ST380CHPBF

ST380CHPBF IRF | Alldatasheet

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Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability Extended temperature range Lead Free case style TO-200AB (E-PUK) 1www.irf.com

2 www.irf.com ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /VRRM , max. repetitive V RSM , maximum non- I DRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 04 400 500 06 600 700 IT(AV) Max. average on-state current 960 (440) A 180° conduction, half sine wave @ Heatsink temperature 80 (110) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 2220 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one-cycle 12500 t = 10ms No voltage non-repetitive surge current 13000 A t = 8.3ms reapplied 10500 t = 10ms 100% V RRM 11000 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 782 t = 10ms No voltage Initial T J = TJ max. 713 t = 8.3ms reapplied 553 t = 10ms 100% V RRM 505 t = 8.3ms rea pplied I2√t Maximum I 2√t for fusing 7820 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) 1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.58 V I pk= 2900A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.85 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.25 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.24 (I > π x IT(AV)),TJ = TJ max. Parameter ST380CH..C Units Conditions 0.88 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V m Ω mA T J = 25°C, anode supply 12V resistive load di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Parameter ST380CH..C Units Conditions Switching

1000 A/µs

td Typical delay time 1.0 tq Typical turn-off time 100 µs ST380CH..C 100

3www.irf.com dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/ μsT J = TJ max. linear to 80% rated VDRM Parameter ST380CH..C Units Conditions 100 mA T J = TJ max, rated V DRM/VRRM applied PGM Maximum peak gate power 10.0 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage GM Maximum peak negative gate voltage TJ = - 40°C mA T J = 25°C TJ = 150°C TJ = - 40°C VT J = 25°C TJ = 150°C IGD DC gate current not to trigger 10 mA Parameter ST380CH..C Units Conditions 5.0 Triggering TYP. MAX. 200 - 100 200 40 - 2.5 - 1.8 3.0 1.0 - VGD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedV GT DC gate voltage required to trigger IGT DC gate current required to trigger W VT J = TJ max, tp ≤ 5ms TJ Max. operating temperature range -40 to 150 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.09 DC operation single side cooled junction to heatsink 0.04 DC operation double side cooled RthC-hs Max. thermal resistance, 0.02 DC operation single side cooled case to heatsink 0.01 DC operation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Parameter ST380CH..C Units Conditions K/W Thermal and Mechanical Specification Case style TO - 200AB (E-PUK) See Outline Table K/W

4 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - CH = Ceramic Puk, High temperature 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) 9 - Lead Free ΔRthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Device Code 51 2 3 4 ST 38 0 CH 06 C 1 PbF 76 8 Single Side Double Side Single Side Double Side 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 K/W 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions Ordering Information Table

5www.irf.com Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 140 150 0 200 400 600 800 1000 1200 1400 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Period Maximum Allowable H eats ink T emperature (°C) S T 380CH..C S eries (S ingle S ide Cooled) R (DC) = 0.09 K/ WthJ-hs 100 110 120 130 140 150 0 100 200 300 400 500 600 700 800 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats i nk T emperature (°C) S T 380CH..C S eries (S ingle S ide Cooled) R (DC) = 0.09 K/WthJ-hs DIA. MAX. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) MIN. 0.3 (0.01) MIN. ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 14.1 / 15.1 (0.56 / 0.59) 25°± 5° GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 25.3 (0.99) 40.5 (1.59) DIA. MAX. DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 42 (1.65) MAX. Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)

6 www.irf.com Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 100 110 120 130 140 150 0 500 1000 1500 2000 2500 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Period Maximum Allowable Heats i nk T emperature (°C) S T 380CH..C S eries (Double S i de Cooled) R (DC) = 0.04 K/ WthJ-hs 100 110 120 130 140 150 0 400 800 1200 1600 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) ST3 8 0 C H. . C Se r i e s (Double S ide Cooled) R (DC) = 0.04 K/ W thJ-hs 500 1000 1500 2000 2500 0 400 800 1200 1600 180° 120° 90° 60° 30° RM S Li m it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) S T 380CH..C S eries T = 150°CJ 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 DC 180° 120° 90° 60° 30° RM S Li m it Conduction Period Maximum Average On-s tate P ower L os s (W ) Average On-s tate Current (A) S T 380CH..C S eries T = 150°CJ 5000 6000 7000 8000 9000 10000 11000 12000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) Peak Half S ine Wave On-s tate Current (A) S T 380CH..C S eries Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 5000 6000 7000 8000 9000 10000 11000 12000 13000 0.01 0.1 1 P uls e T rain Duration (s ) Vers us P uls e T rain Duration. Control P eak H alf S ine Wave On- s tate Cur rent (A) Initial T = 150°C No Voltage R eapplied R ated V R eappl iedRRM J S T 380CH..C S eries Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained.

7www.irf.com Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z thJ-hs Characteristics Fig. 11 - Gate Characteristics 100 1000 10000 0 . 511 . 522 . 533 . 5 T = 2 5 ° CJ Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) S T 380CH..C S eries T = 150°CJ 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) thJ-hs S teady S tate Val ue R = 0.09 K/ W (S ingle S ide Cooled) R = 0.04 K/ W (Double S ide Cooled) (DC Operation) thJ-hs thJ-hs S T 380CH..C S eries T rans ient T hermal I mpedance Z (K /W) 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj=25 °C Tj = - 4 0 ° C (2) (3) Ins tantaneous Gate Current (A) Ins tantaneous Gate Vol tage (V) a) R ecommended load l ine for b) R ecommended load l ine for <=30% ra ted d i/ dt : 10V, 10ohms F requency Limited by PG(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs Tj=150 °C Device: S T 380CH..C S eries (1) P GM = 10W, tp = 4ms (2) P GM = 20W, tp = 2ms (3) P GM = 40W, tp = 1ms (4) P GM = 60W, tp = 0.66ms R ectangular gate pul s e (1) (4)

8 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09 /06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.