ST333SP VISHAY | Alldatasheet

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Document Number: 94377 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 1 Inverter Grade Thyristors (Stud Version), 330 A ST333SP Series Vishay High Power Products

FEATURES

  • Center amplifying gate  High surge current capability  Low thermal impedance  High speed performance  Compression bonding  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS I n v e r t e r s  Choppers  Induction heating  All types of force-commutated converters ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 330 A TO-209AE (TO-118) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 330 A TC 75 °C IT(RMS) 518 A ITSM

50 Hz 11 000

60 Hz 11 520

50 Hz 605

60 Hz 550

tq 15 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST333S 04 400 500 08 800 900

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2 Revision: 30-Apr-08

Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A CURRENT CARRYING CAPABILITY FREQUENCY UNITS

50 Hz 840 600 1280 1040 5430 4350

A

400 Hz 650 450 1280 910 2150 1560

1000 Hz 430 230 1090 730 1080 720

2500 Hz 140 60 490 250 400 190

V Voltage before turn-on VD VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Case temperature 50 75 50 75 50 75 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 330 A 75 °C Maximum RMS on-state current I T(RMS) DC at 63 °C case temperature 518 AMaximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 11 000 t = 8.3 ms 11 520 t = 10 ms 100 % VRRM reapplied 9250 t = 8.3 ms 9700 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 605 kA2s t = 8.3 ms 550 t = 10 ms 100 % VRRM reapplied 430 t = 8.3 ms 390 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA 2√s Maximum peak on-state voltage V TM ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 VLow level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.92 Low level value of forward slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58 mΩ High level value of forward slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current I H TJ = 25 °C, IT > 30 A 600 mA Typical latching current I L TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 180° el ITM 180° el ITM 100 µs ITM

Document Number: 94377 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 3 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A Vishay High Power Products SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt 1000 A/µs Typical delay time t d TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source 1.0 µs Maximum turn-off time t q TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt = 200 V/µs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM TJ = TJ maximum, f = 50 Hz, d% = 50 W Maximum average gate power P G(AV) 10 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 10 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 5 Maximum DC gate currrent required to trigger I GT TJ = 25 °C, VA = 12 V, Ra = 6 Ω 200 mA Maximum DC gate voltage required to trigger V GT 3V Maximum DC gate current not to trigger I GD TJ = TJ maximum, rated VDRM applied 20 mA Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to case R thJC DC operation 0.10 K/W Maximum thermal resistance, case to heatsink R thCS Mounting surface, smooth, flat and greased 0.03 Mounting torque, ± 10 % Non-lubricated threads 48.5 (425) N · m (lbf · in) Approximate weight 535 g Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

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Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A Note  The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTA NGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.011 0.008 TJ = TJ maximum K/W 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 100 110 120 130 0 50 100 150 200 250 300 350 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle S T 333S S eries R (DC) = 0.10 K/ W thJC 100 110 120 130 0 100 200 300 400 500 600 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction Period ST3 3 3 S Se r i e s R (DC) = 0.10 K/ W thJC 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R =0.01K -DeltaR thSA 0.03K/W 0.06K/W 0.08K/W 0.12K/W 0.16K/W 0.2K/W 0.3K/W

0.5 K/W

0 50 100 150 200 250 300 350 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) ST3 3 3 S Se r i e s T = 1 2 5 ° C J

Document Number: 94377 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 5 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A Vishay High Power Products Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitve Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R =0.01K/W -DeltaR thSA 0.03K/W 0.06K/W 0.12K/W 0.2K/W

0.3 K/W

180° 120° 90° 60° 30° RM S Lim i t Conduction Period Maximum Average On-s tate Power Los s (W) Average On-s tate Current (A) ST3 3 3 S Se r i e s T = 1 2 5 ° C J 4000 5000 6000 7000 8000 9000 10000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Pulses (N) Peak H alf S ine Wave On-s tate Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST3 3 3 S Se r i e s At Any R ated Load Condition And With R ated V Applied F ollowing S urge. RRM 4000 5000 6000 7000 8000 9000 10000 11000 0.01 0.1 1 Pulse Tra in Dura t ion (s) Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Peak Half S ine Wave On-s tate Current (A) Initial T = 125°C No Voltage Reapplied RRM J ST3 3 3 S Se r i e s Maximum Non R epetitive S urge Current R ated V R eapplied 100 1000 10000 01234567 T = 2 5 ° C J Ins tantaneous On-s tate Current (A) In st a n t a n e o u s O n -st a t e V o lt a g e ( V) T = 1 2 5 ° C J ST3 3 3 S Se r i e s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) thJCT rans ient T hermal Impedance Z (K/W) S teady S tate Value R = 0.10 K/ W (DC Operation) thJC S T 333S S eries

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Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A Fig. 9 - Reverse Recovered Charge Characteristics F ig. 10 - Reverse Recovery Current Characteristics Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 R ate Of Fall Of On-state Current - di/ dt (A/ µs) I = 500 A 300 A 200 A 100 A 50 A Maximum R evers e R ecovery Charge - Qrr (µC) S T 333S S eries T = 1 2 5 ° C J TM 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 R ate Of F all Of On-s tate Current - di/dt (A/µs ) I = 500 A 300 A 200 A 100 A 50 A Maximum R everse R ec overy Current - Irr (A) S T 333S S eries T = 125 °C J TM 1E 1 1E 2 1E 3 1E 4 1E 1 1E2 1E 3 1E4 50 Hz 400 2500 100 Pulse Ba se w id t h ( µs) Pea k On-s tate Current (A) 1000 1500 200 500 S nubb er circ uit R = 1 0 o h m s C = 0.47 µF V = 80% V s s D DRM 2000 ST3 3 3 S Se r i e s Si n u so i d a l p u l se T = 50°C C 1E4 tp 3000 5000 1E1 1E 2 1E3 1E 4 50 Hz 400 100 Pulse Ba se w id t h ( µs) 1000 1500 200 500 Sn u b b e r c i r c u i t R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM ST3 3 3 S Se r i e s S inusoidal pulse T = 75°C C tp 1E1 2000 2500 3000 1E 1 1E 2 1E 3 1E 4

1 E 11 E 21 E 31 E 4

Pu lse Ba se w id t h ( µ s) Peak On-s tate Current (A) 2500 400 1000 50 Hz 500 S nub b er circ uit R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM S T 333S S eries Tr apez oidal pul s e T = 50°C di/dt = 50A/µs C 1E4 2000 3000 1E1 1E2 1E3 1E4 50 Hz 400 100 1000 1500 200 Pulse Ba se w id t h ( µs) 500 Sn u b b e r c i r c u i t R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM ST3 3 3 S Se r i e s Trapez oidal puls e T = 75°C di/dt = 50A/µs C 2000 2500 3000 1E1

Document Number: 94377 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 7 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A Vishay High Power Products Fig. 13 - Frequency Characteristics Fig. 14 - Maximum On-State Energy Power Loss Characteristics Fig. 15 - Gate Characteristics 1E 1 1E 2 1E 3 1E 4 1E1 1E 2 1E3 1E 4 50 Hz 400 2500 100 1000 1500 200 Pulse Ba se w id t h ( µs) Peak On-s tate Current (A) 2000 Sn u b b e r c i r c u i t R = 1 0 o h m s C = 0.47 µF V = 80% V s s D DRM ST3 3 3 S Se r i e s Tr a p e zo i d a l p u l se T = 50 ° C di/dt = 1 00A/µs C tp 1E4 500 3000 1E1 1E2 1E 3 1E 4 50 Hz 400 100 1000 1500 200 Pulse Ba se w id t h ( µs) Sn u b b e r c i r c u i t R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM 2000 ST3 3 3 S Se r i e s T rapez oidal puls e T = 7 5 ° C di/dt = 100 A/µs C tp 500 1E1 2500 3000 1E 1 1E 2 1E 3 1E 4 1E 5 1E1 1E2 1E3 1E 4 Pulse Ba sew id t h ( µs) 20 joules p er pulse P eak On-s tate Current (A) 0.5 0.3 ST33 3 S Se r i e s S inus oidal puls e tp 1E4 0.2 1E 1 1E2 1E3 1E 4 Pulse Ba se w id t h (µs) 20 joules p er pulse 0.5 ST333 S Se ri e s R ectangular puls e di /dt = 5 0 A /µs tp 1E1 0.4 0.3 0.2 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 1 2 5 ° C Tj = - 40 ° C (1) (2) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) R ectangular gate puls e a) R ecommended load line for b) R ecommended load line for <=30% rated di/dt : 10V, 10ohms rated di/dt : 20V, 10ohms ; tr<=1 µs tr<=1 µs (1) P GM = 10W, tp = 20ms (2) P GM = 20W, tp = 10ms (3) PGM = 40W, tp = 5ms (4) PGM = 60W, tp = 3.3ms (3) Devic e: S T 333S Series (4) Fre q u e n c y Lim it e d b y PG ( A V )

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Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A ORDERING INFORMATION TABLE - Thyristor - Essential part number - 3 = Fast turn-off - S = Compression bonding stud - Voltage code x 100 = V RRM - P = Stud base 3/4" 16UNF-2A - Reapplied dV/dt code (for t q test condition) F = 200 V/µs -t q code (L = 15 µs) - 0 = Eyelet terminals 1 = Fast-on terminals - Lead (Pb)-free (see Voltage Ratings table) (gate and auxiliary cathode leads) (gate and auxiliary cathode leads) Note: For metric device M24 x 1.5 contact factory Device code 51 324 6789 1 0 ST 33 3 S 08 P F L 0 P LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95080

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.