ST333S

ST333S IRF | Alldatasheet

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DISCRETE POWER DIODES and THYRISTORS DATA BOOK

INVERTER GRADE THYRISTORS Stud Version 330A D-501 Bulletin I25171/B

Features

High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters IT(AV) 330 A @ T C 75 °C IT(RMS) 518 A ITSM @ 50Hz 11000 A @ 60Hz 11520 A I2t @ 50Hz 605 KA 2s @ 60Hz 550 KA 2s V DRM /VRRM 400 to 800 V tq range 10 to 30 µs TJ - 40 to 125 °C Parameters ST333S Units Major Ratings and Characteristics case style TO-209AE (TO-118)

Voltage V DRM /VRRM , maximum VRSM , maximum IDRM /IRRM max. Type number Code repetitive peak voltage non-repetitive peak voltage@ T J = TJ max. V V mA 04 400 500 08 800 900 ELECTRICAL SPECIFICATIONS Voltage Ratings Frequency Units 50Hz 840 600 1280 1040 5430 4350 400Hz 650 450 1280 910 2150 1560 1000Hz 430 230 1090 730 1080 720 A 2500Hz 140 60 490 250 400 190 Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current di/dt 50 50 - - - - A/µ s Case temperature 50 75 50 75 50 75 °C Equivalent values for RC circuit10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF ITM 180oel180oel 100µs ITM ITM Current Carrying Capability V IT(AV) Max. average on-state current 330 A 180° conduction, half sine wave @ Case temperature 75 °C IT(RMS) Max. RMS on-state current 518 DC @ 63°C case temperature ITSM Max. peak, one half cycle, 11000 t = 10ms No voltage non-repetitive surge current 11520 A t = 8.3ms reapplied 9250 t = 10ms 100% V RRM 9700 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 605 t = 10ms No voltage Initial TJ = TJ max 550 t = 8.3ms reapplied 430 t = 10ms 100% V RRM 390 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 6050 KA 2√s t = 0.1 to 10ms, no voltage reapplied Parameter ST333S Units Conditions On-state Conduction KA 2s ST333S 50

Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current

Fig. 13 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 11 - Frequency Characteristics

Fig. 15 - Gate Characteristics Fig. 14 - Maximum On-state Energy Power Loss Characteristics

V TM Max. peak on-state voltage 1.51 ITM = 1040A, TJ = TJ max, tp = 10ms sine wave pulse V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance rt2 High level value of forward slope resistance IH Maximum holding current 600 TJ = 25°C, IT > 30A IL Typical latching current 1000 TJ = 25°C, VA = 12V, Ra = 6Ω, IG = 1A Parameter ST333S Units Conditions On-state Conduction 0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.92 (I > π x IT(AV)), TJ = TJ max. V 0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.58 (I > π x IT(AV)), TJ = TJ max. m Ω mA di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM of turned-on current ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM , ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Switching Parameter ST333S Units Conditions

1000 A/µs

td Typical delay time 1.0 Min Max dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM , higher value off-state voltage available on request IRRM Max. peak reverse and off-state IDRM leakage current Parameter ST333S Units Conditions Blocking

500 V/µ s

50 mA TJ = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Triggering Parameter ST333S Units Conditions V TJ = TJ max, tp ≤ 5ms 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω TJ = TJ max, rated VDRM applied tq Max. turn-off time 10 30 µs W TJ = TJ max, f = 50Hz, d% = 50

TJ Max. junction operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case0.10 DC operation R thCS Ma x. thermal resistance, case to heatsink0.03 Mounting surface, smooth, flat and greased T Mounting torque, ± 10% 48.5 Nm (425) (Ibf-in) wt Approximate weight 535 g Case style TO-209AE (TO-118) See Outline Table Parameter ST333S Units Conditions Thermal and Mechanical Specifications K/W Non lubricated threads Ordering Information Table 5 6 8 9 ST 33 3 S 08 P F M 0 3 4 7 Device Code 21 10 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 K/W TJ = TJ max. 60° 0.025 0.026 30° 0.041 0.042 Conduction angle Sinusoidal conductionRectangular conductionUnits Conditions ΔR thJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M24 x 1.5 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) dv/dt - tq combinations available dv/dt (V/µs)20 50 100 200 400

10 CN DN EN -- --

12 CM DM EM FM * --

15 CL DL EL FL * HL

18 CP DP EP FP HP

20 CK DK EK FK HK

tq(µs) *Standard part number. All other types available only on request.

Case Style TO-209AE (TO-118) with top thread terminal 3/8" All dimensions in millimeters (inches) RED CATHODE RED SILICON RUBBER 10.5 (0.41) 24 5 (9 .6 5) ± 1 0 (0 .3 9) WHITE GATE 4.3 (0.17) DIA. CERAMIC HOUSING WHITE SHRINK NOM. 47 (1.85) M A X . 2 4 5 (9 .6 5) 38 (1.50) MAX. DIA. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX. 22 (0.87) MAX. M A X . 21 (0.82) M A X . SW 45 FLEXIBLE LEAD 4.5 (0.18) MAX. C.S. 50mm (0.078 s.i.) 25 5 (1 0.04 ) RED SHRINK 22 (0.86) MIN. 49 (1.92) MAX. 3/4"16 UNF-2A 2 7 .5 (1.08) 9.5 (0.37) MIN. Case Style TO-209AE (TO-118) All dimensions in millimeters (inches) 4 7 (1 .8 5) 2 7 .5 (1.0 8 ) 7 7 .5 (3 .0 5 ) DIA. MAX. M A X . M A X . M A X . CERAMIC HOUSING SW 45 * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. 2 1 (0 .8 3 ) 3/4"-16UNF-2A * 2 5 (0 .9 8 ) 3/8"-24UNF-2A 17 (0.67) DIA. AMP. 280000-1 REF-250