ST5771 FAIRCHILD | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Discrete POWER & Signal Technologies PNP Switching Transistor ST5771-1 This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units ST5771-1 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W C B E TO-92 1997 Fairchild Semiconductor Corporation
(continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 15 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µ A, IC = 0 4.5 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA1 5 V ICBO Collector Cutoff Current V CB = 8.0 V, IE = 0 10 nA ICES Collector Cutoff Current V CE = 8.0 V, IE = 0 VCE = 8.0 V, IE = 0, TA = 125 0C 5.0 nA µ A IEBO Emitter Cutoff Current V EB = 4.5 V, IC = 0 1.0 µ A ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance V CB = 5.0 V, f = 1.0 MHz 3.0 pF Ceb Emitter-Base Capacitance V EB = 0.5 V, f = 1.0 MHz 3.5 pF hfe Small-Signal Current Gain I C = 10 mA, VCE = 10 V, f = 100 MHz 7.0 SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ts Storage Time V CC = 3.0 V IC = IB1 = IB2 = 1.0 mA 20 ns ton Turn-on Time V CC = 1.5 V, IC = 10 mA, 15 ns td Delay Time I B1 = 1.0 mA 10 ns tr Rise Time 15 ns toff Turn-off Time V CC = 1.5 V, IC = 10 mA 20 ns ts Storage Time I B1 = IB2 = 1.0 mA 20 ns tf Fall Time 10 ns hFE DC Current Gain I C = 10 mA, VCE = 0.3 V IC = 10 mA, VCE = 0.3 V, TA = - 55 °C IC = 1.0 mA, VCE = 0.5 V IC = 50 mA, VCE = 1.0 V 150 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.15 0.18 0.6 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.8 0.8 0.95 1.5 V V V