ST380CPBF

ST380CPBF VISHAY | Alldatasheet

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Document Number: 94410 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Hockey PUK Version), 960 A ST380CPbF Series Vishay High Power Products

FEATURES

• Center amplifying gate  Metal case with ceramic insulator  International standard case TO-200AB (E-PUK)  Low profile hockey PUK to increase current-carrying capability  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 960 A TO-200AB (E-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 960 A Ths 55 °C IT(RMS) 1900 A Ths 25 °C ITSM

50 Hz 15 000

A

60 Hz 15 700

50 Hz 1130

60 Hz 1030

tq Typical 100 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST380C..C 04 400 500 50 06 600 700

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 960 (440) A 55 (75) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink temperature double side cooled 1900 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 15 000 t = 8.3 ms 15 700 t = 10 ms 100 % V RRM reapplied 12 600 t = 8.3 ms 13 200 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 1130 kA2s t = 8.3 ms 1030 t = 10 ms 100 % VRRM reapplied 800 t = 8.3 ms 725 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 11 300 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.85 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.25 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.24 Maximum on-state voltage V TM Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.60 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA

Document Number: 94410 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 ST380CPbF Series Phase Control Thyristors (Hockey PUK Version), 960 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10.0 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM TJ = TJ maximum, tp ≤ 5 ms V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units

12 V anode to cathode applied

J = 25 °C 100 200 TJ = 125 °C 50 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.5 - VTJ = 25 °C 1.8 3.0 TJ = 125 °C 1.1 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.09 K/W DC operation double side cooled 0.04 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.02 DC operation double side cooled 0.01 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 83 g Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 TJ = TJ maximum K/W 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037

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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics 100 110 120 130 0 100 200 300 400 500 600 700 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) ST3 8 0 C . . C Se r i e s (S ingle S ide Cooled) R (DC) = 0.09 K/ W thJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maximum Allowable Heats ink T emperature (°C) S T 380C..C S eries (S ingle S ide Cooled) R (DC) = 0.09 K/ W thJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 1400 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) ST3 8 0C . . C Se r i e s (Double S ide Cooled) R (DC) = 0.04 K/W thJ-hs 100 110 120 130 0 400 800 1200 1600 2000 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maximum Allowable H eats ink T emperature (°C) ST3 8 0 C . . C Se r i e s (Double S ide Cooled) R (DC) = 0.04 K/W thJ-hs 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 180° 120° 90° 60° 30° RM S Li m i t Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) ST3 8 0 C . . C Se r i e s T = 1 2 5 ° C J 400 800 1200 1600 2000 2400 2800 0 400 800 1200 1600 2000 DC 180° 120° 90° 60° 30° RM S Lim i t Conduction Period Maximum Average On-state P ower L os s (W) Average On-s tate Current (A) S T 380C..C S eries T = 125° C J

Document Number: 94410 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 ST380CPbF Series Phase Control Thyristors (Hockey PUK Version), 960 A Vishay High Power Products Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 6000 7000 8000 9000 10000 11000 12000 13000 14000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Peak Ha lf S ine Wave On-state Current (A) Initial T = 125°C @ 6 0 Hz 0 . 0 0 8 3 s @ 50 Hz 0.0100 s J S T 380C..C S eries At Any R ated L oad Condition And With R ated V Applied F ollowing S urge. RRM 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 0.01 0.1 1 Pulse Tra in Dura t io n ( s) Maximum Non R epetitive S urge Current Vers us Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Pe a k Ha lf Sin e Wa v e O n -st a t e C u rre n t ( A) Initial T = 125°C No Volta ge Rea pplied Ra t e d V Re a p p l i e d RRM J ST3 8 0 C . . C Se r i e s 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 T = 2 5 ° C J I ns tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T = 125°C J ST3 8 0 C . . C Se r i e s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Puls e Duration (s ) thJ-hs ST3 8 0 C . . C Se r i e s St e a d y St a t e V a l u e R = 0.09 K/ W (S ingle S ide Cooled) R = 0.04 K/ W (Doubl e S i de Cooled) (DC Operation) thJ-hs thJ-hs T ransient T hermal Impedance Z (K/ W)

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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj=25 °C Tj = 12 5 ° C Tj = - 4 0 ° C (2) (3) Ins tantaneous Gate Current (A) In st a n t a n e o us G a t e Vo lt a g e ( V) a) R ecommended load line for b) R ecommended load line for <=30% rated di/dt : 10V, 10ohms F requency L imited by P G(AV) rated di/dt : 20V, 10ohms ; tr<=1 µs tr<=1 µs (1) (1) P GM = 10W, tp = 4ms (2) P GM = 20W, tp = 2ms (3) P GM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms R ectangular gate puls e Device: S T 380C..C S eries (4) - Thyristor - Essential part number - 0 = Converter grade - C = Ceramic PUK - Voltage code x 100 = V RRM (see Voltage Ratings table) - C = PUK case TO-200AB (E-PUK) - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) - Lead (Pb)-free - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) Device code 51 324 6789 ST 38 0 C 06 C 1 - PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.