ST380CH06C0 IRF | Alldatasheet

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Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability Extended temperature range case style TO-200AB (E-PUK)

ST380CH..C Series Bulletin I25169 rev. C 04/00 www.irf.com ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/VRRM, max. repetitive V RSM , maximum non- I DRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 04 400 500 06 600 700 IT(AV) Max. average on-state current 960 (440) A 180 ° conduction, half sine wave @ Heatsink temperature 80 (110) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 2220 DC @ 25 °C heatsink temperature double side cooled ITSM Max. peak, one-cycle 12500 t = 10ms No voltage non-repetitive surge current 13000 A t = 8.3ms reapplied 10500 t = 10ms 100% V RRM 11000 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 782 t = 10ms No voltage Initial T J = TJ max. 713 t = 8.3ms reapplied 553 t = 10ms 100% V RRM 505 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 7820 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) 1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.58 V I pk= 2900A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.85 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.25 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.24 (I > π x IT(AV)),TJ = TJ max. Parameter ST380CH..C Units Conditions 0.88 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA T J = 25 ° C, anode supply 12V resistive load di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Parameter ST380CH..C Units Conditions Switching

1000 A/µs

td Typical delay time 1.0 tq Typical turn-off time 100 µs ST380CH..C 100

ST380CH..C Series Bulletin I25169 rev. C 04/00 www.irf.com dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/ µsT J = TJ max. linear to 80% rated V DRM Parameter ST380CH..C Units Conditions 100 mA T J = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 10.0 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage TJ = - 40°C mA T J = 25°C TJ = 150°C TJ = - 40°C VT J = 25°C TJ = 150°C IGD DC gate current not to trigger 10 mA Parameter ST380CH..C Units Conditions 5.0 Triggering TYP. MAX. 200 - 100 200 40 - 2.5 - 1.8 3.0 1.0 - VGD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedV GT DC gate voltage required to trigger IGT DC gate current required to trigger W VT J = TJ max, tp ≤ 5ms TJ Max. operating temperature range -40 to 150 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.09 DC operation single side cooled junction to heatsink 0.04 DC operation double side cooled RthC-hs Max. thermal resistance, 0.02 DC operation single side cooled case to heatsink 0.01 DC operation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Parameter ST380CH..C Units Conditions K/W Thermal and Mechanical Specification Case style TO - 200AB (E-PUK) See Outline Table K/W

ST380CH..C Series Bulletin I25169 rev. C 04/00 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - CH = Ceramic Puk, High temperature 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Device Code 51 2 3 4 ST 38 0 CH 06 C 1 76 8 Single Side Double Side Single Side Double Side 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 K/W 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Sinusoidal conduction Rectangular conductionConduction angle Units Conditions Ordering Information Table

ST380CH..C Series Bulletin I25169 rev. C 04/00 www.irf.com Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 140 150 0 200 400 600 800 1000 1200 1400 DC 30° 60° 90° 120° 180° A ve rage O n -state C urre nt (A ) Conducti on Per i od Max i mum Al l owabl e Hea ts i nk Temper atu r e (° C) ST380C H..C Series (S i ngl e Si de Cool ed) R (D C) = 0.09 K/W thJ-hs 100 110 120 130 140 150 0 100 200 300 400 500 600 700 800 30 ° 60 ° 90 ° 120 ° 180 ° Average On-s tate Current (A) Conduction Angle Maximum Al low able Heatsi n k Tem perature ( °C) ST380CH..C Series (Single Side Cooled) R (D C ) = 0.09 K/WthJ-hs DIA. MAX. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) MIN. 0.3 (0.01) MIN. ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 14.1 / 15.1 (0.56 / 0.59) 25°± 5° GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 25.3 (0.99) 40.5 (1.59) DIA. MAX. DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 42 (1.65) MAX. Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)

ST380CH..C Series Bulletin I25169 rev. C 04/00 www.irf.com Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 100 110 120 130 140 150 0 500 1000 1500 2000 2500 DC 30 ° 60 ° 90 ° 120 ° 180 ° Average On-s tate Current (A) Conducti on Per io d Maximum Al lowabl e Heat si nk Tem perature ( ° C) ST380C H..C Series (Doubl e Si de C ool ed) R (D C) = 0.04 K/WthJ-hs 100 110 120 130 140 150 0 400 800 1200 1600 30° 60 ° 90° 120 ° 180 ° Average On-state Current (A) Conducti on Angl e Maximum Allowable Heatsink Temperature ( °C) ST380CH..C Series (Doubl e Si de Cooled) R (DC) = 0.04 K/WthJ-hs 500 1000 1500 2000 2500 0 400 800 1200 1600 180 ° 120 ° 90 ° 60 ° 30 ° RMS Limit Co nducti on Angle M axi m um Average O n-state Pow er Loss (W) Av erage O n-state C urre nt (A ) ST380CH. .C Seri es T = 150 °CJ 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 DC 180 ° 120 ° 90 ° 60 ° 30 ° RMS Limit Conduction Peri od M axim um Average On-st ate Po w er Loss (W) Av erage O n-state C urren t (A ) ST380C H..C Series T = 150 °CJ 5000 6000 7000 8000 9000 10000 11000 12000 11 0 1 0 0 Number Of Equal Ampli tude Half Cycl e Current Pulses (N) Peak Half Sine Wave On-state Current (A) ST380CH..C Series In itial T = 1 50°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge.RRM 5000 6000 7000 8000 9000 10000 11000 12000 13000 0.01 0.1 1 Puls e T rai n Durati on (s) V ersus Pulse Train D uratio n. C on trol Peak Hal f Si ne W ave O n-state Current (A) Initial T = 150 °C No Voltage Reappli ed Rated V Reapp liedRRM J ST380C H..C Series Maxi m um Non Repeti tive Surge Current Of Conducti on May Not Be Maintained.

ST380CH..C Series Bulletin I25169 rev. C 04/00 www.irf.com Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z thJ-hs Characteristics Fig. 11 - Gate Characteristics 100 1000 10000 0 . 511 . 522 . 533 . 5 T = 25 °CJ Instantaneous On-state Current (A) I nstantaneous On-state Voltage (V) ST380CH..C Series T = 150 °CJ 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse D uration (s) thJ-hs S te a dy St a t e V a lu e R = 0.09 K/W (Si ngl e Si de C ooled) R = 0.04 K/W (Double Side Cooled) (DC O peration) thJ -hs thJ -hs ST380C H..C Seri es Transient Therm al Impedance Z (K/W ) 0.1 100 0.001 0.01 0.1 1 10 100 VGD IG D (b ) (a) Tj=25 °C Tj=-40 °C (2) (3) Instantaneous G ate Current (A) Instant ane ous Gate V oltage (V ) a) Recom mended load l ine for b ) R e c o m m e n de d lo a d lin e fo r <=30% rated di/d t : 10V, 10ohm s Frequency Li m i ted by PG(AV) rated di/dt : 20V, 10ohm s; tr<=1 µs tr<=1 µs Tj=150 °C Device: ST380C H..C Ser ies (1) PGM = 10W, tp = 4m s (2) PGM = 20W, tp = 2m s (3) PGM = 40W, tp = 1m s (4) PGM = 60W, tp = 0.66ms R e c t a n g u la r g a t e pu lse (1) (4)