ST4G3234

ST4G3234 STMICROELECTRONICS | Alldatasheet

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I HIGH SPEED: tPD = 4.4ns (MAX.) at TA=85°C VCCB = 1.65V; VCCA = 3.0V I LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C I SYMMETRICAL OUTPUT IMPEDANCE: |IOHA| = IOLA = 10mA MIN at VCCA = 3.0V; VCCB = 1.4V to 3.6V |IOHA| = IOLA = 8mA MIN at VCCA = 2.3V; VCCB = 1.4 to 3.6V) I BALANCED PROPAGATION DELAYS: t PLH ≅ tPHL I POWER DOWN PROTECTION ON INPUTS AND OUTPUTS I 26Ω SERIES RESISTOR ON A SIDE OUTPUTS I OPERATING VOLTAGE RANGE: VCCA(OPR) = 1.4V to 3.6V (1.2V Data Retent) VCCB(OPR) = 1.4V to 3.6V (1.2V Data Retent) I MAX DATA RATES: 380 Mbps (1.8V to 3.3V translation) 260 Mbps (<1.8V to 3.3V translation) 260 Mbps (Translate to 2.5V) 210 Mbps (Translate to 1.5V) 100 Mbps (Translate to 1.2V) I LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) I ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V I ROHS Compliant for FLIPCHIP Package

DESCRIPTION

The ST4G3234 is a dual supply low voltage CMOS 4-BIT BUS BUFFER level translator fabricated with sub-micron silicon gate and five-layer metal wiring C 2MOS technology. Designed for use as an interface between a 3.3V bus and a 2.5V or 1.8V bus in a mixed 3.3V/1.8V, systems, it achieves high speed operation while maintaining the CMOS low power dissipation. This IC is intended for one-way asynchronous communication between data buses. The input and output power down protections disable the device when both power supply are down, so that the buses are effectively isolated. The input tolerant buffers allow to translate V CCB compatible signals and greater signals than V CCB up/down to VCCA. All inputs are equipped with protection circuits against static discharge, giving them ESD immuni- ty and transient excess voltage. ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR Table 1: Order Codes PACKAGE T & R Comments FLIPCHIP11 ST4G3234BJR 5000 parts per reel FLIPCHIP Figure 1: Logic Diagram Rev. 7

Table 3: Truth Table Table 4: Absolute Maximum Ratings Absolute Maximum Ratings are those value beyond which damage to the device may occur. Functional operation under these conditio ns is not implied Table 5: Recommended Operating Conditions 1) VI from 0.8V to 2.0V at VCC = 3.0V INPUTS Bn (VCCB Referred) OUTPUTS Bn (V CCA Referred) LL HH Symbol Parameter Value Unit VCCA Output Supply Voltage -0.5 to +4.6 V VCCB Input Supply Voltage -0.5 to +4.6 V VOA DC Output Voltage (Power Down Mode: VCCA=VCCB=Gnd) -0.5 to +4.6 V VIB DC Input Voltage (Power Down Mode: VCCA=VCCB=Gnd) -0.5 to +4.6 V VOA DC Output Voltage -0.5 to V CCA + 0.5 V VIB DC Input Voltage -0.5 to +4.6 V IIK DC Input Diode Current − 20 mA IOK DC Output Diode Current − 50 mA IOA DC Output Current ± 50 mA ICCA DC VCCA or Ground Current ± 100 mA ICCB DC VCCB or Ground Current ± 100 mA Pd Power Dissipation 400 mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 260 °C Symbol Parameter Value Unit VCCA Supply Voltage 1.4 to 3.6 V VCCB Supply Voltage 1.4 to 3.6 V VIB Input Voltage (Bn) 0 to V CCB V VOA Output Voltage (An) 0 to V CCA V Top Operating Temperature -40 to 85 °C dt/dv Input Rise and Fall Time (note 1) V CCB = 3.0 to 3.6V 0 to 10 ns/V VCCB = 2.3 to 2.7V 0 to 20 ns/V VCCB = 1.4 to 1.95V 0 to 100 ns/V

Table 6: DC Specification Symbol Parameter Test Condition Value UnitVCCB (V)(*) VCCA (V)(*) TA = 25 °C -40 to 85 °C VIHB High Level Input Voltage (Bn) 1.4 1.4 to 3.6V 0.65VCCB 0.65VCCB V1.8 0.65VCCB 0.65VCCB 2.5 1.6 1.6 3.3 2.0 2.0 VILB Low Level Input Voltage (Bn) 1.4 1.4 to 3.6V 0.35VCCB 0.35VCCB V1.8 0.35VCCB 0.35VCCB 2.5 0.7 0.7 3.3 0.8 0.8 VOHA High Level Output Voltage 1.4 to 3.6V 1.4 I O=-100µA 1.2 1.2 V 2.75 I O=-10mA 2.2 2.2 1.65 IO=-6mA 1.4 1.4 VOLA Low Level Output Voltage 1.4 to 3.6V 1.4 I O=100µA 0.2 0.2 V 2.75 I O=10mA 0.55 0.55 2.3 IO=8mA 0.30 0.30 1.65 IO=6mA 0.25 0.25 1.4 IO=2mA 0.20 0.20 IIB Input Leakage Current 2.7 3.6 VIB =VCCB or GND ± 0.5 ± 5 µA 1.4 2.7 VIB =3.6V or GND ± 0.5 ± 5 µA IOFF Power Off Leakage Current 00 V IB=GND to 3.6V VOA=GND to 3.6V ± 1.0 ± 10 µA ICCtB Quiescent Supply Current 1.4 to 3.6V 1.4 to 3.6V VIB =VCCB or GND 0.5 5 µA ICCtA Quiescent Supply Current 1.4 to 3.6V 1.4 to 3.6V VIB =VCCB or GND 0.5 5 µA ∆ICCtB Maximum Quiescent Supply Current / Input (Bn) 2.7 3.6 V IB =VCCB - 0.6V VIB =VCCB or GND 0.75 mA 1.95 3.6 1.95 2.7

Table 7: Dynamic Switching Characteristics Table 8: AC Electrical Characteristics 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch- ing in the same direction, either HIGH or LOW (tOSLH = | tPLHm - tPLHn|, tOSHL = | tPHLm - tPHLn| 2) Parameter guaranteed by design Symbol Parameter Test Condition Value UnitVCCB (V) VCCA (V) TA = 25 °C -40 to 85 °C VOLPA Dynamic Low Level Quiet An Output 1.4 1.8 CL =30pF VIL =0V VIH =VCC 0.2 V1.4-1.8 2.5 0.25 1.8-2.5 3.3 0.35 VOLVA Dynamic Low Level Quiet An Output 1.4 1.8 CL =30pF VIL =0V VIH =VCC -0.2 V1.4-1.8 2.5 -0.25 1.8-2.5 3.3 -0.35 VOHVA Dynamic High Level Quiet An Output 1.4 1.8 CL =30pF VIL =0V VIH =VCC 1.6 V1.4-1.8 2.5 2.1 1.8-2.5 3.3 2.7 Symbol Parameter Test Condition Value UnitVCCB (V) VCCA (V) -40 to 85 °C Min. Max. tPLH tPHL Propagation Delay Time Bn to An 2.3 to 3.6 1.4 CL = 10 pF 2.0 5.5 ns t PLH tPHL Propagation Delay Time Bn to An 2.3 to 3.6 1.4 CL = 30 pF RL = 500 Ω 2.0 7.5 ns t OSLH tOSHL Output To Output Skew Time (note1, 2) 1.8 ± 0.15 2.5 ± 0.2 CL = 30 pF RL = 500 Ω 0.5 ns

Table 9: Capacitance Characteristics 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. I CC(opr) = CPD x VCC x fIN + ICC/4 (per circuit) Figure 4: Test Circuit CL = 30pF or equivalent (includes jig and probe capacitance) RL = R1 = 500Ω or equivalent RT = ZOUT of pulse generator (typically 50Ω) Table 10: Waveform Symbol Value Symbol Parameter Test Condition Value UnitVCCB (V) VCCA (V) TA = 25 °C -40 to 85 °C CINB Input Capacitance open open 7 pF CO Output Capacitance 2.5 3.3 9 pF CPD Power Dissipation Capacitance 2.5 3.3 f=10MHz 28 pF 1.8 3.3 28 1.4 2.5 25 1.4 1.8 21 3.3 1.8 28 TEST SWITCH t PLH, tPHL Open Symbol VCC VIH VCC VCC VCC VM 1.5V V CC/2 V CC/2 VX VOL +0.3V V OL +0.15V V OL +0.15V VY VOL -0.3V V OL -0.15V V OL -0.15V

DIM. mm. mils A2 0.40 15.7 D1 1.5 59.1 E1 0.866 34.1 fD 0.270 10.6 fE 0.272 10.7 ccc 0.080 3.1 Flip-Chip11 MECHANICAL DATA 7224724E

DIM. mm. inch A 178 6.926 C 12.8 13.2 0.504 0.519 D 20.2 0.795 N 49 50 51 1.929 1.969 2.008 T 12.4 0.488 Tape & Reel Flip-Chip 11 MECHANICAL DATA

Table 11: Revision History Date Revision Description of Changes 14-Oct-2004 1 First Release. 26-Oct-2004 2 Mechanical Data has been updated. 18-Nov-2004 3 Mistake VOHA on table 6. 11-Feb-2005 4 Add Tape & Reel and Figure 6. 18-Feb-2005 5 Table 1 has been updated from 4000 to 5000 parts per Reel. 18-Mar-2005 6 Add Features ==> Max Data Rates. 09-May-2005 7 Table 8 and Table 9 have been updated.

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