ST333CPBF VISHAY | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Document Number: 94376 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 1 Inverter Grade Thyristors (Hockey PUK Version), 720 A ST333CPbF Series Vishay High Power Products
FEATURES
- Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt International standard case TO-200AB (E-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level TYPICAL APPLICATIONS I n v e r t e r s Choppers Induction heating All types of force-commutated converters ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 720 A TO-200AB (E-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 720 A Ths 55 °C IT(RMS) 1435 A Ths 25 °C ITSM
50 Hz 11 000
A
60 Hz 11 500
50 Hz 605
60 Hz 553
tq Range 10 to 30 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST333C..C 04 400 500 08 800 900
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 94376
2 Revision: 30-Apr-08
Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A CURRENT CARRYING CAPABILITY FREQUENCY UNITS
50 Hz 1630 1420 2520 2260 7610 6820
A
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
V Voltage before turn-on VD VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 720 (350) A 55 (75) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink tem perature double side cooled 1435 AMaximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 11 000 t = 8.3 ms 11 500 t = 10 ms 100 % VRRM reapplied 9250 t = 8.3 ms 9700 Maximum I2t for fusing I 2t t = 10 mls No voltage reapplied 605 kA2s t = 8.3 ms 553 t = 10 ms 100 % VRRM reapplied 428 t = 8.3 ms 391 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA 2√s Maximum peak on-state voltage V TM ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 VLow level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.93 Low level value of forward slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58 mΩ High level value of forward slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current I H TJ = 25 °C, IT > 30 A 600 mA Typical latching current I L TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 180° el ITM 180° el ITM 100 µs ITM
Document Number: 94376 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 3 ST333CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt 1000 A/µs Typical delay time t d TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source 1.1 µs Maximum turn-off time minimum tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code maximum 30 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM TJ = TJ maximum, f = 50 Hz, d% = 50 W Maximum average gate power P G(AV) 10 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 10 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 5 Maximum DC gate currrent required to trigger I GT TJ = 25 °C, VA = 12 V, Ra = 6 Ω 200 mA Maximum DC gate voltage required to trigger V GT 3V Maximum DC gate current not to trigger I GD TJ = TJ maximum, rated VDRM applied 20 mA Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.09 K/W DC operation double side cooled 0.04 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.020 DC operation double side cooled 0.010 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 83 g Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 94376
4 Revision: 30-Apr-08
Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A Note The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 TJ = TJ maximum K/W 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.036 100 110 120 130 0 100 200 300 400 500 600 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) ST3 3 3 C . . C Se r i e s (S ingle S ide Cooled) R (DC) = 0.09 K/ W thJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 800 900 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maxi mum All owabl e H eats i nk T emperature (°C) ST3 3 3 C . . C Se r i e s (S ingle S ide Cooled) R (DC) = 0.09 K/ W thJ-hs 100 110 120 130 0 200 400 600 800 1000 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable Heats ink T emperature (°C) ST3 3 3 C . . C Se r i e s (Double S ide Cooled) R (DC) = 0.04 K/ W thJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 1400 1600 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maximum Allowable Heats ink T emperature (°C S T 333C..C S eries (Double S i de Cooled) R (DC) = 0.04 K/ W thJ-hs
Document Number: 94376 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 5 ST333CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average On-s tate P ower Loss (W) Average On-s tate Current (A) S T 333C..C S eries T = 1 2 5 ° C J 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 0 200 400 600 800 100012001400 1600 DC 180° 120° 90° 60° 30° RM S Lim i t Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) ST3 3 3 C . . C Se r i e s T = 1 2 5 ° C J 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) At Any R ated L oad Condition And With R ated V Applied F ollowing S urge. RRM P eak Half S ine Wave On-s tate Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 5 0 Hz 0 . 0 1 0 0 s J ST3 3 3 C . . C Se r i e s 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.01 0.1 1 P uls e T rain Duration (s ) Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Pea k Ha lf Sine Wave On-s tate Current (A) Initial T = 125°C No Voltage R eapplied Ra t e d V Re a p p l ie d RRM J ST3 3 3 C . . C Se r i e s 100 1000 10000 T = 2 5 ° C J I ns tantaneous On-s tate Curr ent (A) Ins tantaneous On-s tate Voltage (V) T = 125°C J ST3 3 3 C . . C Se ri e s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) thJ-hsTra n si e n t Th e rm a l Im p e d a n c e Z ( K/ W) ST3 3 3 C . . C Se r i e s S teady S tate Value R = 0.09 K/ W (S ingle S ide Cooled) R = 0.04 K/ W (Double S i de Cooled) (DC Operation) thJ-hs thJ -hs
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 94376
6 Revision: 30-Apr-08
Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Re covered Current Characteristics Fig. 13 - Frequency Characteristics Fig. 14 - Frequency Characteristics 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 I = 500 A 300 A 200 A 100 A 50 A R ate Of F all Of On-s tate Current - di/dt (A/µs ) Maximum R everse R ec overy Charge - Qrr (µC) TM ST3 3 3 C . . C Se r i e s T = 1 25 ° C J 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 Maximum R evers e R ecovery Current - Irr (A) R ate Of F all Of F orward Current - di/dt (A/µs ) I = 500 A 300 A 200 A 100 A 50 A TM ST3 3 3 C . . C Se r i e s T = 1 2 5 ° C J 1E 2 1E 3 1E 4 1E1 1 E2 1 E3 1E4 50 Hz 400 2500 100 Pu lse Ba se w id t h ( µs) Pe a k O n-st a te C urre n t (A) 1000 1500 3000 200 500 5000 ST3 3 3 C . . C Se r i e s Si n u so i d a l p u l se T = 4 0 ° C C S nubb er circ uit R = 1 0 o h m s C = 0.47 µF V = 80% V s s D DR M tp 1E 1 1E 2 1E 3 1E 4 50 Hz 400 2500 100 Pulse Ba se w id t h ( µs) 1000 1500 3000 200 500 5000 S T 333C..C S eries Si n u so i d a l p u l se T = 55°C C Snub b er c irc uit R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM tp 1E 2 1E 3 1E 4
1 E1 1 E2 1E3 1E4
Pulse Ba se w id t h (µs) P eak On-s tate Current (A) ST3 3 3 C . . C Se r i e s T rapez oidal puls e T = 40°C di/dt = 50A/µs 3000 Sn u b b e r c i r c u i t R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM C tp 5000 1E1 1E 2 1E3 1E4 50 Hz 400 100 P uls e B as ewidth (µs ) 1000 1500 2000 200 500 2500 Sn u b b e r c i r c u i t R = 10 o h m s C = 0.47 µF V = 80% V DR M s s D ST33 3 C . . C Se r i e s T r apez oidal puls e T = 5 5 ° C di/ dt = 100A/ µs C 3000 5000 tp
Document Number: 94376 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 7 ST333CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-State Energy Power Loss Characteristics Fig. 17 - Gate Characteristics 1E 2 1E 3 1E 4 1E 1 1E 2 1E 3 1E 4 50 Hz 400 2500 100 1000 1500 2000 3000 200 500 Pulse Ba se w id t h ( µ s) Peak On-s tate Current (A) ST33 3 C . . C Series T rap ezoida l p ulse T = 4 0 ° C di/ dt = 100A/ µs Sn u b b e r c i rc u i t R = 10 o h m s C = 0.47 µF V = 80% V s s D DR M C 5000 tp 1E 4 1E1 1E2 1E3 1E4 50 Hz 400 100 Pu lse Ba se w id t h ( µs) 1000 1500 2000 200 500 ST3 3 3 C . . C Se r i e s T r apez oidal puls e T = 5 5 ° C di/ d t = 100A/ µs C 2500 Sn u b b e r c i r c u i t R = 1 0 o h m s C = 0.47 µF V = 80% V s s D DR M tp 3000 5000 1E1 1E2 1E3 1E4 1E 1 1E 2 1E 3 1E 4 Pu lse Ba se w id t h ( µs) 20 joules per p ulse 0.5 0.3 0.2 Pe a k On -st a t e C urre n t ( A) ST3 3 3 C . . C Se r i e s Sinusoidal pulse tp
1 E 11 E 21 E 31 E 4
Pu lse Ba se w id t h ( µs) 20 joules p er pulse 0.5 0.3 0.2 ST3 3 3 C Se r i e s Re c t a n g u la r p u l se di /dt = 5 0 A/µ s 0.4 tp 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) T j=25 °C Tj = 1 2 5 ° C Tj = - 4 0 ° C (1) (2) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) R ectangular gate puls e a) R ecommended load l i ne for b) R ecommended l oad li ne for <=30% rated di/dt : 10V, 10ohms rated di/dt : 20V, 10ohms ; tr<=1 µs tr<=1 µs (1) PGM = 10W, tp = 20ms (2) PGM = 20W, tp = 10ms (3) PGM = 40W, tp = 5ms (4) PGM = 60W, tp = 3.3ms (3) Device: S T 333C..C S eries F requency L imited by P G(AV) (4)
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 94376
8 Revision: 30-Apr-08
Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A ORDERING INFORMATION TABLE 3 = Fast-on terminals - Thyristor - Essential part number - 3 = Fast turn-off - C = Ceramic PUK - Voltage code x 100 = V RRM - C = Puk case TO-200AB (E-PUK) - Reapplied dV/dt code (for t q test condition) -t q code - 0 = Eyelet terminals 1 = Fast-on terminals dV/dt - tq combinations available dV/dt (V/µs) 20 50 100 200 400 CN DN EN tq (µs) 2 = Eyelet terminals - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) - P = Lead (Pb)-free * Standard part number. All other types available only on request.
15 CL DL EL FL* HL
CM DM EM FM* CP DP EP FP HP18 CK DK EK FK HK --- H J25 FJ (see Voltage Ratings table) (gate and auxiliary cathode unsoldered leads) (gate and auxiliary cathode unsoldered leads) (gate and auxiliary cathode soldered leads) (gate and auxiliary cathode soldered leads) ---- H H Device code 51 324 6 7 8 9 10 11 ST 33 3 C 08 C H K 1 - P LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.