ST60-40MF SHINDENGEN | Alldatasheet
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Power zener Diode Power Surface Mount Device Single Zener Diode MCP Package ST60-40MF Wi OUTLINE Mi4$tEEd CHARACTERISTIC DIAGRAMS C : Unit AMY —SWMR - SED TRE Voe-T) #8 IeoT] ABE 1 50 10 : Sy z 9 _ z 40V 6000W i ee = Dal “BWISR A 2 3 | 2 Lat 5 i ‘ g g 3 Pail £ -HRE _ op ITS 5 sa oer Em) a + BRA HPT AE io ie a g a [o.1} a £ 16 2 a eu ‘TYP aq |* TYP “ TYP . a ‘TI=25°C Pulse Test Pulse Test SW Class 10/1000 us Ib=ImA Va=32V + SMD Package 001 nana Ey 1 [ . , a cc 020 2-75 100 13160 0% 3075100105 —To0 + Available for automotive use ® @ Clamping Voltage Ve IV] Junction Temperature Tj ["C] Junction Temperature Tj [°C] ATER OV CAAT IEMD IIA bE CPR BEI) &e CBA SVS, PRAT RARIC OV CHIRAL ERS HERE FA For details of outline dimensions, refer to our web site or the {pS E Semiconductor Short Form Catalog. As for the marking, refer to Peek San eee CILE the specification “Marking, Terminal Connection. ” 1000; MRR RATINGS 3 @M@HRAEH Absolute Maximum Ratings (#72094 T1=250/unless otherwise specified) 5 A fay A tt Welle Tite g Item Symbol Conditions Ratings Unit $ 100 -—~_ TRAP , & ~ Storage temperature Tg ~40~150 c & 10/1000 ;.6 JERR) H&L a yas Maximum surge reverse current IRSM [07100005 39h HEL OF exponential wave 10/1000 us FEHR 9 i L Vi saan —o38m) Pes 6000 Ww Pale With ip Maximin surge reverse power 107100005 JER EL 3000 TERED, ; [itis sites rt mor | BP |W ide NFEE y ea 0” aC @B AH ARIE Electical Characteristics (Him #2v 44 T1=25/unless otherwise specified) SA HE lel LAB wy 36-6 FBR AEE elma, 7 ARE ; Breakdown voltage VBR | ti=int) Pulse measurement TYP. 40.0 Vv MAX. 44.0 Bae 32V, 7b AE WK. 5.0 NOI NE 1308, 7 AWE 7 MAK. 1.3 [Fini woitisine me | a %*Sine wavelS50iz CHE LTE T + ERAS D RHEL —MMUIC ST AHO THY EF Typicalldicathyte RA #2 LTWEF *%*Semiconductor products generally have characterristic variation. Typical a statistical average of the devices ability.