ST333C08CFL1 VISHAY | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Document Number: 93678 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 15-May-08 1 Inverter Grade Thyristors (Hockey PUK Version), 720 A ST333C..C Series Vishay High Power Products
FEATURES
- Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt International standard case TO-200AB (E-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free TYPICAL APPLICATIONS I n v e r t e r s Choppers Induction heating All types of force-commutated converters ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 720 A TO-200AB (E-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 720 A Ths 55 °C IT(RMS) 1435 A Ths 25 °C ITSM
50 Hz 11 000
A
60 Hz 11 500
50 Hz 605
60 Hz 553
tq Range 10 to 30 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST333C..C 04 400 500 08 800 900
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93678
2 Revision: 15-May-08
ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A CURRENT CARRYING CAPABILITY FREQUENCY UNITS
50 Hz 1630 1420 2520 2260 7610 6820
A
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
V Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave Double side (single side) cooled 720 (350) A 55 (75) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink te mperature double side cooled 1435 AMaximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 11 000 t = 8.3 ms 11 500 t = 10 ms 100 % V RRM reapplied 9250 t = 8.3 ms 9700 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 605 kA2s t = 8.3 ms 553 t = 10 ms 100 % VRRM reapplied 428 t = 8.3 ms 391 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA 2√s Maximum peak on-state voltage V TM ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 VLow level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.93 Low level value of forward slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58 mΩ High level value of forward slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current I H TJ = 25 °C, IT > 30 A 600 mA Typical latching current I L TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS MIN. MAX. Maximum non-repetitive rate of rise of turned on current dI/dt T J = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt 1000 A/µs Typical delay time t d TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source 1.1 µs Maximum turn-off time t q TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code 10 30 180° el ITM 180° el ITM 100 µs ITM
Document Number: 93678 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 15-May-08 3 ST333C..C Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products Note The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM TJ = TJ maximum, f = 50 Hz, d% = 50 W Maximum average gate power P G(AV) 10 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 10 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 5 Maximum DC gate currrent required to trigger I GT TJ = 25 °C, VA = 12 V, Ra = 6 Ω 200 mA Maximum DC gate voltage required to trigger V GT 3V Maximum DC gate current not to trigger I GD TJ = TJ maximum, rated VDRM applied 20 mA Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.09 K/W DC operation double side cooled 0.04 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.020 DC operation double side cooled 0.010 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 83 g Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 TJ = TJ maximum K/W 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93678
4 Revision: 15-May-08
ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics 100 110 120 130 0 100 200 300 400 500 600 30° 60° 90° 120° 180° Average On-state Cur rent (A) Conduct ion Angle Maximum Allowable Heatsink Temperature (°C) ST333C..C Series (Single Side Cooled) R (DC) = 0 .09 K/W thJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 800 900 DC 30° 60° 90° 120° 180° A ve rage On -state C urre nt (A ) Conduction Period Maximum Al lowable Heatsi nk Tem peratur e (°C) ST333C ..C Series (Single Side C ooled) R (D C) = 0.09 K/W thJ-hs 100 110 120 130 0 200 400 600 800 1000 30° 60° 90° 120° 180° Average O n-s tate Current (A) Conduc tion Angle Max i mum Al l o wabl e Hea ts i nk Temper atur e ( ° C) ST333 C..C Series (Double Side C ooled) R (D C ) = 0.04 K/W thJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 1400 1600 DC 30° 60° 90° 120° 180° Average On-state Current ( A) Conduc tion Perio d Maximum Allowable Heatsink Temperature (°C) ST333C..C Series (Double Side Cooled ) R (DC) = 0.04 K/W thJ-h s 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 180° 120° 90° 60° 30° RMS Limit Conduc tion Angl e Ma x i mu m Av e r a g e On - s t a t e P ower Lo s s ( W) Average O n-state Current (A) ST333 C ..C Serie s T = 125°C J 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 0 200 400 600 800 1000 1200 1400 1600 DC 180° 120° 90° 60° 30° RMS Li mit Conduc tion Peri od Maxi m um Average On-s tate Pow er Loss (W ) Average O n-state Current (A) ST333C.. C Seri es T = 125 °C J
Document Number: 93678 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 15-May-08 5 ST333C..C Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 001011 Number Of Equal Ampli tude Half Cycl e Current Puls es (N) At Any Rated Load Condition And With Rated V Applied Following Surge. RRM Peak Half Sine Wave On-state Current (A) In it ial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST333C..C Serie s 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.01 0.1 1 Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Peak Half Sine Wave On-state Current (A) Initial T = 125°C No Voltage Reapplied Rated V Reapplied RRM J ST333C..C Serie s 100 1000 10000 T = 25 °C J Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°C J ST333C..C Serie s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a re W a v e P u ls e D ur at io n (s) thJ-hsTransient Ther m al Im peda nce Z (K/W ) ST333C ..C Seri es St eady State Val ue R = 0.09 K /W (Sin gle Side C ooled) R = 0.04 K /W (Double Side C ooled) (DC Operation) th J -hs thJ-hs 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 I = 500 A 300 A 200 A 100 A 50 A Rate Of Fall Of On-state Current - di/dt (A/µs) Maximum Reverse Recovery Charge - Qrr (µC) TM ST333C..C Series T = 125 °C J 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 M axim um Reve rse Rec ove ry C urren t - Irr (A ) Rate Of Fall O f Forw ard C urren t - di/d t (A /µs) I = 5 00 A 300 A 200 A 100 A 50 A TM ST333C ..C Series T = 125 °C J
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93678
6 Revision: 15-May-08
ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A Fig. 13 - Frequency Characteristics Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 2500 100 Pul se Basewidt h (µs) Peak On- s tat e Current (A) 1000 1500 3000 200 500 5000 ST333C..C Series Sinusoidal pulse T = 40 °C C Snubber circuit R = 10 ohms C = 0. 4 7 µF V = 80% V s s D DRM tp 1E1 1E2 1E3 1E4 50 Hz 400 2500 100 Pulse Basew idth (µs) 1000 1500 3000 200 500 5000 ST333C..C Series Sinusoidal pulse T = 55 °C C Snubber circuit R = 10 ohms C = 0.47 µF V = 80% V s s D DRM tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 2500 100 1000 1500 2000 200 500 Pul se Basewi dth (µs) Peak On-s tate Current (A) S T333C..C Ser ies Trap ezoid al p ulse T = 40 °C di/dt = 50A/µs 3000 Snubber circuit R = 10 ohms C = 0.47 µF V = 80% V s s D DRM C t p 5000
1 E 11 E 21 E 31 E 4
Pul se Basewidt h (µs) 1000 1500 2000 200 500 2500 Snubber circuit R = 10 ohms C = 0 . 47 µF V = 80% V DRM s s D ST333C..C Series Trapezo idal p ulse T = 55°C di/dt = 100A/µs C 3000 5000 t p 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 2500 100 1000 1500 2000 3000 200 500 Pulse Basew idth (µs) Peak On-state Curre nt (A ) ST333C..C Series Trapezoidal pulse T = 40 °C d i/dt = 100A/µs Snubber circuit R = 10 ohms C = 0. 4 7 µF V = 80% V s s D DRM C 5000 t p 1E1 1E2 1E3 1E4 50 Hz 400 100 Pul se Basew i dt h (µs ) 1000 1500 2000 200 500 ST333C..C Series Trapezo id al p ulse T = 55°C di/dt = 100A/µs C 2500 Snubber circuit R = 10 ohms C = 0 . 47 µF V = 80% V s s D DR M t p 3000 5000
Document Number: 93678 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 15-May-08 7 ST333C..C Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products Fig. 16 - Maximum On-State Energy Power Loss Characteristics Fig. 17 - Gate Characteristics 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Puls e Basewi dth (µs) 20 joules per p ulse 0.5 0.3 0.2 Peak On-st ate Current (A) ST333C ..C Series Sinusoidal pulse tp 1E4 1E1 1E2 1E3 1E4 Pul se Basew i dth (µs) 20 joul es per puls e 0.5 0.3 0.2 ST3 33 C Se ries Rec tangula r pulse di/dt = 50A/µs 0.4 t p 0.1 100 0.001 0.01 0.1 1 10 100 VGD IG D (b) (a) Tj=25 °C Tj=125 °C Tj=-40 °C (1) (2) Instantane ous G ate C urrent (A ) Instantan eous G ate Vo ltage (V) R ectangu lar gate pul se a ) R e c o m m e n d e d lo a d lin e fo r b ) Re c o m m e n d e d lo a d lin e f o r <=30% rat ed di/ dt : 10V, 10ohms r ated di/dt : 20V , 10ohms; tr<=1 µs tr<=1 µs (1) PGM = 10W, tp = 20ms (2) PGM = 20W, tp = 10ms (3) PGM = 40W, tp = 5m s (4) PGM = 60W, tp = 3.3ms (3 ) Device: ST333C ..C Seri es Frequen cy Limited by PG(AV ) (4)
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93678
8 Revision: 15-May-08
ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A ORDERING INFORMATION TABLE 3 = Fast-on term. (gate and aux. cathode soldered leads) - Thyristor - Essential part number - 3 = Fast turn off - C = Ceramic PUK - Voltage code x 100 = V RRM (see Voltage Ratings table) - C = PUK case TO-200AB (E-PUK) - Reapplied dV/dt code (for t q test condition) -t q code - 0 = Eyelet term. (gate and aux. cathode unsoldered leads) 1 = Fast-on term. (gate and aux. cathode unsoldered leads) 2 = Eyelet term. (gate and aux. cathode soldered leads) - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) * Standard part number. All other types available only on request. tq (µs) dV/dt - tq combinations available dV/dt (V/µs) 20 50 100 200 400
10 CN DN EN -- --
12 CM DM EM FM* --
15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075
Document Number: 95075 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 01-Aug-07 1 TO-200AB (E-PUK) Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) MIN. 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 14.1/15.1 (0.56/0.59) 25° ± 5° 25.3 (0.99) 42 (1.65) MAX. Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Gate terminal for 1.47 (0.06) DIA. pin receptacle 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
www.vishay.com Vishay Revision: 02-Oct-12 1 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vish ay’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vi shay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.