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 ST730CLPbF Series Phase Control Thyristors (Hockey PUK Version), 990 A Vishay High Power Products Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) Peak Ha lf S ine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST7 3 0 C . . L Se r i e s At Any R ated L oad Condition And With R ated V Applied F ollowing S urge. RRM 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 0.01 0.1 1 P uls e T rain Duration (s ) Versus Pulse T ra in Dura tion. Control P eak H alf S ine Wave On-s tate Current (A) Initial T = 125°C No Voltage R eapplied Ra t e d V Re a p p l i e d RRM J ST7 3 0 C . . L Se r i e s Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained. 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 T = 2 5 ° C J Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T = 125°C J ST7 3 0 C . . L Se r i e s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) thJ-hs S teady S tate Value R = 0.073 K/ W (S ingle S ide Cooled) R = 0.031 K/ W (Double S ide Cooled) (DC Operation) thJ-hs thJ-hs ST7 3 0 C . . L Se r i e s T rans ient T hermal I mpedance Z (K /W)

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6 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 12 5 ° C Tj = - 4 0 ° C (2) (3) Ins tantaneous Gate Current (A) In st a n t a n e o us G a t e Vo lt a g e ( V) a) R ecommended l oad line for b) R ecommended l oad l ine for <=30% rated di/ dt : 10V, 10ohms Fre q u e n c y Lim it e d b y PG ( A V ) rated di/dt : 20V, 10ohms ; tr<=1 µs tr<=1 µs (1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms R ectangular gate puls e Device: S T 730C..L S eries (4) - Thyristor - Essential part number - 0 = Converter grade - C = Ceramic PUK - Voltage code x 100 = V RRM (see Voltage Ratings table) - L = PUK case TO-200AC (B-PUK) - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) - Lead (Pb)-free - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) Device code 51 324 6789 ST 73 0 C 20 L 1 - PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076

Document Number: 95076 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 01-Aug-07 1 TO-200AC (B-PUK) Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) Pin receptacle AMP. 60598-1 2 places 53 (2.09) DIA. MAX. 58.5 (2.3) DIA. MAX. 4.7 (0.18) 27 (1.06) MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 36.5 (1.44) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) 20° ± 5°

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