ST700C IRF | Alldatasheet

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Metal case with ceramic insulator International standard case TO-200AC (B-PUK) Typical Applications DC motor control Controlled DC power supplies AC controllers IT(AV) 910 A @ Ths 55 °C IT(RMS) 1857 A @ Ths 25 °C ITSM @ 50Hz 15700 A @ 60Hz 16400 A I2t@ 50Hz 1232 KA 2s @ 60Hz 1125 KA 2s VDRM/VRRM 1200 to 2000 V tq typical 150 µs TJ - 40 to 125 °C Parameters ST700C..L Units Major Ratings and Characteristics case style TO-200AC (B-PUK)

ST700C..L Series www.irf.com Bulletin I25190 rev. D 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /VRRM , max. repetitive V RSM , maximum non- I DRM/IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 12 1200 1300 16 1600 1700 ST700C..L 18 1800 1900 80 20 2000 2100 IT(AV) Max. average on-state current 910 (355) A 180 ° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1857 DC @ 25 °C heatsink temperature double side cooled ITSM Max. peak, one-cycle 15700 t = 10ms No voltage non-repetitive surge current 16400 A t = 8.3ms reapplied 13200 t = 10ms 100% V RRM 13800 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 1232 t = 10ms No voltage Initial T J = TJ max. 1125 t = 8.3ms reapplied 871 t = 10ms 100% V RRM 795 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 12321 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) 1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.80 V I pk= 2000A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 1.00 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.40 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.35 (I > π x IT(AV)),TJ = TJ max. Parameter ST700C..L Units Conditions 1.13 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA TJ = 25 °C, anode supply 12V resistive load

ST700C..L Series www.irf.com Bulletin I25190 rev. D 04/00 di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 750A, TJ = TJ max, di/dt = 60A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Parameter ST700C..L Units Conditions Switching

1000 A/µs

td Typical delay time 1.0 tq Typical turn-off time 150 µs dv/dt Maximum critical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current Blocking 500 V/ µsT J = TJ max. linear to 80% rated V DRM Parameter ST700C..L Units Conditions 80 mA T J = TJ max, rated VDRM/VRRM applied PGM Maximum peak gate power 10.0 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage TJ = - 40°C mA T J = 25°C TJ = 125°C TJ = - 40°C VT J = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST700C..L Units Conditions 5.0 Triggering TYP. MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - VGD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedV GT DC gate voltage required to trigger IGT DC gate current required to trigger W V TJ = TJ max, tp ≤ 5ms

ST700C..L Series www.irf.com Bulletin I25190 rev. D 04/00 TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.006 DC operation double side cooled F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Parameter ST700C..L Units Conditions K/W Case style TO - 200AC (B-PUK) See Outline Table K/W Thermal and Mechanical Specification Single Side Double Side Single Side Double Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Ordering Information Table Device Code 51 2 3 4 ST 70 0 C 20 L 1 76 8

ST700C..L Series www.irf.com Bulletin I25190 rev. D 04/00 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 100 200 300 400 500 600 700 30° 60° 90° 120° 180° Average O n-state C urren t (A) Conduc tion Angle Ma x i mu m A l l owa b l e H ea t s i n k Te mp e r a t u r e ( ° C) ST700C ..L Series (Si n gle Si de C ooled) R (D C ) = 0.073 K/WthJ-hs 100 110 120 130 0 200 400 600 800 1000 DC 30 ° 60 ° 90 ° 120 ° 180 ° Aver age On-s t ate Cur r ent (A) Conducti on Per iod Maxi m um All owable Heatsi nk Tem perature ( °C) ST700C ..L Seri es (S in g le Sid e C o o le d ) R (D C ) = 0.073 K/WthJ-hs Outline Table TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 58 .5 (2.3 ) D IA. M AX . 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 4.7 (0.18) 27 (1.06) M AX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 36.5 (1.44) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. Case Style TO-200AC (B-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)

ST700C..L Series www.irf.com Bulletin I25190 rev. D 04/00 Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 100 110 120 130 0 400 800 1200 1600 2000 DC 30 ° 60 ° 90 ° 120 ° 180 ° Average On -state C urrent (A) Conduction Peri od Maximum All owabl e Heat sink Temperat ure ( ° C) ST700C ..L Series (Dou bl e Si de Cool ed) R (DC ) = 0.031 K/WthJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 30 ° 60 ° 90 ° 120 ° 180 ° Average On-state Current (A) Conduction Angle Maximum All owable Heatsink Temperature ( °C) ST700C..L Series (Double Side Cooled) R (DC) = 0.031 K/WthJ-hs 400 800 1200 1600 2000 2400 2800 0 200 400 600 800 1000 1200 180° 120° 90° 60° 30° RMS Limit Conduc ti on Angle Maxi mu m A verage On- st ate Po wer Loss (W) Average On-state Current (A) ST700C..L Series T = 125 °CJ 500 1000 1500 2000 2500 3000 3500 0 400 800 1200 1600 2000 DC 180° 120° 90° 60° 30° RMS Limit Conducti on Peri od Maximum Average On-s tate Power Loss (W) Avera ge On-state Current (A) ST700C..L Series T = 125 °CJ 6000 7000 8000 9000 10000 11000 12000 13000 14000 1 10 100 Number Of Equal Ampl itude Hal f Cycl e Current Puls es (N) Peak Hal f Si ne Wave On- stat e Current (A) In it ia l T = 1 2 5° C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST700C ..L Series At Any Rated Load Condi t i on And Wi th Rated V Appli ed Fol lowing Surge.RRM 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 0.01 0.1 1 P u lse T ra in D u ra tio n (s) Ve rsus Pulse Train D uration. Co ntro l Of Conduction May Not Be M ai ntained. Pe ak Hal f S i ne Wav e On- s t at e Cu rr ent ( A ) In it ia l T = 1 2 5° C No V oltage Re applied Rated V ReappliedRRM J ST7 00C ..L Se rie s M axim um N on Re petitiv e Surge Curre nt

ST700C..L Series www.irf.com Bulletin I25190 rev. D 04/00 Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z thJ-hs Characteristics Fig. 11 - Gate Characteristics 100 1000 10000 0 . 511 . 522 . 533 . 54 T = 25 ° CJ Instantaneous O n-state Cur rent (A) In stan tane ous On-state Vo ltage (V ) T = 125 °CJ ST700C.. L Series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Square W ave Pulse D uratio n (s) thJ-hs Steady State V alue R = 0.073 K/W (Si n gle Side Cooled) R = 0.031 K/W (Double Side Cooled) (DC Operation) ST700C ..L Seri es thJ-hs thJ-hs Transien t Th erm al I m pedan ce Z (K/W) 0.1 100 0.001 0.01 0.1 1 10 100 VGD IG D (b) (a) Tj=25 °C Tj=125 °C Tj=-40 °C (2) (3) Instantane ous Gate Curren t (A) Instantaneous G ate Voltage (V) a) Recommended l oad li ne for b) Re co m m e nde d load line for <=30% rated di /dt : 10V, 10ohm s Fre quenc y Lim ite d by PG (AV) rated di/dt : 20V, 10ohm s; tr<=1 µs tr<=1 µs (1) (1) PGM = 10W , tp = 4m s (2) PGM = 20W , tp = 2m s (3) PGM = 40W , tp = 1m s (4) PG M = 60W , tp = 0.66ms Rectangu lar gate pu lse Devi ce: ST700C..L Series (4)