ST380CHPBF_12 VISHAY | Alldatasheet

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Document Number: 94411 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Hockey PUK Version), 960 A ST380CHPbF Series Vishay High Power Products

FEATURES

  • Center amplifying gate  Metal case with ceramic insulator  International standard case TO-200AB (E-PUK)  Extended temperature range  Low profile hockey PUK to increase current-carrying capability  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 960 A TO-200AB (E-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 960 A Ths 80 °C IT(RMS) 2220 A Ths 25 °C ITSM

50 Hz 12 500

A

60 Hz 13 000

50 Hz 782

60 Hz 713

tq Typical 100 µs TJ - 40 to 150 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST380CH..C 04 400 500 100 06 600 700

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 960 (440) A 80 (110) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink temperature double side cooled 2220 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 12 500 t = 8.3 ms 13 000 t = 10 ms 100 % V RRM reapplied 10 500 t = 8.3 ms 11 000 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 782 kA2s t = 8.3 ms 713 t = 10 ms 100 % VRRM reapplied 553 t = 8.3 ms 505 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 7820 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.85 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.25 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.24 Maximum on-state voltage V TM Ipk = 2900 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.58 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA

Document Number: 94411 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 ST380CHPbF Series Phase Control Thyristors (Hockey PUK Version), 960 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10.0 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM TJ = TJ maximum, tp ≤ 5 ms V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units

12 V anode to cathode applied

J = 25 °C 100 200 TJ = 150 °C 40 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.5 - VTJ = 25 °C 1.8 3.0 TJ = 150 °C 1.0 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 150 °C Maximum storage temperature range T Stg Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.09 K/W DC operation double side cooled 0.04 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.02 DC operation double side cooled 0.01 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 83 g Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 TJ = TJ maximum K/W 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037

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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics 100 110 120 130 140 150 0 100 200 300 400 500 600 700 800 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) S T 380CH..C S eries (S ingle S ide Cooled) R (DC) = 0.09 K/ W thJ-hs 100 110 120 130 140 150 0 200 400 600 800 1000 1200 1400 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Period Maximum Allowable H eats ink T emperature (°C) ST3 8 0 C H. . C Se r i e s (S ingle S ide Cooled) R (DC) = 0.09 K/W thJ-hs 100 110 120 130 140 150 04 0 0 8 0 0 1 2 0 0 1 6 0 0 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) S T 380CH..C S eries (Double S ide Cooled) R (DC) = 0.04 K/ W thJ-hs 100 110 120 130 140 150 0 500 1000 1500 2000 2500 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maxi mum Al lowabl e H eats i nk T emperature (°C S T 380CH..C S eries (Double S ide Cooled) R (DC) = 0.04 K/W thJ-hs 500 1000 1500 2000 2500 0 400 800 1200 1600 180° 120° 90° 60° 30° RM S Li m it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) S T 380CH ..C S eries T = 150°C J 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 DC 180° 120° 90° 60° 30° RM S Li m it Conduction Period Maximum Average On-s tate P ower L os s (W ) Average On-s tate Current (A) S T 380CH..C S eries T = 150°C J

Document Number: 94411 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 ST380CHPbF Series Phase Control Thyristors (Hockey PUK Version), 960 A Vishay High Power Products Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 5000 6000 7000 8000 9000 10000 11000 12000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) Peak Half S ine Wave On-s tate Current (A) ST3 8 0 C H. . C Se r i e s Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any R ated Load Condition And With R ated V Applied Following S urge. RRM 5000 6000 7000 8000 9000 10000 11000 12000 13000 0.01 0.1 1 Pulse Tra in Dura t io n (s) Vers us P uls e T rain Duration. Control P eak H alf S ine Wave On-s tate Current (A) Initial T = 150°C No Voltage Reapplied Ra t e d V Re a p p li e d RRM J S T 380CH..C S eries Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained. 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 T = 2 5 ° C J Instantaneous On-state Current (A) Ins tantaneous On-s tate Voltage (V) S T 380CH..C S eries T = 150°C J 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (s ) thJ-hs S teady S tate Val ue R = 0.09 K/ W (S ingle S ide Cooled) R = 0.04 K/ W (Double S ide Cooled) (DC Operation) thJ-hs thJ-hs S T 380CH..C S eries T rans ient T hermal I mpedance Z (K /W)

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6 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj=25 °C Tj = - 4 0 ° C (2) (3) Ins tantaneous Gate Current (A) Instantaneous Gate Voltage (V) a) R ecommended load l ine for b) R ecommended load l ine for <=30% ra ted d i/ dt : 10V, 10ohms Fr e q u e n c y Lim i t e d b y PG ( A V ) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs Tj=150 °C Devic e: S T380CH..C S eries (1) P GM = 10W, tp = 4ms (2) P GM = 20W, tp = 2ms (3) P GM = 40W, tp = 1ms (4) P GM = 60W, tp = 0.66ms R ectangular gate pul s e (1) (4) - Thyristor - Essential part number - 0 = Converter grade - CH = Ceramic PUK, high temperature - Voltage code x 100 = V RRM (see Voltage Ratings table) - C = PUK case TO-200AB (E-PUK) - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) - Lead (Pb)-free - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) Device code 51 324 6789 ST 38 0 CH 06 C 1 - PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075

Document Number: 95075 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 01-Aug-07 1 TO-200AB (E-PUK) Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) MIN. 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 14.1/15.1 (0.56/0.59) 25° ± 5° 25.3 (0.99) 42 (1.65) MAX. Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Gate terminal for 1.47 (0.06) DIA. pin receptacle 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

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