SD1731-14 STMICROELECTRONICS | Alldatasheet
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RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .500 4L FL (M 174) epoxy sealed .OPTIMIZED FOR SSB .30 MHz .50 VOLTS .EFFICIENCY 40% .COMMON EMITTER .GOLD METALLIZATION .POUT = 250 W PEP WITH 12 dB GAIN
DESCRIPTION
The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communica- tions. This device utilizes emitter ballasting for im- proved ruggedness and reliability. PIN CONNECTION BRANDING ST448 ORDER CODE SD1731-14 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 20 A PDISS Power Dissipation (Theatsink≤ 25°C) 257 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 0.48 °C/W R TH(c-s) Case-Heatsink Thermal Resistance 0.2 °C/W SD1731-14 (ST448) 1. Collector 3. Base 2. Emitter 4. Emitter THERMAL DATA Se pte mber 6, 1 99 6
Symbol Test Condi ti ons Va lue Unit Min. Typ. Ma x. POUT f = 30 M Hz V CC = 50 V I CQ = 150 mA 250 — — W G P* P OUT = 250 W PEP V CC = 50 V I CQ = 150 mA 12 — — dB IMD* P OUT = 250 W PEP V CC = 50 V I CQ = 150 mA —— −30 dBc η c* P OUT = 250 W PEP V CC = 50 V I CQ = 150 mA 40 45 — % C OB f = 1 MHz V CB = 50 V —2 7 0— p f Note: *f 1 = 30.00 MHz, f2 = 30.001 MHz STATIC (Tcase = 25°C) Symbol Test Condi ti ons Va lue Unit Min. Typ . Ma x. BV CBO IC = 200 mA I E = 0m A 110 — — V BV CEO IC = 200 mA I B = 0m A 55 — — V BV EBO IE = 20 mA I C = 0m A 4.0 — — V ICEO V CE = 30 V I B = 0m A ——5 m A ICES V CE = 55 V V BE = 0V — — 10 mA hFE V CE = 6V I C = 10 A 5 — 20 — DYNAMIC (T heatsink= 25°C) SD1731-14 (ST448)
C1 : Arco 426 + 220pF + 330pF Chips C2 : 2 x 10nF Chips C3 : Arco 4615 + 2.2nF + 2 x 1nF LCC + 4.7nF + 560pf Chps C4 : Arco 4213 + 330pF Chip C5 : 10nF Chip C6 : 3 x 10nF Chips C7, C8, C9, C10, C11 :1nF + 10nF + 100nF + 4.7 µF, 63V + 100µF, 63V L1 : 3 Turns of 1.2mm Unenameled Wire Diameter, 7.1mm, Length 13mm L2, L3 :8 Turns of 0.55mm Enameled Wire on Ferrite Core Phillips 4C6 97170 (9 x 6 x 3) L4 : 10 Turns of 1.2mm Enameled Wire, Diameter 8.1mm, Length 20mm L5 : 7 Turns of 1.2mm Enameled Wire on Ferrite Core Phillips 4C6 97180 T1 : 6:3.5 Impedance Transformer on toriod Phillips 4C6 97180 T2 : Twisted Pair 4:1 Transformer, 4 Turns Made with 1.0mm Enameled on toriod Phillips 4C6 97180 T3 : Feedback Transformer Primary: 2 Turns of 1mm Enameled Wire Secondary: 8 Turns of 1mm Enameled Wire T4 : Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted 1.2mm Wires on Ferrite Core Phillips 4C6 97200 SD1731-14 (ST448)
SD1731-14 (ST448)
Ref.: Dwg. No.12-0174 UDCS No. 1011000 rev. C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. SD1731-14 (ST448)